4N25, 4N26, 4N27, 4N28 Datasheet

4N25, 4N26, 4N27, 4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A
1
6 B
C
2
5 C
NC
3
4 E
• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
21842
APPLICATIONS
i179004-5
• AC mains detection
• Reed relay driving
DESCRIPTION
• Switch mode power supply feedback
The 4N25 family is an industry standard single channel
phototransistor coupler. This family includes the 4N25,
4N26, 4N27, 4N28. Each optocoupler consists of gallium
arsenide infrared LED and a silicon NPN phototransistor.
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO: EN 60950, EN 60065, EN 60335
ORDER INFORMATION
PART
REMARKS
4N25
CTR > 20 %, DIP-6
4N26
CTR > 20 %, DIP-6
4N27
CTR > 10 %, DIP-6
4N28
CTR > 10 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
mA
INPUT
Reverse voltage
Forward current
IF
60
IFSM
3
A
Pdiss
100
mW
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7
V
t ≤ 10 μs
Surge current
Power dissipation
OUTPUT
Collector current
Power dissipation
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132
t ≤ 1 ms
IC
50
mA
IC
100
mA
Pdiss
150
mW
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VISO
COUPLER
Isolation test voltage
5000
VRMS
Creepage distance
≥7
mm
Clearance distance
≥7
mm
≥ 0.4
mm
Isolation thickness between emitter and
detector
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Ω
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 125
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
125
°C
Tsld
260
°C
Isolation resistance
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Soldering temperature (2)
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
IF = 50 mA
VF
1.3
1.5
V
Reverse current (2)
VR = 3 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector base breakdown voltage (2)
IC = 100 μA
BVCBO
70
Collector emitter breakdown voltage (2)
IC = 1 mA
BVCEO
30
V
Emitter collector breakdown voltage (2)
IE = 100 μA
BVECO
7
V
ICEO(dark) (2)
VCE = 10 V, (base open)
4N25
5
50
nA
4N26
5
50
nA
4N27
5
50
nA
4N28
10
100
nA
2
20
nA
VCB = 10 V,
(emitter open)
ICBO(dark) (2)
Collector emitter capacitance
VCE = 0
V
CCE
6
pF
COUPLER
Isolation test voltage (2)
Peak, 60 Hz
VIO
ICE = 2 mA, IF = 50 mA
VCE(sat)
Resistance, input output (2)
VIO = 500 V
RIO
Capacitance, input output
f = 1 MHz
CIO
Saturation voltage, collector emitter
5000
V
0.5
100
V
GΩ
0.6
pF
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
Document Number: 83725
Rev. 1.8, 07-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
133
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
(1)
TEST CONDITION
VCE = 10 V, IF = 10 mA
DC current transfer ratio
PART
SYMBOL
MIN.
TYP.
4N25
CTRDC
20
50
MAX.
UNIT
%
4N26
CTRDC
20
50
%
4N27
CTRDC
10
30
%
4N28
CTRDC
10
30
%
Note
(1) Indicates JEDEC registered values.
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
TEST CONDITION
SYMBOL
VCE = 10 V, IF = 10 mA, RL = 100 Ω
tr, tf
MIN.
TYP.
MAX.
UNIT
2
μs
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.5
1.3
NCTR - Normalized CTR
TA = - 55 °C
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 85 °C
0.8
0.7
0.1
1
10
100
IF - Forward Current (mA)
i4n25_01
NCTR - Normalized CTR
1.0
TA = 50 °C
0.5
NCTR(SAT)
NCTR
0.1
1
1.0
TA = 25 °C
0.5
NCTR(SAT)
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
1.0
TA = 70 °C
0.5
NCTR(SAT)
NCTR
NCTR
0.0
i4n25_02
1
10
100
IF - LED Current (mA)
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
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134
100
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) = 0.4 V
0
10
IF - LED Current (mA)
i4n25_03
Fig. 1 - Forward Voltage vs. Forward Current
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
0.0
NCTR - Normalized CTR
VF -Forward Voltage (V)
1.4
0.0
0.1
i4n25_04
1
10
100
IF - LED Current (mA)
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
1.5
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C
CTRCE(sat) VCE = 0.4 V
NCTRcb - Normalized CTRcb
NCTR - Normalized CTR
1.5
1.0
TA = 85 °C
0.5
NCTR(SAT)
NCTR
1
10
100
IF - LED Current (mA)
i4n25_05
25 °C
50 °C
70 °C
1
10
100
IF - LED Current (mA)
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
35
10
30
25
50 °C
20
70 °C
15
85 °C
25 °C
10
5
Normalized Photocurrent
ICE - Collector Current (mA)
0.5
i4n25_08
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
0
10
20
30
40
50
60
IF - LED Current (mA)
i4n25_06
Normalized to:
IF = 10 mA, TA = 25 °C
1
0.1
Nib, TA = - 20 °C
Nib, TA = 20 °C
Nib, TA = 50 °C
Nib, TA = 70 °C
0.01
0.1
0
i4n25_09
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
1
10
100
IF - LED Current (mA)
Fig. 9 - Normalized Photocurrent vs. IF and Temperature
105
1.2
70 °C
104
NhFE - Normalized hFE
ICEO - Collector Emitter (nA)
1.0
0.0
0.1
0.0
0.1
Normalized to:
VCB = 9.3 V, IF = 10 mA, TA = 25 °C
103
10
2
VCE = 10 V
101
Typical
100
10- 1
10- 2
- 20
i4n25_07
1.0
25 °C
- 20 °C
0.8
Normalized to:
IB = 20 µA, VCE = 10 V,
TA = 25 °C
0.6
0.4
0
20
40
60
80
100
Tamb- Ambient Temperature (°C)
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
Document Number: 83725
Rev. 1.8, 07-Jan-10
1
i4n25_10
10
100
1000
Ib - Base Current (µA)
Fig. 10 - Normalized Non-Saturated hFE vs.
Base Current and Temperature
For technical questions, contact: [email protected]
www.vishay.com
135
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
NhFE(sat) - Normalized Saturated hFE
with Base Connection
1.5
VCC = 5 V
Normalized to:
VCE = 10 V, Ib = 20 µA
TA = 25 °C
70 °C 50 °C
f = 10 kHz
DF = 50 %
1.0
25 °C
VO
- 20 °C
0.5
IF = 10 mA
VCE = 0.4 V
0.0
1
10
100
1000
i4n25_14
Ib - Base Current (µA)
i4n25_11
Fig. 11 - Normalized hFE vs. Base Current and Temperature
tPHL
2.0
100
1.5
10
tPLH
1
0.1
1
tPHL - Propagation Delay (µs)
IF = 10 mA, TA = 25 °C
VCC = 5.0 V, Vth = 1.5 V
i4n25_12
Fig. 14 - Switching Schematic
2.5
1000
tPLH- Propagation Delay (µs)
RL
1.0
100
10
RL - Collector Load Resistor (kΩ)
Fig. 12 - Propagation Delay vs. Collector Load Resistor
IF
tD
VO
tR
tPLH
VTH = 1.5 V
tPHL
tS
tF
i4n25_13
Fig. 13 - Switching Timing
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136
For technical questions, contact: [email protected]
Document Number: 83725
Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
PACKAGE DIMENSIONS in millimeters
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
1.2 ± 0.1
14771_2
6
5
4
1
2 3
4.5 ± 0.3
0.5 ± 0.1
2.8 ± 0.15
4.5 ± 0.3
0.25
7.62 to 9.5 typ.
PACKAGE MARKING
4N25
V YWW 24
21764-25
Document Number: 83725
Rev. 1.8, 07-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
137
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Revision: 02-Oct-12
1
Document Number: 91000
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