TSHF6410 Datasheet

TSHF6410
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):  5
• Peak wavelength: p = 890 nm
•
•
•
•
High reliability
High radiant power
High radiant intensity
Angle of half intensity:  = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
94 8389
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
P (nm)
tr (ns)
70
± 22
890
30
TSHF6410
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHF6410
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
VR
5
V
Forward current
IF
100
mA
mA
PARAMETER
TEST CONDITION
UNIT
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1.5
A
PV
160
mW
Power dissipation
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 1.3, 23-Aug-11
100
°C
- 40 to + 85
°C
°C
Tstg
- 40 to + 100
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W
Storage temperature range
Soldering temperature
Tj
Tamb
Document Number: 81832
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF6410
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21211
20 30
40
50
60
70 80
90
100
0
21212
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.4
1.6
IF = 1 A, tp = 100 μs
VF
2.3
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
Reverse current
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
PARAMETER
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of e
MIN.
70
V
V
mV/K
10
μA
135
mW/sr
125
45
UNIT
pF
IF = 1 A, tp = 100 μs
Ie
700
IF = 100 mA, tp = 20 ms
e
50
mW
IF = 100 mA
TKe
- 0.35
%/K

± 22
deg
nm
Angle of half intensity
mW/sr
Peak wavelength
IF = 100 mA
p
890
Spectral bandwidth
IF = 100 mA

40
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA
tr
30
ns
Fall time
IF = 100 mA
tf
30
ns
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
d
2.1
mm
Cut-off frequency
Virtual source diameter
Rev. 1.3, 23-Aug-11
Document Number: 81832
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF6410
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Radiant Power (mW)
0.02
IF - Forward Current (mA)
1000
Tamb < 50 °C
tp/T = 0.01
1000
0.05
0.1
10
0.5
100
0.01
0.1
0.1
1
10
10
100
Fig. 5 - Radiant Power vs. Forward Current
1.25
Φe rel - Relative Radiant Power
1000
100
tp = 100 µs
tp/T = 0.001
10
1.0
0.75
0.5
0.25
0
800
1
18873
1
3
2
VF - Forward Voltage (V)
4
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
Ie rel - Relative Radiant Intensity
100
10
1
0.1
1
10
100
IF - Forward Current (mA)
1000
Fig. 4 - Radiant Intensity vs. Forward Current
Rev. 1.3, 23-Aug-11
10°
20°
30°
1000
18220
1000
900
λ - Wavelength (nm)
20082
40°
1.0
0.9
50°
0.8
60°
70°
0.7
94 8883
ϕ - Angular Displacement
0
Ie - Radiant Intensity (mW/sr)
1000
IF - Forward Current (mA)
16971
tp - Pulse Duration (ms)
16031
1
100
Fig. 2 - Pulse Forward Current vs. Pulse Duration
IF - Forward Current (mA)
1
e-
0.2
100
80°
0.6
0.4
0.2
0
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81832
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF6410
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Ø 5.8 ± 0.15
C
R 2.49 (sphere)
(3.5)
34.3 ± 0.55
< 0.7
8.7 ± 0.3
7.7 ± 0.15
A
Area not plane
+ 0.2
0.6 - 0.1
1 min.
Ø 5 ± 0.15
0.15
0.5 +- 0.05
0.15
0.5 +- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5259.06-4
Issue: 6; 19.05.09
19257
Rev. 1.3, 23-Aug-11
Document Number: 81832
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000