SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 SKM 150GB173D 6 7 02 ;1 8* 7 . &( 7 .1 C 5C 6? 7 .21 8* Typical Applications +* 232 ' 321 +* ,* " 321 ' .011 ,* 4" %! !5 # 7 *9 &* 7 ; + 7 1 *9 7 *9 6? 7 02 .02 8* 6? 7 02 .02 8* =9 7 .2 6? 7 02 .02 8* A; =9 *9 min. =9 *9 &* 7 .11 + .02 ;1 011 + + ..11 + 6 7 02 8* # Characteristics Symbol Conditions IGBT *96 8* A111 &( &(< =9 "! # $ % & ' # ( ) # *+ & " ,*- , * - ./ 01 649<+6& @ 6 + + Inverse diode &*9 Features ! Units .311 .21 .11 011 > 01 ' A1 555 B .21 .02 +* . 5 IGBT Modules Values 6 7 02 ;1 8* 7 . 6? 6 SEMITRANSTM 3 6 7 02 8* # =9 7 .2 * * * *9 # =9 7 1 *9 7 02 # 7 . F <**GB99G 5 ' 67 02 .02 8* ## # ** 7 .011 &* 7 .11 + <= 7 <=## 7 2 E 6? 7 .02 8* =9 7 > .2 typ. max. 22 1. .$2 .D .32 0/ $0 1/ .D 0.2 01 0;2 /A A0 /D 2 .$ ./ 12 01 9 9## Units + E ( ( ( 1/2 12 E A31 D1 $21 21 $1 /0 H Inverse diode ( 7 9* 6 6 &<< I 9 &( 7 .11 +C =9 7 1 C 6? 7 02 .02 8* 6? 7 .02 8* 6? 7 .02 8* &( 7 .11 +C 6? 7 02 .02 8* J 7 .111 +JK =9 00 .D 03 0A .0 3 21 31 .1 03 .2 D 7 E + K* H Thermal characteristics <?' <?', &=-6 & , 1.02 1A LJM LJM <' 11/; LJM 2 2 /02 Mechanical data N $ $ / 02 GB 1 27-03-2006 RAA © by SEMIKRON SKM 150GB173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 27-03-2006 RAA © by SEMIKRON SKM 150GB173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 27-03-2006 RAA © by SEMIKRON SKM 150GB173D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm =- * ,2$ * , 2$ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 27-03-2006 RAA © by SEMIKRON