datasheet

SKM600GAL126D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
1200
V
Tc = 25 °C
660
A
Tc = 80 °C
461
A
400
A
ICnom
ICRM
SEMITRANS® 3
Trench IGBT Modules
SKM600GAL126D
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
800
A
-20 ... 20
V
10
µs
-40 ... 150
°C
Tc = 25 °C
490
A
Tc = 80 °C
337
A
400
A
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
IFnom
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• IDC ≤ 500A for TTerminal = 100 °C
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
3312
A
-40 ... 150
°C
Tc = 25 °C
490
A
Tc = 80 °C
337
A
400
A
Tj
Freewheeling diode
IF
Tj = 150 °C
IFnom
IFRM
IFRM = 2xIFnom
800
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
3312
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Conditions
IC = 400 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.70
2.12
V
Tj = 125 °C
2.02
2.46
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
1.75
2.3
mΩ
2.8
3.4
mΩ
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 16 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
Tj = 125 °C
5
Tj = 25 °C
Tj = 125 °C
mA
f = 1 MHz
28.8
nF
f = 1 MHz
1.51
nF
f = 1 MHz
1.31
nF
3600
nC
1.9
Ω
GAL
© by SEMIKRON
Rev. 1.0 – 20.07.2015
1
SKM600GAL126D
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 600 V
IC = 400 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
Eoff
SEMITRANS® 3
Trench IGBT Modules
SKM600GAL126D
Rth(j-c)
Features
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x IC
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• IDC ≤ 500A for TTerminal = 100 °C
IRRM
Qrr
Err
Rth(j-c)
chiplevel
IRRM
Qrr
Err
Rth(j-c)
chiplevel
max.
Unit
290
ns
Tj = 125 °C
60
ns
Tj = 125 °C
39
mJ
Tj = 125 °C
670
ns
Tj = 125 °C
80
ns
Tj = 125 °C
64
mJ
0.055
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
1.50
1.75
mΩ
2.00
2.3
mΩ
Tj = 125 °C
IF = 400 A
Tj = 125 °C
di/dtoff = 7600 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
typ.
per IGBT
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
min.
Tj = 125 °C
475
A
96
µC
41
mJ
0.125
K/W
Tj = 25 °C
1.60
1.80
V
Tj = 125 °C
1.60
1.80
V
Tj = 25 °C
1
1.1
V
Tj = 125 °C
0.8
0.9
V
Tj = 25 °C
1.50
1.75
mΩ
Tj = 125 °C
2.00
2.3
mΩ
IF = 400 A
Tj = 125 °C
di/dtoff = 7600 A/µs T = 125 °C
j
VGE = ±15 V
T
j = 125 °C
VCC = 600 V
per Diode
475
A
96
µC
41
mJ
0.125
K/W
Module
LCE
RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
15
nH
TC = 25 °C
0.35
mΩ
TC = 125 °C
0.5
mΩ
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
GAL
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM600GAL126D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 20.07.2015
3
SKM600GAL126D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 20.07.2015
© by SEMIKRON
SKM600GAL126D
SEMITRANS 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 20.07.2015
5