UNISONIC TECHNOLOGIES CO., LTD UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC UG9J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc. The UTC UG9J is suitable for switching, inverter circuit and driver circuit applications. FEATURES * Low collector-emitter saturation voltage * With built-in bias resistors * Simplify circuit design EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number UG9JG-AL5-R Note: Pin Assignment: B: Base C: Collector UG9JG-AL5-R Package SOT-353 E: Emitter 1 B1 Pin Assignment 2 3 4 E B2 C2 (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL5: SOT-353 (3)Green Package (3) G: Halogen Free and Lead Free 5 C1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-025.a UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V Collector Current IC 100 mA Collector Power Dissipation (Total rating) PC 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These characteristics apply to TR1 and TR2. ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL ICBO Collector Cut-Off Current ICEO Emitter Cut-Off Current IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) Input Voltage (ON) VIN(ON) Input Voltage (OFF) VIN(OFF) Transition Frequency fT Input Resistor R1 Resistor Ratio R1 / R2 Note: These characteristics apply to TR1 and TR2. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VCB=50V, IE=0 VCE=50V, IB=0 VEB=10V, IC=0 VCE=5V, IC=10mA IC=5mA, IB=0.25mA VCE=0.2V, IC=5mA VCE=5V, IC=0.1mA VCE=10V, IE=5mA MIN TYP MAX 100 500 0.71 UNIT nA nA mA 0.1 0.3 2.4 1.5 V V V MHz kΩ 0.38 50 1.2 1.0 7 0.9 250 10 1.0 13 1.1 2 of 3 QW-R221-025.a UG9J Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R221-025.a