SKiiP 39TMLI12T4V2
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT1
MiniSKiiP® 3
VCES
Tj = 25 °C
1200
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
235
A
191
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
290
A
236
A
200
A
600
A
-20 ... 20
V
6
µs
-40 ... 175
°C
ICnom
ICRM
VGES
tpsc
Tj
SKiiP 39TMLI12T4V2
Target Data
Features
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks*
• Case temperature limited to TC= 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Top=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
• It(RMS) = 160A max. for power terminals
ICRM = 3 x ICnom
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 1200 V
IGBT2
VCES
Tj = 25 °C
650
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
207
A
165
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
240
A
192
A
200
A
600
A
-20 ... 20
V
6
µs
-40 ... 175
°C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C,
VCES ≤ 650 V
Diode1
VRRM
Tj = 25 °C
1200
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
194
A
154
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
224
A
179
A
200
A
600
A
IF
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 25 °C
Tj
990
A
-40 ... 175
°C
Diode2
VRRM
Tj = 25 °C
650
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
223
A
174
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
255
A
200
A
200
A
IFnom
IFRM
IFRM = 2 x IFnom
400
A
IFSM
10 ms, sin 180°, Tj = 25 °C
1476
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
160
A
-40 ... 125
°C
2500
V
TMLI
© by SEMIKRON
Rev. 1.1 – 01.04.2016
1
SKiiP 39TMLI12T4V2
Characteristics
Symbol
IGBT1
VCE(sat)
VCE0
MiniSKiiP® 3
IC = 200 A
VGE = 15 V
chiplevel
chiplevel
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
5.0
5.8
mΩ
7.5
8.0
mΩ
5.8
6.5
V
0.3
mA
VGE = VCE, IC = 12 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cres
VCE = 25 V
VGE = 0 V
- 8 V...+ 15 V
Target Data
RGint
Features
tr
Tj = 25 °C
VCE = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
di/dton = 2300 A/µs
di/dtoff = 1630 A/µs
td(on)
• Case temperature limited to TC= 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Top=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
• It(RMS) = 160A max. for power terminals
max.
VGE(th)
QG
Remarks*
typ.
VGE = 15 V
chiplevel
Coes
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
min.
rCE
Cies
SKiiP 39TMLI12T4V2
Conditions
Eon
td(off)
tf
Eoff
Tj = 150 °C
5
f = 1 MHz
12.30
nF
f = 1 MHz
0.81
nF
f = 1 MHz
0.69
nF
1130
nC
3.8
Tj = 150 °C
Ω
186
ns
Tj = 150 °C
80
ns
Tj = 150 °C
7.5
mJ
Tj = 150 °C
377
ns
Tj = 150 °C
109
ns
Tj = 150 °C
12.8
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.23
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.16
K/W
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.70
2.10
V
Tj = 25 °C
0.90
1.00
V
Tj = 150 °C
0.82
0.90
V
Tj = 25 °C
2.8
4.3
mΩ
4.4
6.0
mΩ
5.8
6.5
V
0.3
mA
IGBT2
VCE(sat)
VCE0
chiplevel
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE, IC = 3.2 mA
ICES
VGE = 0 V, VCE = 650 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
VCE = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 3300 A/µs
di/dtoff = 2200 A/µs
td(on)
tr
Eon
td(off)
tf
Eoff
Tj = 150 °C
5
f = 1 MHz
12.32
nF
f = 1 MHz
0.77
nF
f = 1 MHz
0.37
nF
1600
nC
1.0
Ω
ns
Tj = 150 °C
93
Tj = 150 °C
62
ns
Tj = 150 °C
2
mJ
Tj = 150 °C
295
ns
Tj = 150 °C
86
ns
Tj = 150 °C
9.3
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.33
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.26
K/W
TMLI
2
Rev. 1.1 – 01.04.2016
© by SEMIKRON
SKiiP 39TMLI12T4V2
Characteristics
Symbol
Diode1
VF = VEC
VF0
rF
MiniSKiiP® 3
Conditions
IF = 200 A
VGE = 0 V
chiplevel
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
4.5
5.1
mΩ
6.3
6.9
mΩ
Err
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 3700 A/µs T = 150 °C
j
VR = 300 V
VGE = +15/-15 V
Tj = 150 °C
IRRM
Qrr
219
A
31
µC
9.7
mJ
SKiiP 39TMLI12T4V2
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
0.34
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
0.27
K/W
Target Data
Diode2
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
1.40
1.76
V
Tj = 150 °C
1.38
1.77
V
Tj = 25 °C
1.04
1.24
V
Tj = 150 °C
0.85
0.99
V
Tj = 25 °C
1.78
2.6
mΩ
2.7
3.9
mΩ
VF = VEC
Features
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks*
• Case temperature limited to TC= 125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj≤150°C (recommended
Top=-40...+150°C)
• IGBT 1: outer IGBTs T1&T4
• IGBT 2: inner IGBTs T2&T3
• Diode 1: outer diodes D1&D4
• Diode 2: inner diodes D2&D3
• It(RMS) = 160A max. for power terminals
VF0
rF
chiplevel
chiplevel
154
A
22.7
µC
Err
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 2200 A/µs T = 150 °C
j
VR = 300 V
VGE = +15/-15 V
Tj = 150 °C
5.5
mJ
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
0.38
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
0.31
K/W
IRRM
Qrr
Module
nH
LsCE1
LCE
t.b.d.
nH
Ts = 25 °C
RCC'+EE'
mΩ
mΩ
Ms
to heat sink
2
2.5
to heat sink
Mt
Nm
Nm
Nm
w
82
g
Temperature Sensor
R100
Tr=100°C (R25=1000Ω)
1670 ±
3%
Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]
3550 ±
2%
K
TMLI
© by SEMIKRON
Rev. 1.1 – 01.04.2016
3
SKiiP 39TMLI12T4V2
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
4
Rev. 1.1 – 01.04.2016
© by SEMIKRON
SKiiP 39TMLI12T4V2
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 1.1 – 01.04.2016
5
SKiiP 39TMLI12T4V2
Fig. 13: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 14: Rated current vs. temperature IC= f (Ts)
Fig. 15: Typ. turn-on /-off energy = f (IC)
Fig. 16: Typ. turn-on /-off energy = f (RG)
Fig. 17: Typ. transfer characteristic
Fig. 18: Typ. gate charge characteristic
6
Rev. 1.1 – 01.04.2016
© by SEMIKRON
SKiiP 39TMLI12T4V2
Fig. 19: Typ. switching times vs. IC
Fig. 20: Typ. switching times vs. gate resistor RG
Fig. 21: Transient thermal impedance of IGBT and Diode
Fig. 22: CAL diode forward characteristic
Fig. 23: Typ. CAL diode peak reverse recovery current
Fig. 24: Typ. CAL diode recovery charge
© by SEMIKRON
Rev. 1.1 – 01.04.2016
7
SKiiP 39TMLI12T4V2
pinout, dimensions
pinout
8
Rev. 1.1 – 01.04.2016
© by SEMIKRON
SKiiP 39TMLI12T4V2
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
© by SEMIKRON
Rev. 1.1 – 01.04.2016
9