10 FZ062TA030SM P986D13 D1 14

10-FZ062TA030SM-P986D13
datasheet
flow PFC 0 CD
600 V / 30 A
Features
●
●
●
●
●
flow 0 12mm housing
High-efficient rectifier
High-efficient IGBT H5 + Stealth 2 Diode
Ultra-fast switching speed
Integrated capacitors
Thermistor
Schematic
Target applications
● SMPS
● Welding
Types
● 10-FZ062TA030SM-P986D13
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
650
V
28
A
90
A
57
W
PFC Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T s = 80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
T s = 80 °C
1
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
26
A
90
A
48
W
150
°C
650
V
17
A
20
A
33
W
175
°C
1600
V
46
A
280
A
390
A s
59
W
PFC Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j = T jmax
T s = 80°C
T j = T jmax
T s = 80°C
PFC Protection\ Current Transforme Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j = T jmax
T s = 80°C
T j = T jmax
T s = 80°C
Rectifier \ Shunt Protection Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
2
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
t p = 10 ms 50 Hz sine
T j = 150°C
T j = T jmax
T h = 80°C
2
Surge current capability
I t
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
150
°C
V MAX
1000
V
T op
-55…+125
°C
DC Link Capacitor
Maximum DC voltage
Operation Temperature
PFC Shunt
DC forward current
Power dissipation
Copyright Vincotech
IF
T c =25°C
22
A
P tot
T c =105°C
5
W
2
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
min. 12,7
mm
9,42
mm
Isolation Properties
Isolation voltage
V isol
DC Voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
t p = 2s
> 200
CTI
3
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,69
2,22
125
1,92
PFC Switch
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE = V CE
0,0003
15
30
25
V
V
Collec tor-emitter c ut-off current
I CES
0
650
25
40
µA
Gate-emitter leakage c urrent
I GES
20
0
25
120
nA
Internal gate resistance
Input capacitance
none
rg
2100
C ies
f = 1MHz
Reverse transfer capac itance
C res
Gate c harge
Qg
Ω
0
25
25
pF
7,7
15
520
30
25
70
nC
1,67
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
λ = 3,4 W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 16 Ω
R gon = 16 Ω
t d(off)
15/0
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 0,3 µC
Q rFWD = 0,8 µC
4
400
30
25
125
25
125
25
125
25
125
25
125
25
125
25
23
10
11
144
159
4
7
0,445
0,715
0,132
0,225
ns
mWs
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Unit
Typ
Max
25
2,34
2,8
125
2,01
PFC Diode
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
30
600
25
100
V
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
λ = 3,4 W /mK
1,46
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 2682 A/µs
15/0
di /dt = 2448 A/µs
400
30
E rec
(di rf/dt )max
25
125
25
125
25
125
25
125
25
125
18
28
16
45
0,269
0,790
0,046
0,100
4655
1857
A
ns
µC
mWs
A/µs
PFC Protection\ Current Transforme Protection Diode
Static
Forward voltage
VF
Reverse leakage c urrent
Ir
10
650
25
1,67
125
1,56
25
1,87
0,14
V
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
λ = 3,4 W /mK
2,87
K/W
Rectifier \ Shunt Protection Diode
Static
Forward voltage
Reverse leakage c urrent
30
VF
1600
Ir
25
1,16
125
1,11
25
1,3
20
150
1500
V
µA
Thermal
Thermal resistance junc tion to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
1,19
5
K/W
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Typ
Unit
Max
DC Link Capacitor
Capacitance
100
C
Tolerance
-10
nF
+10
%
PFC Shunt
R1 value
R
Temperature coeficient
tc
Internal heat resistance
Inductanc e
10
20 - 60
mΩ
50
ppm/K
R thi
13
K/W
L
3
nH
Thermistor
Rated resistance
25
R
Deviation of R100
ΔR/R
Power dissipation
P
100
R100 = 1486 Ω
Power dissipation constant
22
-12
kΩ
+14
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
6
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
100
I C (A)
I C (A)
100
80
80
60
60
40
40
20
20
0
0
0
1
2
tp =
250
µs
V GE =
15
V
3
T j:
4
V C E (V)
0
5
1
2
4
5
V C E (V)
25 °C
tp =
250
125 °C
Tj =
125
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
3
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
30
Z t h( jj--s)(K/W)
I C (A)
101
25
100
20
10-1
15
0,5
10
0,2
0,1
10-2
0,05
0,02
5
0,01
0,005
0
10-3
10-5
0
0
2
4
6
8
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R th(j-s) =
10-1
100
101
t p (s)
102
tp / T
1,67
K/W
IGBT thermal model values
Copyright Vincotech
7
R (K/W)
1,80E-01
τ (s)
1,06E+00
3,72E-01
1,72E-01
6,39E-01
5,52E-02
3,20E-01
1,27E-02
1,54E-01
3,03E-03
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G)
IGBT
I C = f(V CE)
I C (A)
100
V G E (V)
15
130V
12,5
520V
10
10
7,5
1
5
0,1
2,5
0
0,01
0
10
20
30
40
50
60
70
80
1
10
Q G (nC)
1000
V C E (V)
At
I C=
100
At
30
Copyright Vincotech
A
8
D =
single pulse
Ts =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F)
Z th(j-s) = f(t p)
90
101
Z t h( jj--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
75
100
60
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
15
10-2
0
0
1
2
3
10-4
4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,46
K/W
FWD thermal model values
Copyright Vincotech
9
R (K/W)
6,8400E-02
τ (s)
2,7070E+00
1,8520E-01
3,2380E-01
7,7650E-01
6,8840E-02
2,2980E-01
1,9350E-02
1,1460E-01
3,4610E-03
8,1930E-02
7,0190E-04
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Protection \ Current Transformer Protection Diode Characteristics
Typical forward characteristics
Prot. Diode
Transient thermal impedance as a function of pulse width Prot. Diode
Z th(j-s) = f(t p)
30
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F)
25
100
20
15
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
10
5
10-2
0
0
0,5
1
1,5
2
2,5
10-4
3
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
2,87
K/W
150 °C
Prot. Diode thermal model values
R (K/W)
6,5290E-02
Copyright Vincotech
10
τ (s)
3,9390E+00
1,4760E-01
4,4830E-01
1,3130E+00
5,9640E-02
7,3180E-01
1,3610E-02
4,0440E-01
2,7940E-03
2,1060E-01
5,3720E-04
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Rectifier \ Shunt Protection Diode Characteristics
Typical forward characteristics
Diode
I F = f(V F )
Z th(j-s) = f(t p)
90
101
Z t h(j
h(j--s) (K/W)
IF (A)
Diode
Transient thermal impedance as a function of pulse width
75
100
60
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
15
10-2
0
0
0,5
1
1,5
10-4
2
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,19
K/W
Diode thermal model values
R (K/W)
3,27E-02
τ (s)
9,47E+00
1,25E-01
7,59E-01
7,11E-01
1,23E-01
2,20E-01
3,75E-02
6,56E-02
5,63E-03
3,68E-02
8,27E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
11
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unction of collector current
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
1,6
E (mWs)
E (mWs)
1,6
Eon
1,2
Eon
1,2
E on
Eon
0,8
0,8
Eoff
0,4
Eo ff
0,4
E off
Eoff
0
0
0
10
20
30
40
50
60
0
I C (A)
25
With an induc tive load at
400
V
V CE =
15/0
V
V GE =
R gon =
16
Ω
R goff =
16
Ω
T j:
°C
10
20
30
125 °C
30
IC =
Figure 3.
FWD
40
50
25
With an inductive load at
400
V
V CE =
15/0
V
V GE =
T j:
60
R g ( Ω)
70
°C
125 °C
A
Figure 4.
FWD
Typical reverse recovered energy loss as a f unction of collector current
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(I c)
E rec = f(r g )
0,16
E (mWs)
E (mWs)
0,16
Erec
0,12
0,12
0,08
0,08
Erec
Erec
0,04
0,04
Erec
0
0
0
10
20
With an induc tive load at
400
V
V CE =
15/0
V
V GE =
R gon =
16
Copyright Vincotech
30
40
25
T j:
50
I C (A)
0
60
°C
10
20
With an inductive load at
400
V
V CE =
15/0
V
V GE =
125 °C
Ω
IC=
12
30
30
40
50
25
T j:
60
r g (Ω)
70
°C
125 °C
A
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
td(off )
t ( μs)
t ( μ s)
1
td(off )
0,1
0,1
td(on)
td(on)
tr
tr
tf
0,01
0,01
tf
0,001
0,001
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I C (A)
(A)
With an induc tive load at
125
°C
Tj=
400
V
V CE =
r g (Ω)
70
With an inductive load at
125
°C
Tj=
400
V
V CE =
V GE =
15/0
V
V GE =
R gon =
16
Ω
IC =
R goff =
16
Ω
Figure 7.
FWD
15/0
V
30
A
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,06
t rr (μs)
t rr (μs)
0,08
trr
0,05
trr
0,06
0,04
0,03
0,04
trr
0,02
0,02
trr
0,01
0
0
0
10
20
30
40
50
60
0
I C (A)
At
400
V
V GE =
15/0
V
R gon =
16
Ω
V CE=
Copyright Vincotech
25
T j:
10
20
30
40
50
60
70
R g on (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
13
400
V
15/0
V
30
A
25
T j:
°C
125 °C
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
1,2
1
Q r (μ C)
Q r (µC)
Typical recovered charge as a f unction of collector current
Qr
0,8
0,9
Qr
0,6
0,6
0,4
Qr
0,3
Qr
0,2
0
At
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I C (A)
At
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
25
T j:
°C
At
400
VCE=
125 °C
V GE =
15/0
V
30
A
I C=
Figure 11.
FWD
V
25
T j:
125 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
40
70
R g o n (Ω)
°C
I R M (A)
I R M (A)
60
I RM
50
30
40
30
20
I RM
20
IRM
10
10
0
0
0
At
I RM
10
20
400
V
V GE =
15/0
V
R gon =
16
Ω
V CE =
Copyright Vincotech
30
40
25
T j:
50
I C (A)
0
60
10
20
30
40
50
60
70
R go n (Ω)
°C
At
125 °C
V CE =
V GE =
IC=
14
400
V
15/0
V
30
A
25
T j:
°C
125 °C
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
10000
7000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
di r r /dt
6000
diF / dt
di r r/ dt
8000
5000
6000
4000
3000
4000
2000
2000
1000
0
0
0
10
20
30
40
50
0
60
10
20
30
40
50
At
V CE =
400
V
V GE =
15/0
V
R gon =
16
Ω
25
T j:
°C
At
125 °C
V CE =
V GE =
I C=
Figure 15.
60
70
R g on (Ω)
I C (A)
400
V
15/0
V
30
A
25
T j:
°C
125 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
70
I C MAX
I c CHIP
60
50
M ODULE
40
Ic
30
V CE MAX
20
10
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
16
Ω
R goff =
16
Ω
Tj =
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15
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Definitions
General conditions
=
125 °C
=
16 Ω
Tj
R gon
R goff
Figure 1.
=
IGBT
16 Ω
Figure 2.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
200
125
tdoff
%
%
IC
100
150
VCE 90%
VGE 90%
75
VCE
100
IC
VGE
50
VGE
tdon
tEoff
50
25
IC 1%
VGE 10%
VCE
0
-25
-0,07
-0,01
0,05
0,11
0,17
0,23
-50
2,95
0,29
t (µs)
VCE 3%
IC 10%
tEon
0
3
3,05
3,1
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
400
V
V C (100%) =
400
V
I C (100%) =
30
A
I C (100%) =
30
A
t doff =
t Eoff =
0,159
0,197
µs
µs
t don =
t Eon =
0,023
0,148
µs
µs
Figure 3.
IGBT
t (µs)
Figure 4.
Turn-of f Swit ching Wavef orms & def init ion of t f
3,2
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
125
200
fitted
%
100
3,15
%
VCE
IC
IC
150
IC 90%
75
VCE
100
IC 60%
IC 90%
50
tr
IC 40%
50
25
IC10%
0
-25
0,07
IC 10%
0
tf
0,09
0,11
0,13
0,15
-50
0,17
3
t (µs)
3,009
3,018
3,027
3,045
3,054
t (µs)
V C (100%) =
400
V
V C (100%) =
400
I C (100%) =
30
A
I C (100%) =
30
A
tf=
0,007
µs
tr =
0,011
µs
Copyright Vincotech
3,036
16
V
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Definitions
Figure 5.
IGBT
Figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
200
%
IC 1%
Eoff
100
%
Poff
Pon
150
75
Eon
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEon
tEoff
-25
-0,07
-0,01
0,05
0,11
-50
2,97
0,17
3,01
3,05
3,09
P off (100%) =
12,02
kW
P on (100%) =
12,02
kW
E off (100%) =
0,23
mJ
E on (100%) =
0,72
mJ
t Eoff =
0,20
µs
t Eon =
0,15
µs
Figure 7.
3,13
3,17
t ( µs)
t ( µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
fitted
0
IRRM 10%
Vd
-50
IRRM 90%
IRRM 100%
-100
-150
3
3,02
3,04
3,06
3,08
t (µs)
V d (100%) =
400
V
I d (100%) =
30
A
I RRM (100%) =
-28
A
t rr =
0,045
µs
Copyright Vincotech
17
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
PFC Switching Definitions
Figure 8.
FWD
Figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Qrr
Id
100
tErec
75
tQrr
50
Erec
100
50
0
25
Prec
-50
0
-100
3
3,03
3,06
3,09
-25
3,12
3
t (µs)
3,03
3,06
3,12
t (µs)
I d (100%) =
30
A
P rec (100%) =
12,02
kW
Q rr (100%) =
0,79
µC
E rec (100%) =
0,10
mJ
t Qrr =
0,09
µs
t Erec =
0,09
µs
Copyright Vincotech
3,09
18
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Ordering Code & Marking
Ordering Code
10-FZ062TA030SM-P986D13
Version
without thermal paste with Solder pins 12mm housing
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
Datamatrix
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-TTTTTTVV
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
33,5
0
Therm1
2
33,5
2,8
Therm2
3
29,5
2,8
S1sh1
4
29,5
0
S2sh1
5
26,7
0
DC-
6
23,9
0
DC-
Not assembled
7
8
9
14,85
14,05
0
S25
13,35 ST1
10
12,05
11
12
9,5
13
6,7
12,05
PFC2-
14
15
3,9
2,2
0
13,35
S27
ST2
16
1,1
0
G27
17
0
22,7
PFC2
18
7,1
22,7
PFC+
19
7,1
20,2
PFC+
20
14,2
22,7
PFC1
21
20,7
22,7
G34
22
23,5
22,7
DC+
23
26
22,7
DC+
24
28,8
22,7
G32
25
33,5
18,55
ACIn1
26
33,5
16,05
ACIn1
27
28
33,5
31
8,7
8,7
ACIn2
ACIn2
0
G25
12,05
PFC1Not assembled
Copyright Vincotech
19
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T25, T27
IGBT
650 V
30 A
PFC Switch
D25, D27
FWD
600 V
30 A
PFC Diode
D45, D47
FWD
650 V
10 A
PFC Sw. Protection Diode
D31, D32, D33, D34
Rectifier
1600 V
50 A
Rectifier Diode
D48
FWD
1600 V
50 A
Shunt Protection Diode
D26, D28
FWD
650 V
10 A
Current Transformer Protection Diode
SH1
Shunt
C25, C27
Capacitor
Rt
NTC
Copyright Vincotech
Comment
Shunt Resistor
1000 V
DC Link Capacitance
Thermistor
20
08 Mar. 2016 / Revision 1
10-FZ062TA030SM-P986D13
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
135
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
General datasheet
General datasheet for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website.
Document No.:
Date:
10-FZ062TA030SM-P986D13-D1-14
08 Mar. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
08 Mar. 2016 / Revision 1
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