UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 3A NPN LOW VCE(SAT) TRANSISTOR DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply voltage applications and inductive load driver. FEATURES * Collector-emitter saturation voltage:50V * High collector current gain (hFE) under high IC conditions * High collector current capability * Higher efficiency resulting in less heat generation * Complementary to UTC USS5350 ORDERING INFORMATION Ordering Number Lead Free Haiogen Free USS4350L-AA3-R USS4350G-AA3-R USS4350L-AB3-R USS4350G-AB3-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel 1 of 3 QW-R207-022.D USS4350 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 60 V 50 V 6 V DC 3 A Collector Current Peak 5 A Peak Base Current 1 A SOT-89 1.4 Power Dissipation (TC=25°C) (Note 2) PD W SOT-223 2 Junction Temperature TJ 150 °C Operating Temperature TOPR -65 ~ +150 °C Storage Temperature TSTG -65 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2 SYMBOL VCBO VCEO VEBO IC ICM IBM THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-89 90 Junction to Ambient (Note) θJA °C/W SOT-223 62.5 Note: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage DC Current Gain Equivalent On-Resistance Transition Frequency Collector Capacitance SYMBOL TEST CONDITIONS ICBO VCB=50 V, IE =0 IEBO VEB=5 V, IC =0 IC=500 mA, IB=50 mA VCE(SAT) IC=1 A, IB=50 mA IC=2 A, IB=200 mA (Note) VBE(SAT) IC=2 A, IB=200 mA (Note) VBE(ON) VCE =2V; IC = 1 A (Note) hFE1 VCE =2V, IC=500 mA hFE2 VCE =2V, IC=1 A (Note) hFE3 VCE =2V, IC=2 A (Note) RCE(SAT) IC=2 A, IB=200 mA (Note) fT IC=100 mA, VCE=5 V, f=100 MHz CC VCB=10 V; IE =Ie = 0; f =1 MHz MIN TYP MAX UNIT 100 nA 100 nA mV 90 170 mV 290 mV V 1.2 V 1.1 110 <145 200 200 100 100 30 mΩ MHz pF Note: Pulse test: tP ≤300 μs; Duty cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R207-022.D USS4350 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICE PC - TA 2800 2400 2000 SOT-223 1600 1200 SOT-89 800 400 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA(°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-022.D