New Product SiP2100 Vishay Siliconix 5 V, 1 A H-Bridge Motor Driver DESCRIPTION FEATURES The SIP2100 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to 1 A continuous current at 5 V VDD supply. The SIP2100 has two independent logic inputs that can set four different motor operation modes: normal rotation, reverse rotation, stop (idling) and braking. The internal shoot-through protection logic also prevents upper and lower outputs from being turned on simultaneously. The SiP2100 offers high efficiency with an extremely low operating current. The device also benefits from over temperature protection with a shut down hysteresis of 20 °C. The SIP2100 is available in SOIC8 package. • • • • • • 1 A drive capability Optimized for 5 V VDD bias Extremely low idle current Shoot-through protection scheme Thermal shutdown Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High performance servo • Optical/tape disk drives • Brush/stepper motor driver PACKAGE OUTLINE SOIC (Top View) SA 1 8 OUTA GND 2 7 INA VDD 3 6 INB SB 4 5 OUTB Fig. 1 - Package and Pinout FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE Fig. 2 - Functional Block Diagram TRUTH TABLE INA INB OUTA OutB 1 0 0 1 0 1 0 1 1 0 0 HiZ 0 1 0 HiZ Document Number: 63949 S12-2801-Rev. B, 10-Dec-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiP2100 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Electrical Parameter Conditions Limits VDD Reference to GND - 0.3 to 6 OUTA, OUTB Reference to GND - 0.3 to 6 SA, SB Reference to GND - 0.3 to 1 INA, INB Reference to GND - 0.3 to VDD Unit V Temperature Operating Temperature - 40 to 85 Max. Operating Junction Temperature °C 150 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter VDD Min. Typ. Max. Unit 3.8 5 5.5 V Temperature Operating Junction Temperature 0 125 Recommended Ambient Temperature 0 70 °C THERMAL RESISTANCE RATINGS Parameter Max. Thermal Resistance (Junction to Ambient) Power Dissipation 153 SO-8 PowerPAD, RthJC 40 SO-8, TA = 70 °C 522 mW SO-8 PowerPAD, TA = 70 °C 2 W Junction Temperature - 65 to 150 Storage Temperature - 55 to 150 www.vishay.com 2 Unit SO-8, RthJA For technical questions, contact: [email protected] °C/W °C Document Number: 63949 S12-2801-Rev. B, 10-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiP2100 Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise specified) Parameter Symbol Test Conditions VDD = 5 V Limits Min.a Typ.b Max.a Unit Driver Power Supply VDD Bias Supply Current IDD IN = 100 kHz 250 300 IN = 20 kHz 150 180 Quiescent state 50 VDD Rising Threshold VDD TH_R VDD rising VDD Falling Threshold VDD TH_F VDD falling VDD UVLO Hysteresis VDD UVLO 2.8 2 3 2.5 300 µA V mV Input Logic Input Voltage High VINH Input Voltage Low VINL 0.7 Input Sourcing Current IINH 1 Input Sinking Current IINL 2 V µA -1 Output Stage VOUTH Output Voltage High IOUT = - 500 mA IOUT = - 1000 mA IOUT = + 500 mA 4.4 VDD = 4.75 V 4.25 0.25 Output Voltage Low VOUTL Output High Propagation Delay TPLH 20 25 Output Low Propagation Delay TPHL 20 25 IOUT = + 1000 mA V 0.5 nS Thermal Protection Thermal Shutdown Threshold 150 Thermal Shutdown Hysteresis 20 °C Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. PIN DESCRIPTION (SOIC PACKAGE) Pin Number Name Function 1 SA Driver output return A 2 GND Analog ground of internal logic 3 VDD Input of internal logic bias and power stage 4 SB Driver output return B 5 OUTB Driver output B 6 INB Driver input B 7 INA Driver input A 8 OUTA Driver output A Document Number: 63949 S12-2801-Rev. B, 10-Dec-12 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiP2100 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 300 VDD = 5.5 V,100 kHz 250 VIN = 5.5 V IDD - Supply Current (µA) VOUT - Output Voltage (V) 5 4.5 4 3.5 200 150 VDD = 5.5 V, 20 kHz 100 VDD = 5.5 V,10 kHz 50 VIN = 3.8 V 3 - 60 VDD = 3.8 V,100 kHz - 40 - 20 0 20 40 60 VDD = 3.8 V,10 kHz 80 0 - 60 100 - 40 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Fig 1. Output Voltage vs. Temperature (at 1.5 A Load) Fig 2. Supply Current IDD vs. Temperature 19 50 18 45 TPLH, VDD = 3.8 V 17 VDD = 5.5 V 16 Delay Time (ns) Current (µA) - 20 VDD = 3.8 V, 20 kHz 40 35 TPLH, VDD = 5.5 V 15 14 13 TPHL, VDD = 3.8 V 12 11 30 VDD = 3.8 V 25 - 60 - 40 - 20 0 20 40 60 TPHL, VDD = 5.5 V 10 80 9 - 60 100 - 40 - 20 Temperature (°C) 0 20 Fig 3. Quiescent Current vs. Temperature 60 80 100 Fig 4. Propagation Delay vs. Temperature 1.8 0.35 1.7 VDD = 5.5 V 0.3 1.6 VIN = 5.5 V VIH (V) 0.25 ROUT (Ω) 40 Temperature (°C) VIN = 3.8 V 0.2 VDD = 5 V 1.5 1.4 1.3 VDD = 3.8 V 0.15 1.2 0.1 - 60 - 40 www.vishay.com 4 - 20 0 20 40 60 80 100 1.1 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Fig 5. ROUT vs. Temperature Fig 6. PWM Rising Threshold vs. Temperature For technical questions, contact: [email protected] Document Number: 63949 S12-2801-Rev. B, 10-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiP2100 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.1 1.05 1 VDD = 5.5 V VIL (V) 0.95 VDD = 5 V 0.9 0.85 VDD = 3.8 V 0.8 0.75 0.7 - 60 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Fig 7. PWM Falling Threshold vs. Temperature Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63949. Document Number: 63949 S12-2801-Rev. B, 10-Dec-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000