10-FZ07NA075SM-P926F58 datasheet flow NPC 0 650 V / 75 A Features ● ● ● ● ● flow 0 12mm housing High Efficiency three-level half-bridge High efficiency IGBT Neutral point-Clamped inverter Clip-In PCB mounting Low Inductance Layout Schematic Target applications ● Solar inverters ● UPS ● Power supplies Types ● 10-FZ07NA075SM-P926F58 Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 57 A 225 A 97 W Buck Switch\Out. Boost Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s = 80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech T s = 80 °C 1 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 59 A 150 A 78 W Buck Diode\Out. Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T j = T jmax T s = 80°C Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax 175 °C V RRM 650 V 65 A 150 A 85 W T j = T jmax T s = 80°C Out. Boost Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current IF T j = T jmax T s = 80°C Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min. 12,7 mm 9,75 mm T j = T jmax T s = 80°C Module Properties Thermal Properties Isolation Properties Isolation voltage V isol DC Voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech tp = 2 s > 200 CTI 2 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Unit Min Typ Max 3,3 4 4,7 25 1,67 2,22 125 1,84 150 1,89 Buck Switch Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE = V CE 0,00075 25 15 75 V V Collec tor-emitter c ut-off current I CES 0 650 25 40 µA Gate-emitter leakage c urrent I GES 20 0 25 120 nA rg none Input capacitance C ies 4300 Output capacitance C oes Reverse transfer capac itance C res Gate c harge Qg Internal gate resistance f = 1 MHz 0 25 25 75 Ω pF 16 15 520 75 25 166 nC 0,98 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK IGBT Switching Turn-on delay time t d(on) R goff = 4 Ω Rise time Turn-off delay time tr R gon = 4 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 2,4 µC Q rFWD = 4,8 µC Q rFWD = 5,4 µC 3 350 75 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 39 39 39 12 14 15 102 115 119 5 8 8 0,799 1,170 1,223 0,314 0,534 0,592 ns mWs 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 25 1,53 1,77 125 1,49 150 1,47 Buck Diode Static Forward voltage Reverse leakage c urrent 75 VF 25 650 Ir V 3,8 µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 1,23 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 4857 A/µs di /dt = 5610 A/µs ±15 di /dt = 5462 A/µs E rec (di rf/dt )max 4 350 75 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 60 79 84 72 121 134 2,434 4,832 5,418 0,484 1,031 1,126 708 814 959 A ns µC mWs A/µs 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Typ Unit Max Out. Boost Switch Static Gate-emitter threshold voltage Collec tor-emitter saturation voltage V GE(th) V GE = V CE 0,00075 25 15 V CEsat 75 4 4,7 25 3,3 1,67 2,22 125 1,84 150 1,89 V V Collec tor-emitter c ut-off current I CES 0 650 25 40 µA Gate-emitter leakage c urrent I GES 20 0 25 120 nA rg none Input capacitance C ies 4300 Output capacitance C oes Reverse transfer capac itance C res Gate c harge Qg Internal gate resistance f = 1 MHz 0 25 25 75 Ω pF 16 15 520 75 25 166 nC 0,98 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK IGBT Switching Turn-on delay time t d(on) R goff = 4 Ω Rise time Turn-off delay time tr R gon = 4 Ω t d(off) ±15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf E on Q rFWD = 2,5 µC Q rFWD = 4,7 µC Q rFWD = 5,3 µC E off 5 350 75 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 40 40 40 13 15 15 105 120 124 5 10 13 0,710 0,987 1,047 0,332 0,597 0,647 ns mWs 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Unit Typ Max 25 1,53 1,77 125 1,49 150 1,47 Out. Boost Diode Static Forward voltage Reverse leakage c urrent 75 VF 25 650 Ir V 3,8 µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 1,23 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 5868 A/µs di /dt = 5310 A/µs ±15 di /dt = 4117 A/µs 350 75 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 56 73 77 74 114 124 2,450 4,736 5,336 0,607 1,222 1,380 498 431 444 A ns µC mWs A/µs Out. Boost Inverse Diode Static Forward voltage Reverse leakage c urrent 75 VF 650 Ir 25 1,46 125 1,42 150 1,40 25 1,82 V 0,9 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-change material ʎ = 3,4 W /mK 1,12 6 K/W 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj[°C] Min Typ Unit Max Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P R100=1484 Ω 100 Power dissipation constant 22 -5 kΩ 5 % 25 5 mW 25 1,5 mW/K B-value B(25/50) Tol. ±1% 25 3962 K B-value B(25/100) Tol. ±1% 25 4000 K Vincotech NTC Reference Copyright Vincotech I 7 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switch\Out. Boost Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 200 I C (A) I C (A) 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V 25 T j: °C tp = 250 125 °C Tj = 150 150 °C V GE from 8 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 75 Z t h( jj--s)(K/W) I C (A) 101 60 100 45 10-1 30 0,5 0,2 0,1 10-2 0,05 15 0,02 0,01 0,005 0 10-3 0 0 1 2 3 4 5 6 10-5 7 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V 25 T j: °C D = 125 °C Copyright Vincotech 10 101 t p (s) 102 tp / T R th(j-s) = 150 °C 10-1 0,98 K/W IGBT thermal model values 8 R (K/W) 7,21E-02 τ (s) 2,25E+00 1,46E-01 3,32E-01 4,74E-01 6,42E-02 1,76E-01 1,63E-02 6,17E-02 3,99E-03 4,63E-02 3,57E-04 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switch\Out. Boost Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) I C (A) 1000 V G E (V) 15 130V 12,5 100 520V 10 10 7,5 1 5 0,1 2,5 0 0,01 0 20 40 60 80 100 120 140 160 1 180 10 Q G (nC) 1000 V C E (V) At I C= 100 At 75 Copyright Vincotech A 9 D = single pulse Th = 80 ºC V GE = Tj = ±15 T jmax V ºC 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Diode\Out. Boost Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 101 200 100 150 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10-1 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs 25 T j: 10-1 100 101 102 t p (s) °C 125 °C D= tp / T R th(j-s) = 1,23 K/W 150 °C FWD thermal model values R (K/W) Copyright Vincotech 10 8,04E-02 τ (s) 2,68E+00 1,74E-01 2,85E-01 6,28E-01 6,23E-02 2,05E-01 1,65E-02 8,90E-02 4,15E-03 4,76E-02 4,96E-04 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Inverse Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 101 200 100 150 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,12 K/W 150 °C FWD thermal model values R (K/W) 6,8840E-02 τ (s) 4,0940E+00 1,6010E-01 8,4260E-01 3,6790E-01 1,3000E-01 3,1440E-01 4,0920E-02 1,5680E-01 8,7800E-03 4,7270E-02 1,1130E-03 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 11 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E ( mWs) E (mWs) 2,5 Eon 2 3 2,5 Eon Eon Eon 2 Eo n 1,5 Eo n 1,5 Eoff 1 Eoff 1 E o ff 0,5 Eoff Eoff Eo ff 0,5 0 0 0 25 50 75 100 125 150 0 I C (A) 25 With an induc tive load at 350 V V CE = ±15 V V GE = R gon = 4 Ω R goff = 4 Ω °C 4 6 8 150 °C 75 IC = Figure 3. FWD 10 T j: 14 16 R g ( Ω) 125 °C 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 2 1,6 E (mWs) 18 °C A Typical reverse recovered energy loss as a f unction of collector current E (mWs) 12 25 With an inductive load at 350 V V CE = ±15 V V GE = 125 °C T j: 2 Erec 1,5 1,2 Erec Erec Erec 0,8 1 Erec 0,4 0,5 Erec 0 0 0 25 50 With an induc tive load at 350 V V CE = ±15 V V GE = R gon = 4 Copyright Vincotech 75 100 25 T j: 125 I C (A) 0 150 °C 2 4 6 With an inductive load at 350 V V CE = ±15 V V GE = 125 °C 150 °C Ω IC= 12 75 8 10 12 25 T j: 14 16 r g (Ω) 18 °C 125 °C 150 °C A 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr tr 0,01 0,01 tf tf 0,001 0,001 0 25 50 75 100 125 150 0 I C (A) (A) With an induc tive load at 150 °C Tj= 350 V V CE = 2 4 6 8 10 12 14 16 18 With an inductive load at 150 °C Tj= 350 V V CE = V GE = ±15 V V GE = R gon = 4 Ω IC = R goff = 4 Ω Figure 7. FWD ±15 V 75 A Figure 8. FWD t rr = f(I C) t rr = f(R gon) 0,2 0,2 t rr (μs) Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t r r (μs) Typical reverse recovery t ime as a f unction of collector current trr trr trr 0,15 0,15 trr trr 0,1 0,1 0,05 0,05 0 trr 0 0 25 50 75 100 125 150 0 I C (A) At r g (Ω) 350 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 25 T j: 2 4 6 8 10 12 14 16 18 R g on (Ω) °C At V CE = 125 °C V GE = 150 °C IC= 13 350 V ±15 V 75 A 25 T j: °C 125 °C 150 °C 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) Q r (μ C) 8 Q r (µC) Qr Qr 6 Qr 5 Qr 6 4 Qr 4 3 Qr 2 2 1 0 At 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 75 A 25 T j: 16 18 R g o n (Ω) °C 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 100 I R M (A) I R M (A) 120 IRM 80 IR M 90 IRM 60 60 40 IRM IRM 30 20 IRM 0 0 At 25 50 350 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 75 100 25 T j: 125 I C (A) 0 150 0 °C At 2 V CE = 125 °C V GE = 150 °C IC= 14 4 6 350 V ±15 V 75 A 8 10 12 25 T j: 14 16 R g o n (Ω)18 °C 125 °C 150 °C 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 10000 8000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt di r r/ dt diF / dt 8000 6000 6000 4000 4000 2000 2000 0 0 0 25 50 75 100 125 0 150 2 4 6 8 10 12 14 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 75 A 25 T j: 16 18 R g o n (Ω) °C 125 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 175 I C MAX I c CHIP 150 125 M ODULE 100 Ic 75 V CE MAX 50 25 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 15 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Definitions General conditions = 125 °C = 4Ω Tj R gon R goff Figure 1. = IGBT 4Ω Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 150 250 % % tdoff IC 200 100 VGE 90% VCE 90% IC VGE 50 150 VCE 100 tEoff tdon IC 1% VCE 50 0 VGE VGE 10% 0 -50 -0,02 0,02 0,06 0,1 0,14 0,18 -50 2,94 0,22 2,98 IC 10% 3,02 3,06 VCE 3% tEon 3,1 3,14 t (µs) 0 V V GE (100%) = 20 V V C (100%) = 350 V I C (100%) = 74 A t doff = t Eoff = 0,115 0,160 µs µs V GE (0%) = Figure 3. 3,18 3,22 t (µs) 0 V V GE (100%) = 20 V V C (100%) = 350 V I C (100%) = 74 A t don = t Eon = 0,039 0,143 µs µs V GE (0%) = IGBT Figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 250 150 % % 125 200 fitted IC 100 IC 90% 150 75 IC 60% 100 VCE IC 90% 50 tr IC 40% 50 25 VCE IC10% IC 0 IC 10% 0 tf -25 0,09 0,105 0,12 0,135 0,15 0,165 0,18 -50 3,02 0,195 t ( µs) V C (100%) = 350 3,04 3,06 3,08 3,1 V C (100%) = 350 3,14 3,16 3,18 V I C (100%) = 74 A I C (100%) = 74 A tf= 0,008 µs tr = 0,014 µs Copyright Vincotech 3,12 t (µs) V 16 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Definitions Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 125 % % Poff Eoff 100 Pon Eon 100 75 75 IC 1% 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -0,01 0,03 0,07 0,11 0,15 0,19 -25 2,98 0,23 3,02 3,06 3,1 P off (100%) = 26,01 kW P on (100%) = 26,01 kW E off (100%) = 0,53 mJ E on (100%) = 1,17 mJ t Eoff = 0,16 µs t Eon = 0,14 µs Figure 7. 3,14 3,18 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 0 Vd fitted IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 3,04 3,06 3,08 3,1 3,12 3,14 3,16 3,18 3,2 3,22 t (µs) V d (100%) = 350 V I d (100%) = 74 A I RRM (100%) = -79 A t rr = 0,121 µs Copyright Vincotech 17 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Buck Switching Definitions Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 tQrr 50 tErec 75 0 50 -50 25 -100 0 Prec -150 3,03 3,08 3,13 3,18 3,23 3,28 -25 3,03 3,33 t (µs) 3,08 3,13 3,18 3,28 3,33 t (µs) I d (100%) = 74 A P rec (100%) = 26,01 kW Q rr (100%) = 4,83 µC E rec (100%) = 1,03 mJ t Qrr = 0,24 µs t Erec = 0,24 µs Copyright Vincotech 3,23 18 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 2 E ( mWs) E (mWs) Typical swit ching energy losses as a f unction of collector current Eon 3 2,5 Eon Eon 1,5 Eon Eo n 2 Eo n Eoff Eoff 1 1,5 1 E off 0,5 Eoff Eoff 0,5 Eo ff 0 0 0 25 50 75 100 125 150 0 I C (A) 25 With an induc tive load at 350 V V CE = ±15 V V GE = R gon = 4 Ω R goff = 4 Ω °C 4 6 8 150 °C 75 IC = Figure 3. FWD 10 T j: 14 16 R g ( Ω) 125 °C 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) E (mWs) 2,5 Erec 18 °C A Typical reverse recovered energy loss as a f unction of collector current E (mWs) 12 25 With an inductive load at 350 V V CE = ±15 V V GE = 125 °C T j: 2 1,6 2 Erec 1,2 Erec Erec 1,5 0,8 Erec 1 Erec 0,4 0,5 0 0 0 25 50 With an induc tive load at 350 V V CE = ±15 V V GE = R gon = 4 Copyright Vincotech 75 100 25 T j: 125 I C (A) 0 150 °C 2 4 6 With an inductive load at 350 V V CE = ±15 V V GE = 125 °C 150 °C Ω IC= 19 75 8 10 12 25 T j: 14 16 r g (Ω) 18 °C 125 °C 150 °C A 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr tr tf tf 0,01 0,01 0,001 0,001 0 25 50 75 100 125 150 0 I C (A) (A) With an induc tive load at 150 °C Tj= 350 V V CE = 2 4 6 8 10 12 14 16 r g (Ω) 18 With an inductive load at 150 °C Tj= 350 V V CE = V GE = ±15 V V GE = R gon = 4 Ω IC = R goff = 4 Ω Figure 7. FWD ±15 V 75 A Figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,2 0,2 t r r (μs) t rr (μs) Typical reverse recovery t ime as a f unction of collector current trr trr 0,15 trr 0,15 trr trr 0,1 0,1 trr 0,05 0,05 0 0 0 25 50 75 100 125 150 0 I C (A) At 350 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 25 T j: 2 4 6 8 10 12 14 16 18 R g on (Ω) °C At V CE = 125 °C V GE = 150 °C IC= 20 350 V ±15 V 75 A 25 T j: °C 125 °C 150 °C 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) Q r (µC) Q r (μ C) 8 Qr Qr 6 Qr 5 Qr 6 4 4 3 Qr Qr 2 2 1 0 At 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C VCE= At 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 75 A 25 T j: 16 18 R g o n (Ω) °C 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 100 I R M (A) I R M (A) 120 I RM IR M 80 90 IRM 60 60 IRM 40 IRM 30 20 0 0 At IRM 25 50 350 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 75 100 25 T j: 125 I C (A) 0 150 0 °C At 2 V CE = 125 °C V GE = 150 °C IC= 21 4 6 350 V ±15 V 75 A 8 10 12 25 T j: 14 16 R g o n (Ω)18 °C 125 °C 150 °C 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 8000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt 8000 di F / dt di r r/ dt 6000 6000 4000 4000 2000 2000 0 0 0 25 50 75 100 125 0 150 2 4 6 8 10 12 14 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 T j: °C At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 75 A 25 T j: 16 18 R g o n (Ω) °C 125 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 175 I C MAX I c CHIP 150 125 M ODULE 100 Ic 75 V CE MAX 50 25 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 22 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Definitions General conditions = 25 °C = 4Ω Tj R gon R goff Figure 1. = IGBT 4Ω Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 200 200 IC % % 150 150 tdoff VCE 100 VGE 90% V GE 100 VCE 90% VGE tdon IC 50 50 tEoff IC 1% VCE VGE 10% 0 -50 -0,02 0,02 0,06 0,1 0,14 0,18 tEon -50 2,94 0,22 VCE 3% IC 10% 0 2,98 3,02 3,06 3,1 3,14 t (µs) 0 V V GE (0%) = 0 V V GE (100%) = 20 V V GE (100%) = 20 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 75 A I C (100%) = 75 A t doff = t Eoff = 0,120 0,159 µs µs t don = t Eon = 0,040 0,131 µs µs Figure 3. 3,18 3,22 t (µs) V GE (0%) = IGBT Figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 200 200 % % 150 150 fitted IC VCE 100 100 IC 90% IC 90% tr IC 60% IC 40% 50 VCE tf 0 -50 0,09 0,105 0,12 0,135 0,15 50 IC10% IC 10% IC 0 0,165 0,18 -50 3,02 0,195 t ( µs) 3,04 3,06 3,08 3,1 350 V V C (100%) = 350 I C (100%) = 75 A I C (100%) = 75 A tf= 0,009 µs tr = 0,015 µs Copyright Vincotech 3,12 3,14 3,16 t (µs) V C (100%) = 23 V 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Definitions Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 125 % % Poff Eoff 100 75 Eon Pon 100 75 IC 1% 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -0,01 0,03 0,07 0,11 0,15 0,19 -25 2,98 0,23 3,02 3,06 3,1 P off (100%) = 26,12 kW P on (100%) = 26,12 kW E off (100%) = 0,60 mJ E on (100%) = 0,99 mJ t Eoff = 0,16 µs t Eon = 0,13 µs Figure 7. 3,14 3,18 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 0 Vd fitted IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 3,02 3,06 3,1 3,14 3,18 3,22 t (µs) V d (100%) = 350 V I d (100%) = 75 A I RRM (100%) = -73 A t rr = 0,114 µs Copyright Vincotech 24 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Out. Boost Switching Definitions Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 tErec 75 tQrr 50 50 0 25 Prec -50 0 -100 3,03 3,08 3,13 3,18 3,23 3,28 -25 3,03 3,33 t (µs) 3,08 3,13 3,18 3,28 3,33 t (µs) I d (100%) = 75 A P rec (100%) = 26,12 kW Q rr (100%) = 4,74 µC E rec (100%) = 1,22 mJ t Qrr = 0,23 µs t Erec = 0,23 µs Copyright Vincotech 3,23 25 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Ordering Code & Marking Version without thermal paste 12mm housing with solder pins NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL Vinco LLLLL SSSS Ordering Code 10-FZ07NA075SM-P926F58 Text Datamatrix Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin Pin table X Y Function 1 33,6 0 G2 2 30,8 0 S2 3 22 0 -DC 4 19,2 0 -DC 5 10,1 0 GND 6 2,8 0 S4 7 0 0 G4 8 0 7,1 Line 9 0 9,9 Line 10 0 12,7 Line 11 12 0 0 15,5 22,6 Line G3 13 2,8 22,6 S3 14 10,1 22,6 GND 15 19,2 22,6 +DC 16 22 22,6 +DC 17 30,8 22,6 S1 18 33,6 22,6 G1 19 33,6 14,8 NTC1 20 33,6 8,2 NTC2 21 22 Not assembled Not assembled Copyright Vincotech 26 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Pinout Identification ID Component Voltage Current Function T1,T2 IGBT 650 V 75 A Buck Switch D5,D6 FWD 650 V 75 A Buck Diode T3,T4 IGBT 650 V 75 A Out. Boost Switch D1,D2 FWD 650 V 75 A Out. Boost Diode D3,D4 FWD 650 V 75 A Out. Boost Inverse Diode T NTC Copyright Vincotech Comment Thermistor 27 24 Feb. 2016 / Revision 1 10-FZ07NA075SM-P926F58 datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. Document No.: Date: 10-FZ07NA075SM-P926F58-D1-14 24 Feb. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 28 24 Feb. 2016 / Revision 1