datasheet

SEMiX302GB176HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1700
V
Tc = 25 °C
308
A
Tc = 80 °C
219
A
200
A
ICnom
ICRM
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB176HDs
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
400
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25 °C
389
A
Tc = 80 °C
262
A
200
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2000
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 200 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 8 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 1200 V
IC = 200 A
VGE = ±15 V
RG on = 6.5 
RG off = 6.5 
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
min.
typ.
max.
Unit
Tj = 25 °C
2
2.45
V
Tj = 125 °C
2.5
2.9
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
5.0
6.3
m
7.8
9.0
m
5.8
6.4
V
3
mA
Tj = 125 °C
5.2
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
17.6
nF
f = 1 MHz
0.73
nF
f = 1 MHz
Tj = 125 °C
0.58
nF
1866
nC
3.75

225
ns
Tj = 125 °C
45
ns
Tj = 125 °C
130
mJ
Tj = 125 °C
665
ns
Tj = 125 °C
105
ns
Tj = 125 °C
77
mJ
per IGBT
0.1
K/W
GB
© by SEMIKRON
Rev. 3 – 13.01.2012
1
SEMiX302GB176HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chip
VF0
rF
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB176HDs
IRRM
Qrr
Err
Rth(j-c)
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Tj = 25 °C
Tj = 125 °C
typ.
max.
Unit
1.5
1.70
V
1.4
1.6
V
Tj = 25 °C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
Tj = 25 °C
2.0
2.0
2.0
m
2.7
2.7
m
Tj = 125 °C
IF = 200 A
Tj = 125 °C
di/dtoff = 3100 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
2.7
235
A
77
µC
43
mJ
0.15
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
18
nH
TC = 25 °C
0.7
m
TC = 125 °C
1
m
0.045
to terminals (M6)
Mt
K/W
3
5
2.5
5
Nm
Nm
Nm
w
250
g
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
493 ± 5%

3550
±2%
K
GB
2
Rev. 3 – 13.01.2012
© by SEMIKRON
SEMiX302GB176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 13.01.2012
3
SEMiX302GB176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 3 – 13.01.2012
© by SEMIKRON
SEMiX302GB176HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 13.01.2012
5