SKM400GB07E3 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 650 V Tc = 25 °C 506 A Tc = 80 °C 381 A 400 A ICnom ICRM SEMITRANS® 3 Trench IGBT Modules SKM400GB07E3 VGES tpsc Tj ICRM = 3xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V 1200 A -20 ... 20 V 6 µs -40 ... 175 °C Tc = 25 °C 449 A Tc = 80 °C 326 A 400 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated gate resistor Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2646 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol A °C 4000 V Characteristics Symbol IGBT VCE(sat) Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C • Use of soft RG necessary AC sinus 50 Hz, t = 1 min 500 -40 ... 125 VCE0 Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.45 1.92 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 1.38 2.3 mΩ 2.2 3.00 mΩ 5.8 6.4 V 0.75 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 6.4 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 300 V IC = 400 A VGE = +15/-8 V RG on = 1 Ω RG off = 4.2 Ω di/dton = 7000 A/µs di/dtoff = 5000 A/µs du/dt = 2200 V/µs Ls = 18 nH per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C 5.1 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 24.7 nF f = 1 MHz 1.54 nF f = 1 MHz 0.73 nF 3200 nC 1 Tj = 150 °C Ω 190 ns Tj = 150 °C 60 ns Tj = 150 °C 4 mJ Tj = 150 °C 850 ns Tj = 150 °C 50 ns Tj = 150 °C 17 mJ 0.12 K/W GB © by SEMIKRON Rev. 1.0 – 21.05.2015 1 SKM400GB07E3 Characteristics Symbol Conditions typ. max. Unit Tj = 25 °C 1.39 1.75 V Tj = 150 °C 1.38 1.76 V Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 0.88 1.30 mΩ Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 7000 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per diode 1.32 1.93 mΩ 15 nH TC = 25 °C 0.55 mΩ TC = 125 °C 0.85 mΩ Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 3 Trench IGBT Modules SKM400GB07E3 IRRM Qrr Err Rth(j-c) • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated gate resistor 459 A 61 µC 12 mJ 0.19 K/W Module LCE RCC'+EE' Features chiplevel min. terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C • Use of soft RG necessary GB 2 Rev. 1.0 – 21.05.2015 © by SEMIKRON SKM400GB07E3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 21.05.2015 3 SKM400GB07E3 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1.0 – 21.05.2015 © by SEMIKRON SKM400GB07E3 SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1.0 – 21.05.2015 5