SKiiP 28MLI07E3V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
MiniSKiiP® 2
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
Features
• 650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
• Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; TC=TS (valid for baseplate-less
modules)
• Product reliability results are valid for
Tjop=150°C
650
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
135
A
107
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
163
A
130
A
150
A
450
A
-20 ... 20
V
6
µs
-40 ... 175
°C
A
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 650 V
Tj = 150 °C
Inverse diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
126
97
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
151
A
118
A
150
A
IFnom
IFRM
IFRM = 2 x IFnom
300
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
-40 ... 175
°C
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
126
A
97
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
151
A
118
A
150
A
Tj
Clamping diode
IF
IF
IFnom
IFRM
IFRM = 2 x IFnom
300
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1200
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80°C, 20A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
120
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 150 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.90
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.90
1.00
V
Tj = 150 °C
0.82
0.90
V
Tj = 25 °C
3.7
6.0
mΩ
5.9
8.0
mΩ
5.8
6.4
V
0.1
0.3
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 2.4 mA
ICES
VGE = 0 V
VCE = 650 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
Tj = 25 °C
5.1
-
mA
f = 1 MHz
9.24
nF
f = 1 MHz
0.58
nF
f = 1 MHz
0.27
nF
MLI
© by SEMIKRON
Rev. 1.0 – 03.06.2016
1
SKiiP 28MLI07E3V1
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
1200
nC
2.0
Ω
T1 / T4
td(on)
Eoff
VCE = 300 V
IC = 150 A
VGE = +15/-15 V
RG on = 3 Ω
RG off = 1.6 Ω
di/dton = 2100 A/µs
di/dtoff = 1700 A/µs
Rth(j-s)
Rth(j-s)
tr
MiniSKiiP® 2
Eon
td(off)
tf
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
• 650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
• Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; TC=TS (valid for baseplate-less
modules)
• Product reliability results are valid for
Tjop=150°C
108
ns
73
ns
Tj = 150 °C
5.5
mJ
Tj = 150 °C
268
ns
Tj = 150 °C
76
ns
Tj = 150 °C
5.6
mJ
per IGBT, λpaste=0.8 W/(mK)
0.55
K/W
per IGBT, λpaste=2.5 W/(mK)
0.41
K/W
Tj = 150 °C
106
ns
Tj = 150 °C
64
ns
Tj = 150 °C
2
mJ
Tj = 150 °C
268
ns
Tj = 150 °C
77
ns
T2 / T3
td(on)
Eoff
VCE = 300 V
IC = 150 A
VGE = +15/-15 V
RG on = 3 Ω
RG off = 1.6 Ω
di/dton = 2520 A/µs
di/dtoff = 1750 A/µs
5.2
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.55
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.41
K/W
tr
Features
Tj = 150 °C
Tj = 150 °C
Eon
td(off)
tf
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
Tj = 150 °C
Tj = 25 °C
1.40
1.76
V
Tj = 150 °C
1.39
1.77
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
2.4
3.5
mΩ
3.6
5.2
mΩ
Err
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 2450 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
5.5
mJ
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
0.75
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
0.58
K/W
IRRM
Qrr
Clamping diode
VF = VEC IF = 150 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
µC
1.40
1.76
V
Tj = 150 °C
1.39
1.77
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
2.4
3.5
mΩ
3.6
5.2
mΩ
Err
Rth(j-s)
Rth(j-s)
Qrr
A
20
Tj = 25 °C
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 2210 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
IRRM
121
116
A
13.2
µC
2.6
mJ
per Diode, λpaste=0.8 W/(mK)
0.75
K/W
per Diode, λpaste=2.5 W/(mK)
0.58
K/W
Module
Ms
to heat sink
w
weight
2
2.5
Nm
55
g
5.0 ± 5%
kΩ
Temperature Sensor
MLI
2
R25
NTC, Tr = 25 °C 1)
Rev. 1.0 – 03.06.2016
© by SEMIKRON
SKiiP 28MLI07E3V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 03.06.2016
3
SKiiP 28MLI07E3V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1.0 – 03.06.2016
© by SEMIKRON
SKiiP 28MLI07E3V1
pinout, dimensions
pinout
© by SEMIKRON
Rev. 1.0 – 03.06.2016
5
SKiiP 28MLI07E3V1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6
Rev. 1.0 – 03.06.2016
© by SEMIKRON