10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet flow SOL 1 BI 650 V / 50 A Features flow 1 12mm housing Booster: ● Dual boost topology ● Ultra High-Speed IGBT and Diode ● High efficiency bypass rectifier Inverter: ● Split Output H-Bridge topology ● High-Speed IGBT and Diode ● Integrated DC capacitors ● Temperature sensor Schematic Target applications ● Power Supply ● Solar ● Welding Types ● 10-FY07BIA050SM-M523E38 ● 10-PY07BIA050SM-M523E38Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 43 A 150 A 84 W In. Boost Switch\H-Bridge Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Parameter Conditions Symbol Value Unit 650 V 33 A 90 A 62 W 175 °C Value Unit 650 V 17 A 20 A 33 W 175 °C Value Unit 1600 V 48 A 270 A 370 A s 60 W 150 °C In. Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T S=80°C T j=T jmax T S=80°C Conditions Symbol In. Boost Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T s = 80°C T j = T jmax T s = 80°C Conditions Symbol Bypass Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM T j = T jmax T h = 80°C 50 Hz Single Half Sine Wave T j = 150°C 2 Surge current capability I t t p = 10 ms Total power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax Copyright Vincotech 2 T h = 80°C 2 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Parameter Conditions Symbol Value Unit 650 V 38 A 60 A 52 W 175 °C H-Bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T s = 80°C T j = T jmax T j = T jmax T s = 80°C DC Link Capacitance Parameter Maximum DC voltage Operation Temperature Conditions Value Unit V MAX 630 V T op -55…+125 °C Value Unit Symbol Module Properties Parameter Conditions Symbol Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 3 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Characteristic Values In. Boost Switch\H-Bridge Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 1 1,82 2,22 Static Gate-emitter threshold voltage V GE(th) V GE=V CE 0,0005 25 125 25 Collec tor-emitter saturation voltage 15 V CEsat 50 125 2,00 V V 150 Collec tor-emitter c ut-off current I CES 0 650 Gate-emitter leakage c urrent I GES 20 0 25 40 125 25 120 125 rg none Input capacitance C ies 3000 Output capacitance C oes Reverse transfer capac itance C res Internal gate resistance Gate c harge f=1 MHz 0 25 nA Ω 50 25 µA pF 11 15 Qg 520 50 25 120 nC 1,13 K/W Value Unit Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK In. Boost Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 25 2,46 2,6 125 2,03 Static Forward voltage 30 VF V 150 Reverse leakage c urrent 665 Ir 25 10 150 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-c hange material ʎ =3,4W/mK 1,54 4 K/W 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet In. Boost Inverse Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,67 1,87 125 1,56 Static Forward voltage 10 VF V 150 Reverse leakage current 25 650 Ir 0,14 150 µA Thermal Thermal resistance junction to sink phase-change material ʎ =3,4W/mK R th(j-s) 2,87 K/W Value Unit Bypass Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 25 1,17 1,21 125 1,1 Static Forward voltage 35 VF V 150 Reverse leakage current 25 1600 Ir 50 150 1100 µA Thermal Thermal resistanc e junction to sink R th(j-s) phase-c hange material ʎ =3,4W/mK 1,16 K/W Value Unit H-Bridge Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 1,35 1,7 Static 25 Forward voltage 30 VF 125 V 150 Reverse leakage current 650 Ir 25 1,6 150 µA Thermal Thermal resistance junction to sink Copyright Vincotech R th(j-s) phase-change material ʎ =3,4W/mK 1,82 5 K/W 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet DC Link Capacitance Parameter Symbol Conditions Value T j [°C] Capacitance Min Typ Unit Max 47 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] Value 100 R100=1486 Ω Power dissipation constant Typ Unit Max 22 -12 kΩ +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 6 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Ordering Code & Marking Version without thermal paste solder pins with thermal paste solder pins without thermal paste Press-fit pins with thermal paste Press-fit pins Ordering Code 10-FY07BIA050SM-M523E38 10-FY07BIA050SM-M523E38-/3/ 10-PY07BIA050SM-M523E38Y 10-PY07BIA050SM-M523E38Y-/3/ NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as M523E38 M523E38 M523E38Y M523E38Y in packaging barcode as M523E38 M523E38-/3/ M523E38Y M523E38Y-/3/ Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 0 28,2 G25 30 33,5 0 Ph1 2 3 28,2 S25 31 41,2 0 Ph2 3 6 28,2 N.C. 32 44,2 0 S14 4 12,35 28,2 33 47,2 0 34 52,2 0 G14 Ph2 5 15,35 28,2 N.C. S27 6 18,35 28,2 G27 7 22,35 28,2 N.C. 8 25,35 28,2 S11 9 28,35 28,2 G11 10 34,7 28,2 Therm1 11 39,8 28,2 Therm2 12 46,2 28,2 G13 13 49,2 28,2 S13 14 52,2 28,2 N.C. 15 37,25 22,85 DC- 16 37,25 20,35 DC- 17 9,85 15,45 DC-Boost 18 9,85 12,95 DC-Boost 19 36 11,8 DC+ 20 38,5 11,8 DC+ 21 7,25 6,35 DC+Boost 22 9,75 6,35 DC+Boost 23 0 0 ACIn1 24 5 0 Sol1 25 10,5 0 Sol2 26 15,5 0 ACIn2 27 22,5 0 Ph1 28 27,5 0 G12 29 30,5 0 S12 Copyright Vincotech Function 7 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Pinout Identification ID Component Voltage Current Function T25,T27 IGBT 650V 50A In. Boost Switch D25,D27 FWD 650V 30A In. Boost Diode D45,D47 FWD 650 10A In. Boost Inverse Diode D26,D28 Rectifier 1600V 35A Bypass Diode T11,T12,T13,T14 IGBT 650V 50A H-Bridge IGBT D11,D12,D13,D14 FWD 650V 30A H-Bridge Diode C10,C20 Capacitor 630V - DC Link Capacitance Rt NTC - - Thermistor Copyright Vincotech 8 Comment 19 Okt. 2015 / Revision 1 10-FY07BIA050SM-M523E38 10-PY07BIA050SM-M523E38Y target datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: 10-FY07BIA050SM-M523E38-T1-14 19 Oct. 2015 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 9 19 Okt. 2015 / Revision 1