Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2352
Power MOSFET
-30V, -1.3A P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION

As P-Channel Logic Level MOSFET, UT2352 has been
optimized for battery power management applications. And it’s
produced using UTC’s advanced Power Trench process.

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT2352G-AE3-R
UT2352G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
DFN-8(3×3)
S: Source
1
S
S
2
G
S
Pin Assignment
3
4
5
6
D
S
G
D
D
7
D
8
D
acking
Tape Reel
Tape Reel
MARKING
SOT-23
DFN-8(3×3)
BCBG
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UT2352

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
RATING
UNIT
-30
V
±25
V
-1.3
A
-10
A
SOT-23
0.46
W
Power Dissipation (Note 3)
PD
DFN-8(3×3)
2.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction-to-Ambient (Note 3)
Junction-to-Case

SYMBOL
SOT-23
DFN-8(3×3)
SOT-23
DFN-8(3×3)
θJA
θJC
RATING
250
52
75
3
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±25V, VDS=0V
Breakdown Voltage Temperature
∆BVDSS/∆TJ Reference to 25℃, ID=-250uA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.8
Drain-Source On-State Resistance
VGS=-10V, ID=-1.3A
RDS(ON)
(Note 2)
VGS=-4.5V, ID=-1.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=-10V, VGS=-4.5V,
Gate-Source Charge
QGS
ID=-0.9A
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
VDD=-10V, VGS=-10V, ID=-1A,
Turn-ON Rise Time
tR
RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
VSD
VGS=0V, IS=-0.42 A
Voltage(Note2)
Maximum Continuous Drain Source Diode
IS
Forward Current
Reverse Recovery Time
tRR
IF = -3.9 A, dIF/dt = 100 A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 0.001 in 2 pad of 2oz. copper; 270℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
-1
±100
-17
-2.0
150
250
V
uA
nA
mV/°C
-2.5
180
300
150
40
20
V
mΩ
mΩ
pF
pF
pF
1.4
0.5
0.5
4
15
10
1
1.9
8
28
18
2
nC
nC
nC
ns
ns
ns
ns
-0.8
-1.2
V
-0.42
A
17
7
ns
nC
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Normalized Drain-Source OnResistance,RDS(ON)
TYPICAL CHARACTERISTICS
Capaciyance (pF)
On-Resistance,RDS(ON) (OHM)
Drain Current,-ID (A)

Power MOSFET
Transfer Characteristics
10
100
Drain Current,-ID (A)
8
TA=-55℃
Reverse Drain Current,-IS (A)
VDS=-5V
125℃
6
25℃
4
2
0
1
4
2
3
5
6
7
Gate to Source Voltage,-VGS (V)
8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Body Diode Forward Voltage Variation with
Source Current and Temperature
VGS=0V
10
1
0.1
0.01
TA=125℃
25℃
-55℃
0.001
0.0001
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Body Diode Forward Voltage,-VSD (V)
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)

Gate Charge Characteristics
On-Resistance Variation with Temperature
10
1.4
ID=-0.9A
VGS=-10V
8
Normalized Drain-Source OnResistance RDS(ON)
Gate-Source Voltage,-VGS (V)
ID=-0.9A
VDS=-10V
-20V
6
-15V
4
2
0.5
1
1.5
2
2.5
1
0.8
0.6
-50 -25
0
0
1.2
3
Single Pulse Maximum Power Dissipation
Single Pulse
RθJA=270 /W
TA=25
30
20
10
0
10
75 100 125 150
100 1000
10
100μs
RDS(ON) Limit
1ms
1
0.1
100ms
VGS=-10V
Single Pulse
RθJA=270 /W
TA=25
0.01
0.1
10s
10ms
1s
DC
1
10
Drain-Source Voltage,-VDS (V)
100
Normalized Effective Transient
Thermal Resistance,r (t)
0.0001 0.001 0.01 0.1
1
Time,t (sec)
50
Maximum Safe Operating Area
100
Drain Current,-ID (A)
Peak Transient Power,P(pk) (W)
40
25
Junction Temperature,TJ (℃)
Gate Charge,QG (nC)
50
0
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www.unisonic.com.tw
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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