10 FY074PA050SM M582F38 D2 14

10-FY074PA050SM-M582F38
datasheet
flow PACK 1
650 V / 50 A
Features
●
●
●
●
●
flow 1 12mm housing
650V IGBT H5 and 650V Stealth Si diode
High-efficiency
Ultra-fast switching frequency
Integrated temperature sensor
Low inductance layout
Schematic
Target applications
● Solar Inverters
● Power Supply
● Inverter based welding
Types
● 10-FY074PA050SM-M582F38
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
650
V
43
A
150
A
84
W
H-bridge Switch
Collector-emitter voltage
Collector current
V CES
IC
T j=T jmax
T S=80°C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j=T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
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1
T S=80°C
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
29
A
180
A
52
W
175
°C
H-bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
Module Properties
Parameter
Conditions
Symbol
Value
Unit
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
8,47
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
Creepage distance
Clearance
Comparative Tracking Index
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t p=2s
>200
CTI
2
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Characteristic Values
H-bridge Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
1,82
2,22
Static
Gate-emitter threshold voltage
V GE(th)
V GE=V CE
0,0005
25
125
25
Collec tor-emitter saturation voltage
15
V CEsat
50
Collec tor-emitter c ut-off current
I CES
0
650
Gate-emitter leakage c urrent
I GES
20
0
1
125
2,00
150
-
25
40
120
125
rg
none
Input capacitance
C ies
3000
Output capacitance
C oes
Reverse transfer capac itance
C res
Internal gate resistance
Gate c harge
f=1 MHz
0
V
125
25
25
25
50
V
µA
nA
Ω
pF
11
15
Qg
520
50
25
120
nC
1,13
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 8 Ω
Rise time
Turn-off delay time
tr
R gon = 8 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
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Q rFWD = 0,8 µC
Q rFWD = 1,8 µC
Q rFWD = 2,2 µC
3
300
50
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
59
60
60
9
11
11
64
74
76
4
8
9
0,412
0,516
0,555
0,170
0,303
0,337
ns
mWs
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,46
2,6
125
2,03
150
-
Static
Forward voltage
Reverse leakage c urrent
30
VF
25
665
Ir
V
10
150
-
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,83
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 4872 A/µs
di /dt = 4560 A/µs ±15
di /dt = 4066 A/µs
300
50
E rec
(di rf/dt )max
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
39
47
49
20
100
117
0,783
1,798
2,183
0,133
0,376
0,466
6525
3267
2773
A
ns
µC
mWs
A/µs
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
22
-12
kΩ
+12
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
4
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
150
I C (A)
I C (A)
150
120
120
90
90
60
60
30
30
0
0
0
1
2
3
4
V C E (V)
0
5
1
2
3
250
µs
25 °C
tp =
250
V GE=
15
V
125 °C
Tj =
125
150 °C
V GE from
8 V to 18 V in steps of 1 V
Typical transfer characteristics
5
V C E (V)
tp =
T j:
4
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
Z th(j-s) = f(t p)
101
40
I C (A)
50
Z t h(j
h(j--s)(K/W)
I C = f(V GE)
IGBT
100
30
20
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0,5
0,2
0,1
0,05
0,02
0,01
10-1
10
10-2
10-4
0
0
1
2
3
4
5
6
7
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
V CE =
10
V
125 °C
R th(j-s) =
T j:
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150 °C
10-1
10
101
t p (s)
102
tp / T
1,13
K/W
IGBT thermal model values
R th (K/W)
5
7,12E-02
τ (s)
8,15E+00
1,29E-01
6,00E-01
4,31E-01
9,13E-02
3,15E-01
2,59E-02
1,31E-01
5,80E-03
5,02E-02
8,53E-04
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G )
V G E (V)
15
520V
12,5
130V
10
7,5
5
2,5
0
0
20
40
60
80
100
120
140
Q G (nC)
At
I C=
50
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A
6
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
Z th(j-s) = f(t p)
101
90
Z t h( jj--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
75
100
60
45
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
15
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
1032
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,83
K/W
150 °C
FWD thermal model values
R (K/W)
6,05E-02
τ (s)
3,63E+00
1,50E-01
6,48E-01
8,27E-01
7,70E-02
4,06E-01
1,51E-02
2,16E-01
3,45E-03
1,73E-01
7,36E-04
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
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7
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
E = f(I C)
E = f(rg)
1,2
1,6
E ( mWs)
Typical swit ching energy losses as a f unct ion of gate resistor
E (mWs)
Typical swit ching energy losses as a f unction of collector current
Eon
Eon
0,9
1,2
Eon
Eo n
Eon
Eon
Eoff
0,6
0,8
Eoff
E o ff
0,3
0,4
Eoff
Eoff
Eoff
0
0
0
10
20
30
40
50
60
70
80
90
100
0
I C (A)
25 °C
With an induc tive load at
300
V
V CE =
±15
V
V GE =
R gon =
8
Ω
R goff =
8
Ω
T j:
5
10
15
150 °C
50
IC =
Figure 3.
FWD
25
30
R g ( Ω)
35
25 °C
With an inductive load at
300
V
V CE =
±15
V
V GE =
125 °C
20
T j:
125 °C
150 °C
A
Figure 4.
FWD
Typical reverse recovered energy loss as a f unction of collector current
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(I c)
E rec = f(r g )
0,6
E (mWs)
E (mWs)
0,8
Erec
0,6
0,45
Erec
Erec
0,3
0,4
Erec
0,2
0,15
Erec
Erec
0
0
0
10
20
30
With an induc tive load at
300
V
V CE =
±15
V
V GE =
R gon =
8
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40
50
60
70
80
90
I C (A)
0
100
25 °C
T j:
5
10
With an inductive load at
300
V
V CE =
±15
V
V GE =
125 °C
150 °C
Ω
IC=
8
50
15
20
25
30
35
r g (Ω)
25 °C
T j:
125 °C
150 °C
A
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(on)
td(off )
0,1
td(off )
0,1
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
0
10
20
30
40
50
60
70
80
90
100
0
I C (A)
(A)
With an induc tive load at
150
°C
Tj=
300
V
V CE =
5
10
15
20
25
r g (Ω)
35
With an inductive load at
150
°C
Tj=
300
V
V CE =
V GE =
±15
V
V GE =
R gon =
8
Ω
IC =
R goff =
8
Ω
Figure 7.
FWD
±15
V
50
A
Figure 8.
FWD
t rr = f(I C)
t rr = f(R gon)
0,16
0,2
t rr (μs)
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t r r (μs)
Typical reverse recovery t ime as a f unction of collector current
trr
trr
0,12
trr
trr
0,15
0,08
0,1
0,04
trr
0,05
trr
0
0
0
10
20
30
40
50
60
70
80
90
100
0
I C (A)
At
30
300
V
V GE =
±15
V
R gon =
8
Ω
V CE=
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10
15
20
25
30
35
R g on (Ω)
25 °C
T j:
5
At
V CE =
125 °C
V GE =
150 °C
IC=
9
300
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a f unction of collector current
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
2,5
Q r (µC)
Q r (μ C)
3
Qr
Qr
2,5
2
Qr
2
1,5
Qr
1,5
1
1
Qr
0
At
Qr
0,5
0,5
0
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
I C (A)
300
V
V GE =
±15
V
R gon =
8
Ω
V CE =
At
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
300
V
±15
V
50
A
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
80
35
R g o n (Ω)
25 °C
I R M (A)
I R M (A)
70
I RM
60
60
50
I RM
40
I RM
40
30
IRM
I RM
20
20
IRM
10
0
0
0
At
20
40
300
V
V GE =
±15
V
R gon =
8
Ω
V CE =
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60
80
I C (A)
0
100
10
15
20
25
30
35
R g o n (Ω)
25 °C
T j:
5
At
V CE =
125 °C
V GE =
150 °C
IC=
10
300
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
12000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
10000
diF / dt
di r r /dt
8000
di F / dt
di r r/ dt
9000
6000
6000
4000
3000
2000
0
0
0
10
20
30
40
50
60
70
80
90
0
100
5
10
I C (A)
300
V
V GE =
±15
V
R gon =
8
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
300
V
±15
V
50
A
15
20
25
30
35
R g o n (Ω)
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
120
I C MAX
I c CHIP
100
M ODULE
80
Ic
60
40
V CE MAX
20
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
8
Ω
R goff =
8
Ω
Tj =
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11
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Definitions
General conditions
=
150 °C
=
8Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
8Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
160
250
%
%
140
200
tdoff
120
VCE
100
150
VGE 90%
IC
VCE 90%
VCE
80
60
VGE
100
IC
VGE
tdon
40
50
tEoff
20
VGE 10%
IC 1%
0
VCE 3%
IC 10%
0
tEon
-20
-0,1
-0,05
0
0,05
0,1
0,15
-50
2,95
0,2
3
3,05
3,1
3,15
3,2
3,25
t (µs)
3,3
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
300
V
I C (100%) =
50
A
I C (100%) =
t doff =
0,076
µs
t don =
0,060
µs
t Eoff =
Figure 3.
0,125
µs
t Eon =
Figure 4.
0,152
µs
V GE (0%) =
-15
V
V GE (100%) =
15
V
V C (100%) =
300
V
50
A
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
200
150
%
%
125
IC
175
IC
VCE
fitted
150
100
IC 90%
125
VCE
75
100
IC 90%
IC 60%
50
75
tr
IC 40%
50
25
IC10%
25
IC 10%
0
0
tf
-25
-0,015
-0,005
0,005
0,015
0,025
0,035
-25
0,045
3
t ( µs)
V C (100%) =
300
3,02
3,04
3,06
V C (100%) =
300
3,1
V
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,009
µs
tr =
0,011
µs
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3,08
t (µs)
V
12
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
150
%
IC 1%
100
%
Eoff
125
Pon
Poff
Eon
100
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-25
-0,1
-0,05
0
0,05
2,9
0,1
2,95
3
3,05
P off (100%) =
14,99
kW
P on (100%) =
14,99
kW
E off (100%) =
0,34
mJ
E on (100%) =
0,56
mJ
t Eoff =
0,13
µs
t Eon =
0,15
µs
Figure 7.
3,1
3,15
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
125
%
Id
100
75
trr
50
25
0
IRRM 10%
Vd
-25
fitted
-50
-75
IRRM 90%
IRRM 100%
-100
-125
3
3,05
3,1
3,15
3,2
t (µs)
V d (100%) =
300
V
I d (100%) =
50
A
I RRM (100%) =
-49
A
t rr =
0,117
µs
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23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
150
150
%
%
Qrr
Id
125
100
Erec
100
tErec
75
50
tQrr
50
0
Prec
25
0
-50
-25
-100
3
3,1
3,2
3,3
3,4
-50
3,5
3
t (µs)
3,05
3,1
3,15
3,2
3,3
3,35
3,4
t (µs)
I d (100%) =
50
A
P rec (100%) =
14,99
kW
Q rr (100%) =
2,18
µC
E rec (100%) =
0,47
mJ
t Qrr =
0,26
µs
t Erec =
0,26
µs
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3,25
14
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Ordering Code
10-FY074PA050SM-M582F38
Text
Datamatrix
in DataMatrix as
M582F38
in packaging barcode as
M582F38
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
0
Y
28,2
2
3
28,2
S11
3
23,55
28,2
Therm1
4
28,65
28,2
Therm2
5
49,2
28,2
S13
6
52,2
28,2
G13
7
52,2
20,25
DC-2
8
52,2
17,75
DC-2
9
52,2
10,5
DC+
10
52,2
8
DC+
11
12
13
52,2
49,2
43,2
0
0
0
G14
S14
14
40,7
0
Ph2
15
38,2
0
Ph2
16
14
0
Ph1
17
11,5
0
Ph1
18
9
0
Ph1
19
3
0
S12
20
0
0
G12
21
0
8
DC+
22
0
10,5
DC+
23
0
17,75
24
0
20,25
DC-1
DC-1
Copyright Vincotech
Function
G11
Ph2
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23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T13,T14
IGBT
650V
50A
H-bridge Switch
D11,D12,D13,D14
FWD
650V
30A
H-bridge Diode
Rt
NTC
-
-
Thermistor
Copyright Vincotech
16
Comment
23 Jul. 2015 / Revision 2
10-FY074PA050SM-M582F38
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Document No.:
Date:
10-FY074PA050SM-M582F38-D2-14
23 Jul. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
23 Jul. 2015 / Revision 2
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