SiP32454, SiP32455 Vishay Siliconix 0.8 V to 2.5 V, 28 mΩ, Slew Rate Controlled Load Switch in WCSP4 DESCRIPTION FEATURES The SiP32454 and SiP32455 are slew rate controlled integrated high side load switches that operate in the input voltage range from 0.8 V to 2.5 V. The SiP32454 and SiP32455 are of N-channel MOSFET switching elements that provide 28 mΩ switch on resistance. They have a 1 ms at 1.2 V and 1.5 ms at 2.5 V slow slew rate that limits the in-rush current and minimizes the switching noise. These devices’ low voltage logic control threshold can interface with low voltage control I/O directly without extra level shift or driver. A 2 MΩ pull-down resistor is integrated at logic control EN pin. SiP32454 integrates a switch OFF output discharge circuit. Both SiP32454 and SiP32455 are available in compact wafer level CSP package, WCSP4 0.8 mm x 0.8 mm with 0.4 mm pitch. • • • • • • • • Low input voltage, 0.8 V to 2.5 V Low RON, 28 mΩ typical Slew rate control Low logic control with hysteresis Reverse current blocking when disabled Integrated output discharge switch for SiP32454 Integrated pull down resistor at EN pin 4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch package • Material categorization: For definitions of compliance please see www.vishay.com/doc?9991 APPLICATIONS • • • • • • • • Battery operated devices Smart phones GPS and PMP Computer Medical and healthcare equipment Industrial and instrument Cellular phones and portable media players Game console TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32454, SiP32455 CIN COUT EN EN GND GND GND Figure 1 - SiP32454 and SiP32455 Typical Application Circuit Document Number: 62531 S12-0967-Rev. A, 07-May-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix ORDERING INFORMATION Temperature Range - 40 °C to 85 °C Package Marking Part Number WCSP: 4 Bumps (2 x 2, 0.4 mm pitch, 208 µm bump height, 0.8 mm x 0.8 mm die size) AD SiP32454DB-T2-GE1 AE SiP32455DB-T2-GE1 Note: GE1 denotes halogen-free and RoHS compliant ABSOLUTE MAXIMUM RATINGS Parameter Limit Supply Input Voltage (VIN) - 0.3 to 2.75 Enable Input Voltage (VEN) - 0.3 to 2.75 Output Voltage (VOUT) - 0.3 to 2.75 Maximum Continuous Switch Current (Imax.) Unit V 1.2 Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle) A 2 ESD Rating (HBM) 4000 V Junction Temperature (TJ) - 40 to 150 °C Thermal Resistance (θJA)a 280 °C/W 196 mW Power Dissipation (PD )a Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 3.6 mW/°C above TA = 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Limit Input Voltage Range (VIN) Operating Junction Temperature Range www.vishay.com 2 Unit 0.8 to 2.5 V - 40 to 125 °C For technical questions, contact: [email protected] Document Number: 62531 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VIN = 1 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits Unit Min.a Typ.b Max.a 0.8 - 2.5 VIN = 1.2 V, VEN = VIN, OUT = open - 10 15 VIN = 2.5 V, VEN = VIN, OUT = open - 34 60 - - 30 - - 1 Operating Voltagec VIN Quiescent Current IQ Off Supply Current IQ(off) Off Switch Current IDS(off) EN = GND, OUT = 0 V - - 30 IRB VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V - 0.001 30 VIN = 1 V, IL = 200 mA, TA = 25 °C - 30 35 VIN = 1.2 V, IL = 200 mA, TA = 25 °C - 29 35 VIN = 1.8 V, IL = 200 mA, TA = 25 °C - 28 35 VIN = 2.5 V, IL = 200 mA, TA = 25 °C - 28 35 - 4100 - ppm/°C - 417 550 Ω Reverse Blocking Current RDS(on) On-Resistance On-Resistance Temp.-Coefficient Output Pulldown Resistance SiP32455 EN = GND, OUT = open TCRDS RPD VEN = 0 V, TA = 25 °C (SiP32454 only) c VIL VIN = 1 V - - 0.1 Voltagec VIH VIN = 2.5 V 1.5 - - EN Input Low Voltage EN Input High SiP32454 EN Input Leakage Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time IEN td(on) tr td(off) VIN = 2.5 V, VEN = 0 V - - 1 VIN = 2.5 V, VEN = 2.5 V - 6.5 12 - 0.6 1.2 - 0.6 1.2 0.4 1 1.6 VIN = 1.2 V VIN = 2.5 V VIN = 1.2 V VIN = 2.5 V RLOAD = 10 Ω, CL = 0.1 µF, TA = 25 °C 0.5 1.5 2.5 VIN = 1.2 V - 0.3 1 VIN = 2.5 V - 0.1 1 V µA mΩ V µA ms µs Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. Document Number: 62531 S12-0967-Rev. A, 07-May-12 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix PIN CONFIGURATION Index-Bump A1 1 OUT A A B GND 2 IN 2 IN 1 OUT W A D B EN EN Backside GND Bumpside Figure 2 - WCSP 2 x 2 Package PIN DESCRIPTION Pin Number Name Function A1 OUT This is the output pin of the switch A2 IN This is the input pin of the switch B1 GND Ground connection B2 EN Enable input BLOCK DIAGRAM IN EN OUT Control Logic Charge Pump Turn ON Slew Rate Control GND For SiP32454 only Figure 3 - Functional Block Diagram www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 62531 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix 45 45 40 40 35 35 IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 25 20 15 10 5 VIN = 2.5 V 30 25 20 15 VIN = 1.2 V 10 5 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 - 40 2.8 VIN = 1 V - 20 0 VIN (V) Quiescent vs. Input Voltage 100 80 100 100 000 SiP32454 SiP32454 1200 VIN = 2.5 V 10 000 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 80 Quiescent vs. Temperature 1400 1000 800 600 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 VIN = 1.2 V 1000 100 VIN = 1 V 10 400 1 - 40 2.8 Off Supply Current vs. Input Voltage - 20 0 20 40 60 Temperature (°C) Off Supply Current vs. Temperature 12 1000 SiP32455 SiP32455 10 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 20 40 60 Temperature (°C) 8 6 4 2 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 Off Supply Current vs. Input Voltage Document Number: 62531 S12-0967-Rev. A, 07-May-12 2.8 100 VIN = 2.5 V VIN = 1.2 V 10 1 VIN = 1 V 0.1 0.01 0.001 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Off Supply Current vs. Temperature For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1600 100 000 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 1400 VIN = 5 V 10 000 1200 1000 800 600 VIN = 3.6 V 1000 100 VIN = 1.2 V 10 400 200 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 1 - 40 2.8 Off Switch Current vs. Input Voltage - 20 0 20 40 60 Temperature (°C) 80 100 Off Switch Current vs. Temperature 36 35 34 IO = 0.2 A VIN = 1.2 V 34 32 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) 33 IO = 1.2 A 31 30 29 IO = 0.5 A 28 32 30 28 26 24 27 IO = 0.2 A 26 22 25 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 20 - 40 2.8 On Resistance vs. Input Voltage 0 20 40 60 Temperature (°C) 80 100 On Resistance vs. Temperature 160 4.0 3.8 VOUT = 2.5 V VIN = 0.9 V 140 VIN = 0.9 V IIN - Input Current (nA) 3.6 IIN - Input Current (nA) - 20 3.4 3.2 3.0 2.8 120 100 80 60 2.6 40 2.4 20 2.2 2.0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VOUT (V) 2.2 2.4 2.6 2.8 Reverse Blocking Current vs. Output Voltage www.vishay.com 6 0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Reverse Blocking Current vs. Temperature For technical questions, contact: [email protected] Document Number: 62531 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 450 SiP32454 only VOUT = VIN 450 RPD - Output Pulldown Resistance (Ω) RPD - Output Pulldown Resistance (Ω) 460 440 430 420 410 400 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 SiP32454 only VOUT = VIN = 2.5 V 440 430 420 410 400 390 - 40 2.8 1.6 7 1.4 6 1.2 1 VIH 0.8 VIL 0.6 0.4 20 40 60 Temperature (°C) 80 100 VIN = 2.5 V 5 4 3 2 1 0.2 0 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VIN (V) 2.2 2.4 2.6 0.0 2.8 0.5 0.8 2.0 2.5 2.50 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 2.25 2.00 tr - Rise Time (ms) 0.7 0.6 0.5 0.4 1.50 1.25 1.00 0.75 0.2 0.50 0.1 0.25 - 20 0 20 40 Temperature (°C) 60 80 Turn-On Delay Time vs. Temperature Document Number: 62531 S12-0967-Rev. A, 07-May-12 100 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 1.75 0.3 0 - 40 1.5 EN Input Leakage vs.VEN 1 0.9 1.0 VEN (V) EN Threshold Voltage vs. Input Voltage td(on) - Turn-On Delay Time (ms) 0 Output Pulldown Resistance vs. Temperature IEN, EN Current (μA) EN Threshold Voltage (V) Output Pulldown Resistance vs. Input Voltage - 20 0.00 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Rise Time vs. Temperature For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix ELECTRICAL CHARACTERISTICS 0.30 td(off) - Turn-Off Delay Time (μs) 0.25 VIN = 2.5 V CL = 0.1 μF RL = 10 Ω 0.20 0.15 0.10 0.05 0.00 - 40 - 20 0 20 40 60 Temperature (°C) 80 100 Turn-Off Delay Time vs. Temperature TYPICAL WAVEFORMS www.vishay.com 8 Turn-On Time (VIN = 1.2 V) Turn-Off Time (VIN = 1.2 V) Turn-On Time (VIN = 2.5 V) Turn-Off Time (VIN = 2.5 V) For technical questions, contact: [email protected] Document Number: 62531 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix DETAILED DESCRIPTION SiP32454 and SiP32455 are n-channel power MOSFET designed as high side load switch. Once enable the device charge pumps the gate of the power MOSFET to a constant gate to source voltage for fast turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. SiP32454 and SiP32455 are designed with slow slew rate to minimize the inrush current during turn on. Because the body of the output n-channel is always connected to GND, it prevents the current from going back to the input in case the output voltage is higher than the output. The SiP32454 especially incorporates an active output pulldown resistor to discharge output capacitance when the device is off. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 4.7 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There are no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.1 V or below to fully shut down the device and 1.5 V or above to fully turn on the device. P (max.) = T J (max.) - T A θJ- A = 125 - TA 280 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 196 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C is 35 mΩ. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 4100 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 35 mΩ x (1 + 0.0041 x (70 °C - 25 °C)) = 42.2 mΩ The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in this case is 2.1 A. Under the stated input voltage condition, if the 2.1 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 1.2 A only as listed in the Absolute Maximum Ratings table. Protection Against Reverse Voltage Condition Both the SiP32454 and SiP32455 can block the output current from going to the input in case where the output voltage is higher than the input voltage when the main switch is off. Thermal Considerations These devices are designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 280 °C/W) the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, θJ-A = 280 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: Document Number: 62531 S12-0967-Rev. A, 07-May-12 For technical questions, contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32454, SiP32455 Vishay Siliconix PACKAGE OUTLINE WCSP: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height, 0.8 mm x 0.8 mm Die Size) Mark on backside of die 1 A 0.4 1 2 W A 4xØb B A e 4 x Ø 0.150 to 0.200 Solder mask dia. - Pad diameter + 0.1 2 D Index-Bump A1 D B 0.4 e D Note 3 A1 A Recommended Land Pattern All dimensions in millimeters Dimension A MILLIMETERS Nom. MAX. Min. Nom. MAX. 0.515 0.530 0.545 0.0202 0.0208 0.0214 0.270 0.0098 0.208 0.250 0.260 e D INCHES Min. A1 b Bump Note 2 0.0081 0.400 0.720 0.760 0.0102 0.0106 0.0157 0.800 0.0182 0.0193 0.0203 Notes: 1. Laser mark on the backside surface of die. 2. Bumps are SAC396. 3. 0.050 max. coplanarity. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62531 www.vishay.com 10 For technical questions, contact: [email protected] Document Number: 62531 S12-0967-Rev. A, 07-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size) Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb D Pin 1 mark A 0.4 Note 3 A1 Recommended Land Pattern All dimensions in millimeters Bump Note 2 DWG-No: 6004 Notes (1) Laser mark on the backside surface of die (2) Bumps are SAC396 (3) 0.05 max. coplanarity DIM. A MILLIMETERS a NOM. MAX. MIN. 0.515 0.530 0.545 0.0202 A1 b 0.208 0.250 e D INCHES MIN. 0.260 0.760 MAX. 0.0208 0.0214 0.0081 0.270 0.0098 0.800 0.0182 0.400 0.720 NOM. 0.0102 0.0106 0.0157 0.0193 0.0203 Note a. Use millimeters as the primary measurement. S14-0844-Rev. C, 28-Apr-14 1 Document Number: 63459 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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