datasheet

SKM 100GB173D
Absolute Maximum Ratings
Symbol Conditions
IGBT
&6
&
&9:
;6
3%= *3
SEMITRANSTM 2
IGBT Modules
SKM 100GB173D
#:
4 +, B /B 3= 4 +0, 5&
Characteristics
Symbol Conditions
IGBT
&6*-
Typical Applications
'& %
%
010 "
10, '&
(& %
10, "+.,, (&
2 * / * -
Units
+1,,
++, *10+0,
< .,
" @, /// A +0, *+.0-
'
'
5&
@,,,
8, *0,+0,
'
'
1.,
'
'& + /
#9:
&6*3>&6
3>269'3 > ? 3
3 4 .0 *8,- 5&
4 + #
&6
!" # $ %
&'! (&) (
&
)
!
*+, - *., -/
3 4 .0 *8,- 5&
4 + Values
Inverse diode
;6*-
Features
3 4 .0 5& 3 4 .0 5& ;6 4 &6 & 4 '
;6 4 , &6 4 &6 3= 4 .0 *+.0- 5&
3= 4 .0 *+.0- 5&
;6 4 +0 3= 4 .0 *+.0- 5&
&
min.
@8
4 10 ' ;6 4 +0 %
&
&
&
!&6
;6 4 , &6 4 .0 4 + :F
9&&GA66G
/ " 34 ,10 *+- 5&
*
*
&& 4 +.,, & 4 10 '
9; 4 9; 4 +, E 3= 4 +.0 5&
;6 4 < +0 typ.
max.
Units
00
,+
+0 *+D.CC *CCC-
.
,C
+D *.+0. *C8-
'
E
C@ *@@-
CD *0-
C,
#
#
#
++
+
,.8
E
6 *6-
@,
@0
@,,
0
C0 *.+-
H
Inverse diode
# 4 6&
*3>3
I
# 4 10 'B ;6 4 , B 3= 4 .0 *+.0- 5&
3= 4 +.0 *- 5&
3= 4 +.0 *- 5&
# 4 10 'B 3= 4 .0 * +.0 - 5&
J 4 'JK
6
;6 4 99:
.. *.+C
D
C8 *0+8 *+D-
.1 *.C+0
+C
E
'
K&
H
FWD
# 4 6&
*3>3
I
# 4 +,, 'B ;6 4 3= 4 .0 *+.0- 5&
3= 4 +.0 *- 5&
3= 4 +.0 *- 5&
# 4 +,, 'B 3= 4 .0 *+.0 - 5&
J 4 'JK
6
;6 4 99:
.. *+D+.
1
.1 *.@+0
D
+, *.1-
E
'
K&
H
Thermal characteristics
9*="9*="-(
9*="-#(
;)3
%
(
#M(
,.
,C
,@
LJM
LJM
LJM
9*"-
,,0
LJM
0
0
+,
Mechanical data
:
:
N :
:0
C
.0
GB
1
27-03-2006 RAA
© by SEMIKRON
SKM 100GB173D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
27-03-2006 RAA
© by SEMIKRON
SKM 100GB173D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
27-03-2006 RAA
© by SEMIKRON
SKM 100GB173D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
;)
;'!
&
( +
&
( . *O ( +-
&
( +
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
27-03-2006 RAA
© by SEMIKRON
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