SKM100GB17E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 164 A Tc = 80 °C 127 A 100 A ICnom ICRM SEMITRANS® 2 IGBT4 Modules SKM100GB17E4 VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V 300 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 113 A Tc = 80 °C 83 A 100 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* • • • • • AC inverter drives UPS Electronic welders Wind power Public transport Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C IFRM IFRM = 2xIFnom 200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 650 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min 200 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 100 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 4 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Eoff Tj = 25 °C VCC = 1200 V IC = 100 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 2540 A/µs di/dtoff = 610 A/µs du/dt = 5430 V/µs Rth(j-c) per IGBT td(on) tr Eon td(off) tf min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.30 2.60 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 11 13 mΩ 16 18 mΩ 5.8 6.4 V 1 mA Tj = 150 °C 5.2 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9 nF f = 1 MHz 0.34 nF f = 1 MHz 0.29 nF 800 nC 7.5 Tj = 150 °C Ω 234 ns Tj = 150 °C 39 ns Tj = 150 °C 43 mJ Tj = 150 °C 657 ns Tj = 150 °C 136 ns Tj = 150 °C 39 mJ 0.234 K/W GB © by SEMIKRON Rev. 4.0 – 24.06.2015 1 SKM100GB17E4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 100 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 2 IGBT4 Modules SKM100GB17E4 IRRM Qrr Err Rth(j-c) • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 2.00 2.40 V Tj = 150 °C 2.15 2.57 V Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V Tj = 25 °C 6.8 8.4 mΩ 11 14 mΩ Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 2360 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 1200 V per diode 86 A 34 µC 26 mJ 0.504 K/W Module LCE RCC'+EE' Features chiplevel min. terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 30 nH TC = 25 °C 0.65 mΩ TC = 125 °C 1.09 mΩ 0.04 to terminals M5 0.05 K/W 3 5 Nm 2.5 5 Nm Nm w 160 g Typical Applications* • • • • • AC inverter drives UPS Electronic welders Wind power Public transport Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C GB 2 Rev. 4.0 – 24.06.2015 © by SEMIKRON SKM100GB17E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4.0 – 24.06.2015 3 SKM100GB17E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 4.0 – 24.06.2015 © by SEMIKRON SKM100GB17E4 SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4.0 – 24.06.2015 5