datasheet

SKM200GAR17E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1700
V
Tc = 25 °C
321
A
Tc = 80 °C
248
A
200
A
ICnom
ICRM
SEMITRANS® 3
IGBT4 Modules
SKM200GAR17E4
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 1000 V
VGE ≤ 15 V
VCES ≤ 1700 V
600
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
213
A
Tc = 80 °C
157
A
200
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1170
A
-40 ... 175
°C
Tc = 25 °C
213
A
Tc = 80 °C
157
A
200
A
Tj
Freewheeling diode
IF
IFnom
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1170
A
-40 ... 175
°C
Typical Applications*
Tj
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Tstg
Remarks
Visol
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Tj = 175 °C
Module
It(RMS)
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 200 A
VGE = 15 V
chiplevel
chiplevel
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 8 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
min.
typ.
max.
Unit
Tj = 25 °C
1.90
2.20
V
Tj = 150 °C
2.30
2.60
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
5.50
6.50
mΩ
8.00
9.00
mΩ
5.8
6.4
V
2.7
mA
Tj = 150 °C
5.2
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
18
nF
f = 1 MHz
0.68
nF
f = 1 MHz
0.58
nF
1600
nC
3.8
Ω
GAR
© by SEMIKRON
Rev. 1 – 01.04.2015
1
SKM200GAR17E4
Characteristics
Symbol
Eoff
Rth(j-c)
per IGBT
tr
Eon
td(off)
tf
SEMITRANS® 3
IGBT4 Modules
SKM200GAR17E4
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Conditions
VCC = 1200 V
IC = 200 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
di/dton = 6830 A/µs
di/dtoff = 1120 A/µs
du/dt = 5250 V/µs
td(on)
IRRM
Qrr
Err
Rth(j-c)
chiplevel
IRRM
Qrr
Err
Rth(j-c)
chiplevel
typ.
max.
Unit
259
ns
Tj = 150 °C
35
ns
Tj = 150 °C
69
mJ
Tj = 150 °C
712
ns
Tj = 150 °C
149
ns
Tj = 150 °C
79
mJ
0.122
K/W
Tj = 25 °C
2.00
2.40
V
Tj = 150 °C
2.15
2.57
V
Tj = 25 °C
1.32
1.56
V
Tj = 150 °C
1.08
1.22
V
Tj = 25 °C
3.4
4.2
mΩ
5.4
6.8
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 5910 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 1200 V
per diode
Freewheeling diode
VF = VEC IF = 200 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
min.
Tj = 150 °C
272
A
63
µC
45
mJ
0.276
K/W
Tj = 25 °C
2.00
2.40
V
Tj = 150 °C
2.15
2.57
V
Tj = 25 °C
1.32
1.56
V
Tj = 150 °C
1.08
1.22
V
Tj = 25 °C
3.4
4.2
mΩ
5.4
6.8
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 5910 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 1200 V
per Diode
272
A
63
µC
45
mJ
0.276
K/W
Module
LCE
RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
15
nH
TC = 25 °C
0.55
mΩ
TC = 125 °C
0.85
mΩ
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
GAR
2
Rev. 1 – 01.04.2015
© by SEMIKRON
SKM200GAR17E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 01.04.2015
3
SKM200GAR17E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1 – 01.04.2015
© by SEMIKRON
SKM200GAR17E4
SEMITRANS 3
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 01.04.2015
5