VSMD66694 Datasheet

VSMD66694
www.vishay.com
Vishay Semiconductors
Dual Color Emitting Diodes, 660 nm and 940 nm
FEATURES
• Package type: surface mount
• Package form: square PCB
• Dimensions (L x W x H in mm): 2 x 2 x 0.87
• Peak wavelength: λp = 660 nm and 940 nm
• High reliability
• High radiant power
• Angle of half intensity: ϕ = ± 60°
• Floor life: 168 h, MSL 3, according to
J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
APPLICATIONS
VSMD66694 is a dual color emitting device with 660 nm and
940 nm peak wavelength. The emitters are based on the
SurfLightTM technology, providing high radiant power.
• Wearables
• Health monitoring
• Pulse oximetry
PRODUCT SUMMARY
COMPONENT
VSMD66694
COLOR
Ie (mW/sr)
Red
2.3
IR
1.5
ϕ (deg)
λp (nm)
tr (ns)
660
± 60
10
940
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMD66694
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
square PCB
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
SYMBOL
Forward current
IF
Peak forward current
tp/T = 0.1, tp = 100 μs
IFM
Surge forward current
tp = 100 μs
IFSM
Power dissipation
PV
Junction temperature
Operating temperature range
Thermal resistance junction / ambient
Rev. 1.0, 12-Apr-16
VALUE
UNIT
5
V
Red
70
IR
70
Red
140
IR
140
Red
1
IR
1
Red
161
IR
119
mA
mA
A
mW
Tj
100
°C
Tamb
-25 to +85
°C
°C
Tstg
-25 to +85
According fig. 10, J-STD-020
Tsd
260
°C
J-STD-051
RthJA
390
K/W
Storage temperature range
Soldering temperature
COLOR
VR
Document Number: 84324
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VSMD66694
www.vishay.com
Vishay Semiconductors
80
180
RthJA = 390 K/W
160
140
120
IR
100
80
60
40
20
RthJA = 390 K/W
70
IF - Forward Current (mA)
PV - Power Dissipation (mW)
red
IR
60
50
red
40
30
20
10
0
0
0
20
40
60
80
0
100
20
Tamb - Ambient Temperature (°C)
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
SYMBOL
IF = 20 mA, tp = 20 ms
VF
IF = 20 mA
TKVF
Temperature coefficient
Reverse current
MIN.
TYP.
MAX.
Red
-
2.0
2.3
IR
-
1.4
1.7
Red
-
-2.3
-
IR
-
-2.3
-
not designed for reverse operation
IR
VR = 0 V, f = 1 MHz,
E = 0 mW/cm2
CJ
Radiant intensity
IF = 20 mA
Ie
Radiant power
IF = 20 mA
φe
Angle of half intensity
IF = 20 mA
ϕ
Junction capacitance
COLOR
Peak wavelength
IF = 20 mA
λp
Spectral bandwidth
IF = 20 mA
Δλ
Temperature coefficient of λp
IF = 20 mA
TKλp
Rise time
IF = 20 mA
tr
Fall time
IF = 20 mA
tf
UNIT
V
mV/K
μA
Red
-
7
-
IR
-
5
-
Red
1.9
2.3
-
IR
0.8
1.5
-
Red
-
9.5
-
IR
-
8.5
-
-
± 60
-
Red
650
660
670
IR
920
940
960
Red
-
20
-
IR
-
40
-
Red
-
0.2
-
IR
-
0.3
-
Red
-
10
-
IR
-
10
-
Red
-
10
-
IR
-
10
-
pF
mW/sr
mW
deg
nm
nm
nm/K
ns
ns
CIRCUIT BLOCK DIAGRAM
1
4
IR
2
Rev. 1.0, 12-Apr-16
RED
3
1
IR LED
IR cathode
2
RED LED
RED anode
3
RED LED
RED cathode
4
IR LED
IR anode
Document Number: 84324
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMD66694
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
IR
tp = 10 ms
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 10 ms
red
100
10
IR
10
red
1
1
0.1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1
10
VF - Forward Voltage (V)
2.00
1.80
1.60
IR
1.40
1.20
-60 -40 -20
0
20
40
60
80
Fig. 6 - Radiant Intensity vs. Forward Current
Ie, rel - Relative Radiant Intensity (%)
VF - Forward Voltage (V)
IF = 20 mA
tP = 20 ms
red
120
115
110
IR
105
100
95
90
100
-60 -40 -20
IF = 20 mA
tp = 20 ms
red
100
95
90
-60 -40 -20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.0, 12-Apr-16
20
40
60
80
100
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity (%)
VF, rel - Relative Forward Voltage (%)
115
105
0
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
110
IF = 20 mA
tp = 20 ms
red
Tamb - Ambient Temperature (°C)
IR
1000
IF - Forward Current (mA)
Fig. 3 - Forward Current vs. Forward Voltage
2.20
100
100
90
IF = 20 mA
80
70
60
50
40
30
20
10
0
550
650
750
850
950
1050
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Document Number: 84324
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMD66694
www.vishay.com
Vishay Semiconductors
DRYPACK
0°
10°
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie, rel - Relative Radiant Intensity
30°
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
80°
0.6
0.4
0.2
DRYING
0
948013-1
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
REFLOW SOLDER PROFILE
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.0, 12-Apr-16
Document Number: 84324
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMD66694
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
(0.6)
0.87
2
1
Top View Pinning
1
cathode
2
anode
0.5
2
1
4
anode
3
cathode
2
Technical drawings
according to DIN
specification
Recommended Footprint
0.05 (4 x)
Pin 1 marking
0.5 (4 x)
1.5
1 (2 x)
0.63 (4 x)
0.55 (4 x)
2.3
0.5 (4 x)
Drawing No.: 6.550-5347.01-4
Issue: 1; 19.02.16
Rev. 1.0, 12-Apr-16
Not indicated tolerances ± 0.1
Document Number: 84324
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMD66694
www.vishay.com
Vishay Semiconductors
TAPE DIMENSIONS in millimeters
(4)
Pin 1
(3.5)
(Ø 1)
(8)
Y
(1.75)
(Ø 1.5)
Y
(2.3)
Reel off direction
(2)
(4)
(0.25)
Y-Y
(2.3)
Technical drawings
according to DIN
specifications
Drawing-No.: 9.700-5397.02-4
Issue: 1; 19.02.16
Rev. 1.0, 12-Apr-16
(1.25)
Document Number: 84324
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMD66694
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS in millimeters
8.4
Ø 177.8 max.
+ 0.15
Ø 55 min.
8.4
+ 2.5
Z
Form of the leave open of the wheel is supplier specific.
14.4 max.
Drawing-No.: 9.800-5096.01-4
Issue: 4; 08.03.2016
Rev. 1.0, 12-Apr-16
Ø 20.2 min.
Ø 13
+ 0.5
- 0.2
1.5 min.
Z 2:1
technical drawings
according to DIN
specifications
Document Number: 84324
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000