SKiiP 12ACC12T4V10
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT 1 - 6
MiniSKiiP® 1
Twin 6-pack
VCES
Tj = 25 °C
1200
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
18
A
15
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
19
A
16
A
ICnom
ICRM
ICRM = 3 x ICnom
VGES
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
tpsc
SKiiP 12ACC12T4V10
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
Tj
A
24
A
-20 ... 20
V
10
µs
-40 ... 175
°C
1200
V
IGBT 7 - 12
VCES
Tj = 25 °C
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
28
A
23
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
31
A
26
A
15
A
45
A
-20 ... 20
V
10
µs
-40 ... 175
°C
IC
ICnom
ICRM
ICRM = 3 x ICnom
VGES
• 4Q inverters
tpsc
Remarks
Tj
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Tj = 150 °C
8
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Diode 1 - 6
VRRM
Tj = 25 °C
1200
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
14
A
11
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
15
A
12
A
8
A
IFnom
IFRM
IFRM = 2xIFnom
16
A
IFSM
10 ms, sin 180°, Tj = 150 °C
55
A
-40 ... 150
°C
Tj
Diode 7 - 12
VRRM
Tj = 25 °C
1200
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
23
A
18
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
24
A
IF
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
20
A
15
A
45
A
65
A
-40 ... 175
°C
Module
It(RMS)
20 A per spring
Tstg
Visol
AC sinus 50 Hz, 1 min
20
A
-40 ... 125
°C
2500
V
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
1
SKiiP 12ACC12T4V10
Characteristics
Symbol
Conditions
IGBT 1 - 6
VCE(sat)
VCE0
MiniSKiiP® 1
Twin 6-pack
chiplevel
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
131
150
mΩ
194
206
mΩ
5.8
6.5
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
0.49
nF
f = 1 MHz
0.05
nF
f = 1 MHz
0.03
nF
45
nC
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
SKiiP 12ACC12T4V10
IC = 8 A
VGE = 15 V
chiplevel
min.
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 150 °C
mA
• 4Q inverters
Rth(j-s)
Tj = 25 °C
VCC = 600 V
Tj = 125 °C
IC = 8 A
Tj = 125 °C
RG on = 51 Ω
Tj = 125 °C
RG off = 51 Ω
Tj = 125 °C
di/dton = 97 A/µs
di/dtoff = 106 A/µs Tj = 125 °C
du/dt = 3300 V/µs
VGE = +15/-15 V
Tj = 125 °C
Ls = 22 nH
per IGBT, λpaste=0.8 W/(mK)
Remarks
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
td(on)
tr
Eon
td(off)
tf
Eoff
IGBT 7 - 12
IC = 15 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
rCE
VGE(th)
ICES
Cies
Coes
Cres
VGE = 15 V
chiplevel
VCE = 25 V
VGE = 0 V
0.0
Ω
117
ns
70
ns
1
mJ
300
ns
120
ns
0.7
mJ
1.84
K/W
1.6
K/W
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
70
80
mΩ
Tj = 150 °C
103
110
mΩ
VGE = VCE V, IC = 1 mA
VGE = 0 V
VCE = 1200 V
5
5.8
6.5
V
Tj = 25 °C
5
0.1
0.3
mA
-
mA
f = 1 MHz
0.90
nF
f = 1 MHz
0.08
nF
f = 1 MHz
0.06
nF
nC
QG
VGE = - 8 V...+ 15 V
85
RGint
0
Ω
92
ns
74
ns
2.1
mJ
319
ns
77
ns
1.6
mJ
Rth(j-s)
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 15 A
Tj = 150 °C
RG on = 39 Ω
Tj = 150 °C
RG off = 39 Ω
di/dton = 188 A/µs Tj = 150 °C
di/dtoff = 200 A/µs Tj = 150 °C
du/dt = 3500 V/µs
VGE = +15/-15 V
Tj = 150 °C
Ls = 22 nH
per IGBT, λpaste=0.8 W/(mK)
1.3
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
1.1
K/W
td(on)
tr
Eon
td(off)
tf
Eoff
ACC
2
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
Characteristics
Symbol
Conditions
typ.
max.
Unit
Tj = 25 °C
1.96
2.22
V
Tj = 125 °C
2.08
2.34
V
Tj = 25 °C
1.00
1.10
V
Tj = 125 °C
0.80
0.90
V
Tj = 25 °C
120
140
mΩ
160
180
mΩ
Rth(j-s)
Tj = 125 °C
IF = 8 A
Tj = 125 °C
di/dtoff = 93 A/µs
Tj = 125 °C
VGE = -15 V
Tj = 125 °C
VCC = 600 V
per Diode, λpaste=0.8 W/(mK)
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
Diode 1 - 6
VF = VEC
VF0
rF
MiniSKiiP® 1
IRRM
Qrr
Twin 6-pack
Err
SKiiP 12ACC12T4V10
Features
IRRM
Typical Applications*
Qrr
Remarks
• Max. case temperature limited to
TC=125°C
• Terminal distances sufficient for basic
insulation in 3-phase 480VAC TN
systems
• DC-link voltage VDC≤800V
• Max. 500V potential difference
between +rect and +DC
• Max. 500V potential difference
between -rect and -DC
• Temperature sensor: no basic
insulation to main circuit, signal
processing with reference to -DC
potential
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
chiplevel
chiplevel
Diode 7 - 12
VF = VEC IF = 15 A
VGE = 0 V
chiplevel
VF0
chiplevel
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• 4Q inverters
IF = 8 A
VGE = 0 V
chiplevel
rF
chiplevel
min.
5.4
A
1.9
µC
0.8
mJ
2.5
K/W
2.2
K/W
Tj = 25 °C
2.38
2.71
V
Tj = 150 °C
2.44
2.77
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
72
81
mΩ
103
111
mΩ
0.8
mJ
Rth(j-s)
Tj = 150 °C
IF = 15 A
Tj = 150 °C
di/dtoff = 220 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per Diode, λpaste=0.8 W/(mK)
1.92
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
1.7
K/W
Err
8.9
A
2.2
µC
Module
60
LCE
Ms
to heat sink
w
2
nH
2.5
Nm
30
g
1670 ±
3%
Ω
Temperature Sensor
R100
Tr=100°C (R25=1000Ω)
R(T)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
ACC
© by SEMIKRON
Rev. 5.0 – 20.11.2015
3
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 1:
Typ. output characteristic
IGBT 1-6 - Fig. 2:
Typ. rated current vs. temperature IC = f(TS)
IGBT 1-6 - Fig. 3:
Typ. turn-on /-off energy = f(IC)
IGBT 1-6 - Fig. 4:
Typ. turn-on /-off energy = f(RG)
IGBT 1-6 - Fig. 5:
Typ. transfer characteristic
IGBT 1-6 - Fig. 6:
Typ. gate charge characteristic
4
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
IGBT 1-6 - Fig. 7:
Typ. switching times vs. IC
IGBT 1-6 - Fig. 8:
Typ. switching times vs. gate resistor RG
IGBT 1-6 - Fig. 9:
Transient thermal impedance of IGBT and Diode
IGBT 1-6 - Fig. 10:
CAL diode forward characteristic
IGBT 1-6 - Fig. 11:
Typ. CAL diode peak reverse recovery current
IGBT 1-6 - Fig. 12:
Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 5.0 – 20.11.2015
5
SKiiP 12ACC12T4V10
IGBT 7-12 - Fig. 1:
Typ. output characteristic
IGBT 7-12 - Fig. 2:
Typ. rated current vs. temperature IC = f(TS)
IGBT 7-12 - Fig. 3:
Typ. turn-on /-off energy = f(IC)
IGBT 7-12 - Fig. 4:
Typ. turn-on / -off energy = f(RG)
IGBT 7-12 - Fig. 5:
Typ. transfer characteristic
IGBT 7-12 - Fig. 6:
Typ. gate charge characteristic
6
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
IGBT 7-12 - Fig. 7:
Typ. switching times vs. IC
IGBT 7-12 - Fig. 8:
Typ. switching times vs. gate resistor RG
IGBT 7-12 - Fig. 9:
Transient thermal impedance of IGBT and Diode
IGBT 7-12 - Fig. 10:
CAL diode forward characteristic
IGBT 7-12 - Fig. 11:
Typ. CAL diode peak reverse recovery current
IGBT 7-12 - Fig. 12:
Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 5.0 – 20.11.2015
7
SKiiP 12ACC12T4V10
pinout, dimensions
pinout
8
Rev. 5.0 – 20.11.2015
© by SEMIKRON
SKiiP 12ACC12T4V10
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
© by SEMIKRON
Rev. 5.0 – 20.11.2015
9