10 xY07BIA050SM M523E38x T1 T4

10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
flow SOL 1 BI
650 V / 50 A
Features
flow 1 12mm housing
Booster:
● Dual boost topology
● Ultra High-Speed IGBT and Diode
● High efficiency bypass rectifier
Inverter:
● Split Output H-Bridge topology
● High-Speed IGBT and Diode
● Integrated DC capacitors
● Temperature sensor
Schematic
Target applications
● Power Supply
● Solar
● Welding
Types
● 10-FY07BIA050SM-M523E38
● 10-PY07BIA050SM-M523E38Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
43
A
150
A
84
W
In. Boost Switch\H-Bridge Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
33
A
90
A
62
W
175
°C
Value
Unit
650
V
17
A
20
A
33
W
175
°C
Value
Unit
1600
V
48
A
270
A
370
A s
60
W
150
°C
In. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
IFRM
Power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j=T jmax
T S=80°C
T j=T jmax
T S=80°C
Conditions
Symbol
In. Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T s = 80°C
T j = T jmax
T s = 80°C
Conditions
Symbol
Bypass Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
T j = 150°C
2
Surge current capability
I t
t p = 10 ms
Total power dissipation
P tot
T j = T jmax
Maximum Junction Temperature
T jmax
Copyright Vincotech
2
T h = 80°C
2
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
38
A
60
A
52
W
175
°C
H-Bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T s = 80°C
T j = T jmax
T j = T jmax
T s = 80°C
DC Link Capacitance
Parameter
Maximum DC voltage
Operation Temperature
Conditions
Value
Unit
V MAX
630
V
T op
-55…+125
°C
Value
Unit
Symbol
Module Properties
Parameter
Conditions
Symbol
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V isol
DC voltage
t p=2s
>200
CTI
3
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Characteristic Values
In. Boost Switch\H-Bridge Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
1
1,82
2,22
Static
Gate-emitter threshold voltage
V GE(th)
V GE=V CE
0,0005
25
125
25
Collec tor-emitter saturation voltage
15
V CEsat
50
125
2,00
V
V
150
Collec tor-emitter c ut-off current
I CES
0
650
Gate-emitter leakage c urrent
I GES
20
0
25
40
125
25
120
125
rg
none
Input capacitance
C ies
3000
Output capacitance
C oes
Reverse transfer capac itance
C res
Internal gate resistance
Gate c harge
f=1 MHz
0
25
nA
Ω
50
25
µA
pF
11
15
Qg
520
50
25
120
nC
1,13
K/W
Value
Unit
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
In. Boost Diode
Parameter
Symbol
Conditions
V r [V] I F [A] T j [°C]
Min
Typ
Max
25
2,46
2,6
125
2,03
Static
Forward voltage
30
VF
V
150
Reverse leakage c urrent
665
Ir
25
10
150
µA
Thermal
Thermal resistance junc tion to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
1,54
4
K/W
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
In. Boost Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,67
1,87
125
1,56
Static
Forward voltage
10
VF
V
150
Reverse leakage current
25
650
Ir
0,14
150
µA
Thermal
Thermal resistance junction to sink
phase-change
material
ʎ =3,4W/mK
R th(j-s)
2,87
K/W
Value
Unit
Bypass Diode
Parameter
Symbol
Conditions
V r [V] I F [A] T j [°C]
Min
Typ
Max
25
1,17
1,21
125
1,1
Static
Forward voltage
35
VF
V
150
Reverse leakage current
25
1600
Ir
50
150
1100
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
1,16
K/W
Value
Unit
H-Bridge Diode
Parameter
Symbol
Conditions
V r [V] I F [A] T j [°C]
Min
Typ
Max
1,35
1,7
Static
25
Forward voltage
30
VF
125
V
150
Reverse leakage current
650
Ir
25
1,6
150
µA
Thermal
Thermal resistance junction to sink
Copyright Vincotech
R th(j-s)
phase-change
material
ʎ =3,4W/mK
1,82
5
K/W
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
DC Link Capacitance
Parameter
Symbol
Conditions
Value
T j [°C]
Capacitance
Min
Typ
Unit
Max
47
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
Value
100
R100=1486 Ω
Power dissipation constant
Typ
Unit
Max
22
-12
kΩ
+14
%
25
200
mW
25
2
mW/K
B-value
B(25/50)
Tol. ±3%
25
3950
K
B-value
B(25/100) Tol. ±3%
25
3998
K
Vincotech NTC Reference
Copyright Vincotech
B
6
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Ordering Code & Marking
Version
without thermal paste solder pins
with thermal paste solder pins
without thermal paste Press-fit pins
with thermal paste Press-fit pins
Ordering Code
10-FY07BIA050SM-M523E38
10-FY07BIA050SM-M523E38-/3/
10-PY07BIA050SM-M523E38Y
10-PY07BIA050SM-M523E38Y-/3/
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
M523E38
M523E38
M523E38Y
M523E38Y
in packaging barcode as
M523E38
M523E38-/3/
M523E38Y
M523E38Y-/3/
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
0
28,2
G25
30
33,5
0
Ph1
2
3
28,2
S25
31
41,2
0
Ph2
3
6
28,2
N.C.
32
44,2
0
S14
4
12,35
28,2
33
47,2
0
34
52,2
0
G14
Ph2
5
15,35
28,2
N.C.
S27
6
18,35
28,2
G27
7
22,35
28,2
N.C.
8
25,35
28,2
S11
9
28,35
28,2
G11
10
34,7
28,2
Therm1
11
39,8
28,2
Therm2
12
46,2
28,2
G13
13
49,2
28,2
S13
14
52,2
28,2
N.C.
15
37,25
22,85
DC-
16
37,25
20,35
DC-
17
9,85
15,45
DC-Boost
18
9,85
12,95
DC-Boost
19
36
11,8
DC+
20
38,5
11,8
DC+
21
7,25
6,35
DC+Boost
22
9,75
6,35
DC+Boost
23
0
0
ACIn1
24
5
0
Sol1
25
10,5
0
Sol2
26
15,5
0
ACIn2
27
22,5
0
Ph1
28
27,5
0
G12
29
30,5
0
S12
Copyright Vincotech
Function
7
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T25,T27
IGBT
650V
50A
In. Boost Switch
D25,D27
FWD
650V
30A
In. Boost Diode
D45,D47
FWD
650
10A
In. Boost Inverse Diode
D26,D28
Rectifier
1600V
35A
Bypass Diode
T11,T12,T13,T14
IGBT
650V
50A
H-Bridge IGBT
D11,D12,D13,D14
FWD
650V
30A
H-Bridge Diode
C10,C20
Capacitor
630V
-
DC Link Capacitance
Rt
NTC
-
-
Thermistor
Copyright Vincotech
8
Comment
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
10-FY07BIA050SM-M523E38-T1-14
19 Oct. 2015
Modification:
Pages
Product status definition
Datasheet Status
Product Status
Target
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
9
19 Okt. 2015 / Revision 1
Similar pages