10 F107ZAA060SM L515B19 T1 14

10-F107ZAA060SM-L515B19
target datasheet
flow RPI 1
650 V / 60 A
Features
flow 1 17mm housing
● High integration level of Rectifier, PFC and Inverter
● High efficiency input rectifier
● Dual PFC with high efficiency, fast IGBT H5 +
ultra-fast Si diode
● High efficiency H-Bridge inverter with fast IGBT H5
● Temperature sensor
Schematic
Target applications
● Welding
● Charger
Types
● 10-F107ZAA060SM-L515B19
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Conditions
Symbol
Value
Unit
1600
V
53
A
490
A
Rectifier Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
2
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
2
Surge current capability
I t
t p = 10 ms 50 Hz sine
T j = 150°C
1200
A s
Total power dissipation
P tot
T j = T jmax
T h = 80°C
86
W
Maximum Junction Temperature
T jmax
150
°C
Copyright Vincotech
1
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
TParameter
j=
Condition
Symbol
Value
Unit
650
V
43
A
150
A
84
W
PFC Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Value
Unit
650
V
29
A
180
A
52
W
175
°C
Value
Unit
650
V
17
A
20
A
33
W
175
°C
Parameter
T S=80°C
Conditions
Symbol
PFC Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Conditions
Symbol
C. T. Protection Diode
Peak Repetitive Reverse Voltage
DC forward current
V RRM
IF
Repetitive peak forward current
I FRM
Power dissipation
P tot
Maximum Junction Temperature
T jmax
Copyright Vincotech
T j=T jmax
T j=T jmax
2
T h=80°C
T h=80°C
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Parameter
Condition
Symbol
Value
Unit
650
V
50
A
225
A
84
W
H-Bridge Switch Lo/Hi Side
Collector-emitter voltage
V CES
Collector current
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Value
Unit
650
V
28
A
80
A
55
W
175
°C
Parameter
Symbol
T S =80 °C
Conditions
H-Bridge Diode Lo/Hi Side
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
Parameter
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
T jmax
Conditions
Value
Unit
V MAX
500
V
T op
-55…+125
°C
Symbol
DC Capacitor
Maximum DC voltage
Operation Temperature
Copyright Vincotech
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14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Parameter
Conditions
Symbol
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
7,74
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
t p=2s
>200
CTI
4
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Characteristic Values
Rectifier Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,07
1,21
125
1,13
Static
Forward voltage
25
VF
V
150
Reverse leakage current
25
1600
Ir
50
150
1100
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
0,82
K/W
Value
Unit
PFC Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
I C [A]
T j[ °C]
Min
Typ
Max
3,3
4
4,7
1,82
2,22
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
Collec tor-emitter saturation voltage
V CEsat
0,0005
25
125
25
15
50
125
1
2,00
V
V
150
Collec tor-emitter cut-off c urrent
I CES
0
650
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
25
40
125
25
120
125
rg
none
Input capacitance
C ies
3000
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
f=1 MHz
0
25
25
50
µA
nA
Ω
pF
11
15
Qg
520
50
25
120
nC
1,13
K/W
Thermal
Thermal resistanc e junction to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
5
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
PFC Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,46
2,6
125
2,03
Static
Forward voltage
30
VF
V
150
Reverse leakage current
25
665
Ir
10
150
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
1,83
K/W
Value
Unit
C. T. Protection Diode
Parameter
Conditions
Symbol
V r [V] I F [A] T j [°C]
Min
Typ
Max
25
1,67
1,87
125
1,56
Static
Forward voltage
10
VF
V
150
Reverse leakage current
650
Irm
25
0,14
150
µA
Thermal
Thermal resistanc e junction to sink
Copyright Vincotech
Rth(j-s)
phase-c hange
material
ʎ =3,4W/mK
2,87
6
K/W
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
H-Bridge Switch Lo/Hi Side
Parameter
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A] T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,67
2,22
125
1,84
150
1,89
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
Collec tor-emitter cut-off c urrent
Gate-emitter leakage current
Internal gate resistance
V GE=V CE
0,00075
15
0
I CES
20
I GES
75
25
125
25
650
40
0
120
125
rg
none
Input capacitance
C ies
4300
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
f=1 MHz
0
V
125
25
25
µA
nA
Ω
75
25
V
pF
16
15
Qg
520
75
25
166
nC
1,14
K/W
Value
Unit
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
H-Bridge Diode Lo/Hi Side
Parameter
Symbol
Conditions
V r [V] I F [A] T j [°C]
Min
Typ
Max
1,35
1,77
Static
25
Forward voltage
40
VF
125
V
150
Reverse leakage current
650
Ir
25
2,1
150
µA
Thermal
Thermal resistanc e junction to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
1,73
7
K/W
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
DC Capacitor
Parameter
Symbol
Conditions
Value
T j[°C]
Capacitance
Min
Typ
Unit
Max
100
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
22
-12
kΩ
+12
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
8
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing
Ordering Code
10-F107ZAA060SM-L515B19
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L515B19
in packaging barcode as
L515B19
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
52,9
0
G13
30
49,8
12,9
Function
DC-Inv2
2
49,9
0
S13
31
52,9
12,9
DC-Inv2
DC-Inv1
3
41,9
0
Ph2
32
52,9
15,9
4
39,2
0
Ph2
33
41,8
14,4
DC+Inv
5
36,2
0
S14
34
39,1
14,4
DC+Inv
6
33,2
0
G14
35
29,2
9,2
PFC2-
7
22
0
PFC+
36
15
9,2
PFC1-
8
22
3,5
PFC+
37
25
17,4
PFC2in2
9
13,4
0
DC+Rect
38
16,5
17
PFC1in2
10
10,7
0
11
2,7
0
DC+Rect
DC-Rect
39
40
25
17
20,9
20,5
PFC2in1
PFC1in1
12
0
0
DC-Rect
13
0
13
ACIn1
14
0
15,7
ACIn1
15
0
23,7
ACIn2
16
0
26,4
ACIn2
17
7,7
28,8
Therm1
18
10,7
28,8
Therm2
19
14,6
28,8
S25
20
17,6
28,8
G25
21
20,6
28,8
G27
22
23,6
28,8
S27
23
33,2
28,8
G12
24
36,2
28,8
S12
25
39,2
28,8
Ph1
26
41,9
28,8
Ph1
27
49,9
28,8
S11
28
52,9
28,8
29
49,8
15,9
G11
DC-Inv1
Copyright Vincotech
9
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T25,T27
IGBT
650V
50A
PFC Switch
D25,D27
FWD
650V
30A
PFC Diode
D26, D28
FWD
650V
10A
C.T. Protection Diode
T11, T13 / T12, T14
IGBT
650V
75A
H-Bridge Switch Lo/Hi Side
D12, D14 / D11, D13
FWD
650V
40A
H-Bridge Diode Lo/Hi Side
D31, D32, D33, D34
Rectifier
1600V
50A
Rectifier Diode
C1,C2
Capacitor
500V
-
DC Capacitor
Rt
NTC
-
-
Thermistor
Copyright Vincotech
10
Comment
14 Aug. 2015 / Revision 1
10-F107ZAA060SM-L515B19
target datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
10-F107ZAA060SM-L515B19-T1-14
14 Aug. 2015
Modification:
Pages
Product status definition
Datasheet Status
Product Status
Target
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
11
14 Aug. 2015 / Revision 1
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