Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTD20N03
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER M OSFET
„
FEATURES
* Ambient operating temperature: 175°C
* Low drain-source and low on-resistance
* Logic level
* Perfect gate charge × RDS(ON) product
* Superior thermal resistance
* Avalanche rated
* Specified dv/dt
* For fast switching buck converters
* Halogen free
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Package
UTD20N03G-TN3-R
TO-252
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1
G
Pin Assignment
2
D
3
S
Packing
Tape Reel
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QW-R502-342.A
UTD20N03
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified))
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (TC=25°C)
ID
30
A
Pulsed Drain Current (TC=25°C)
IDM
120
A
Single Pulsed (Note 2)
EAS
15
mJ
Avalanche Energy
Repetitive (Note 3)
EAR
6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6
kV/µs
Power Dissipation (TC=25°C)
PD
60
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. ID =15 A, VDD =25 V, RGS =25 Ω
3. Repetitive Rating: Pulse width limited by TJ
4. IS =30 A, VDS =24 V, di/dt =100A/µs,TJ(MAX) = 175 °C
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
MIN
TYP
MAX
100
2.5
1.7
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =1 mA
VDS =30 V,VGS =0 V
VGS =20 V, VDS =0 V
30
VGS(TH)
VDS =VGS, ID =25µA
VGS =4.5 V, ID =15 A
VGS =10 V, ID =15 A
1.2
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25 V, VGS =0 V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD =15 V, VGS =10 V,
ID =15 A, RG =12.7 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD =15 V, ID =15 A,VGS =5V
Gate Source Charge
QGS
VDD =15 V, ID =15 A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Inverse Diode Forward Voltage
VSD
IF =30 A, VGS =0 V
Maximum Continuous Drain-Source Diode
IS
Forward Current
TC =25°C
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VR =15 V,IF = IS, dI/dt =100A/µs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
0.01
1
1
100
V
µA
nA
1.6
22.9
15.5
2
31
20
V
mΩ
mΩ
530
200
60
1.3
700
275
90
pF
pF
pF
Ω
6.2
11
23
18
8.4
2.5
6.4
9.3
17
34
27
11
3.1
9.6
ns
ns
ns
ns
nC
nC
nC
1.1
1.4
V
30
A
120
A
18
3
ns
nC
15
2
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QW-R502-342.A
UTD20N03
Power MOSFET
TYPICAL CHARACTERISTICS
„
Drain Current vs. Drain-Source
Breakdown Voltage
300
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
0
10
20
30
40
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
10
10
VGS=10V
ID=15A
8
6
VGS=4.5V
ID=15A
4
0.5
1.0
1.5
2.0
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain
Voltage
12
2
Drain Current, ID (A)
12
Drain Current, ID (A)
Drain Current vs. Gate Threshold
Voltage
8
6
4
2
0
0
0
250
200
50
100
150
Drain to Source Voltage, VDS (mV)
0
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-342.A
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