AL-D to AL-J Migration AN

Migration from AL-D to AL-J (8 - 16 Mb)
Application Note
By Matteo Zammattio
1. Introduction
The two devices S29AL008D and S29AL016D manufactured with the 200 nm Floating-Gate technology are
being migrated to the next generation AL-J 110 nm Floating-Gate technology.
All the hardware/software features and most of the package options of the old devices have been maintained,
in order to assure a seamless pin-to-pin compatible migration for the great majority of the applications.
In addition, the S29AL008J and S29AL016J devices offer improved access time (55 ns) with the regulated
voltage option and faster erase/program speed.
As additional security features, the new devices are offering an improved hardware boot sector protection via
a dedicated hardware pin (WP#) and a 256 byte secure region, which can be either provided with a random
serial number and factory locked or programmable and lockable by the user. The AL-J series Flash has
Sector Group Protection security features replacing the individual Sector Protection feature of the AL-D.
2. Architectural/Feature Comparison
In Table 2.1, a feature comparison summary of the S29AL008/016D and S29AL008/016J devices is provided.
Table 2.1 Feature Comparison (Sheet 1 of 2)
Feature
S29AL008D / S29AL016D
S29AL008J / S29AL016J
Technology
200 nm Floating-Gate technology
110 nm Floating-Gate technology
Sector Architecture
4 Small boot sectors: One 16 KB, two 8 KB, one
32 KB.
(AL008D) 15 Large sectors of 64 KB.
(AL016D) 31 Large sectors of 64 KB.
Small boot sectors can be located at either
bottom or top of the address range.
Same sector organization for full software
compatibility.
Top/Bottom boot options maintained.
Access time and supply voltage range
70 ns Full VCC 2.7V to 3.6V
90 ns Full VCC 2.7V to 3.6V
55 ns Regulated VCC 3.0V to 3.6V
70 ns Full VCC 2.7V to 3.6V
Bus Architecture
X8 / X16
Same
Device ID
8 Mb: 22DAh, DAh, 225Bh, 5Bh
16 Mb: 22C4h, C4h, 2249h, 49h
Same
Program operation
Single Byte/Word programming
Same
Sector Protection/Unprotection
VID on RESET# pin
VID on A9 /OE# pins
Sector Group Protection/Unprotection scheme
with VID on RESET# pin
Temporary Sector Unprotection
VID on RESET# pin
Temporary Sector Group Unprotection scheme
with VID on RESET# pin.
256 bytes Secure Silicon Sector region
Not available
Available
Data Polling
Software detection of write/erase embedded
algorithms completion.
Same
Ready/Busy# pin
Hardware detection of write/erase embedded
algorithms completion.
Same
Erase suspend/resume
Command to suspend erase to program/read
Same
Set of commands to perform various device
operations.
100% backward compatible plus superset
commands to Enter and Exit the Secure Silicon
Sector.
Command interface
Publication Number AL-D_to_AL-J_Migration_AN
Revision 04
Issue Date October 19, 2010
A pplication
Note
Table 2.1 Feature Comparison (Sheet 2 of 2)
Feature
S29AL008D / S29AL016D
S29AL008J / S29AL016J
WP# pin
Not available
WP# pin to protect the lowest (bottom boot)
highest (top boot) 16 KB sector.
The pin has an internal pull-up, so it can be left
unconnected in existing designs.
Package Summary
TS048, VBK048, SO044, KGD
TS048, VBK048, KGD (all with WP#).
New LAE064 (16 Mb only) and SSOP56
packages.
SO044 package not available.
Minor differences in the DC characteristics are summarized in Table 2.2. The absolute maximum parameter
ratings are unchanged from AL-D to AL-J.
Table 2.2 DC Characteristics Comparison
Parameter
Description
ILI
WP# Input Load Current (max)
AL-D
AL-J
Comments
ICC1
Active Read Current @ 5 MHz
Typ: 9 mA
Max: 16 mA
Typ: 7 mA
Max: 12 mA
AL-J products have slightly lower power
consumption in read mode.
ICC2
VCC Active Erase/Program.
Current
Typ: 20 mA
Max: 35 mA
Typ: 20 mA
Max: 30 mA
AL-J products have slightly lower power
consumption in write mode.
VIL
Input Low Voltage
Min: -0.5V
Max: 0.8V
Min: -0.1V
Max: 0.8V
AL-J products have increased minimum VIL
to preserve ICC3, ICC4, and ICC5 current
specifications.
VOH1
(min)
Output High voltage
@ IOH -2 mA, VCC = VCC min
2.4V
0.85 * VCC
In case of VCC (min) = 2.7V, AL-J has a VOH1
(min) = 2.3V, which is comparable with the
AL-D products.
VID
Voltage for Autoselect and
Temporary Sector Unprotect.
Typ: 11.5V
Max: 12.5V
Typ: 8.5V
Max: 12.5V
AL-J products can activate autoselect and
temporary sector unprotection with a lower
VID voltage level.
VLKO
Low VCC Lock-out voltage
Min: 2.3V
Max: 2.5V
Min: 2.1V
Max: 2.5V
AL-J products operate at slightly lower VCC
before disabling erase/program operations.
± 25 µA
Table 2.3 AC Characteristics Comparison
2
Parameter
Description
AL-D
AL-J
Comments
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (max)
20 µs
35 µs
Please allow for a longer reset time pulse to the
AL-J devices to insure proper embedded algorithm
read/write operation.
tRPD
RESET# low to standby mode (min)
20 µs
35 µs
Please allow for a slightly longer reset time to drive
the AL-J device into standby mode during a
hardware reset operation.
tWPH
Write Pulse Width High (min)
30 ns
25 ns
AL-J allows faster toggling of the write cycles. This
parameter is relevant during subsequent write
cycles.
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect (min)
4 µs
New AL-J parameter
tCPH
CE# Pulse Width High (min)
30 ns
25 ns
AL-J allows faster toggling of the write cycles/CE#
controlled. This parameter is relevant during
subsequent write cycles.
Erase Suspend during sector erase
operation (max)
20 µs
35 µs
AL-J is slower to suspend when the Erase
Suspend command is written during a sector
erase operation.
AL-D_to_AL-J_Migration_AN_04
October 19, 2010
App l ic atio n
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3. Design Considerations
3.1
WP#, Write Protect
The AL-J adds the Write Protect input pin (WP#) in place of a No Connect on the AL-D as shown in
Figure 3.1. This feature offers a hardware method to protect the boot block of the application. When
WP# = VIL, program and erase functions are disabled in the lowest (bottom boot) or highest (top boot) 16 KB
sector.
The WP# pin has an internal pull-up, so it can be left unconnected in existing designs.
The S29AL016J TS048 and VBK048 packages are footprint backward compatible with S29AL016D designs if
pin 14 of the TS048 48-pin TSOP or ball B3 of the VBK048 48-ball Fine-pitch BGA is treated as No Connect.
Figure 3.1 AL-J WP# Location In the TS048 and VBK048 Package Pinouts
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
3.2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
(Top View, Balls Facing Down)
DC Performance Characteristics
The DC characteristics are either mostly unchanged or improved. That means that the new AL-J device
family has improved power consumption compared to the equivalent AL-D under certain operation conditions.
One major different is that the minimum Input Low Voltage (VIL) has changed to -0.5V to -0.1V. This change
was necessary in the AL-J family to preserve the ICC3, ICC4, and ICC5 current specifications. If a customer
were to use a minimum Input Low Voltage less than -0.1V but greater than -0.5V, the excess current
consumption would negatively impact battery life but would not damage the circuit or cause logic 0 input
judgment errors. It is recommended that customers follow the new AL-J minimum Input Low Voltage value of
-0.1V to prevent the excess current consumption.
3.3
AC Performance Characteristics
The AC characteristics are mostly either unchanged or improved. That means that the new AL-J device family
has improved speed compared to the equivalent AL-D except for a few parameters.
The AL-J requires 35s to Reset during an embedded algorithm (tREADY) or during suspend (tRPD) compared
to the 20s required by AL-D devices.
One of the major differences is the test condition for the slowest speed grade. AL-D had the 90 ns speed
class able to match a maximum bus load of 100 pF.
The AL-J AC test conditions are now referring to a typical load of 30 pF for both the 55 ns and 70 ns speed
grades. Please consider that the driving strength of the AL-J device's output buffers can be slightly different
compared to the AL-D ones. It's recommended to perform qualification experiments to validate AL-J on
existing AL-D sockets. Boards with heavy bus loads (>30 pF) will require careful evaluation of the new AL-J
devices. IBIS models are also available on the Spansion web site to evaluate the new device on existing PCB
designs.
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A pplication
3.4
3.4.1
Note
Hardware Sector Protection
Sector Protection vs. Sector Group Protection
The AL-J supports hardware Sector Group Protection unlike the AL-D which supports independent hardware
Sector Protection control of any sector or combination of sectors. AL-J Sector Group Protection permits
independent sector protection control over boot sectors and the one adjacent 64 Kbyte sector while grouping
the remaining 64 Kbyte sectors.
AL-J Sector Group Protection addressing requires the Sector group address with A6=0, A3=A2=0, A1=1, and
A0=0 while AL-D Sector Protection addressing required the Sector address with A6=0, A1=1, and A0=0. Both
the AL-J and AL-D use RESET# hardware circuitry to control the nominal 12V (VID) voltage that is required
for the Sector Group Protection and Unprotection or Sector Protection and Unprotection operations
respectively. For RESET# Pin circuitry implementation suggestions, please refer to the “Reset Pin Circuitry
for Flash Memory Sector Protection Management” Application Note.
3.4.2
Sector Group Unprotection
Sector unprotection is a reversed operation, which also needs a 12V VID on RESET# pin before the flow.
AL-J Sector Group Unprotection addressing requires the Sector group address with A6=1, A3=A2=0, A1=1,
and A0=0 while AL-D Sector Unprotection addressing required the Sector address with A6=1, A1=1, and
A0=0.
3.4.3
Temporary Sector Group Unprotect
The AL-J hardware Temporary Sector Group Unprotect feature is consistent with AL-D Temporary Sector
Unprotect unless the WP# = VIL, then the first or last 16 Kbyte AL-J sector remains protected.
This feature allows temporary unprotection of previously protected sector groups to change the data in
system. The Sector Group Unprotect mode is activated by setting the RESET# pin to VID. During this mode,
formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is
removed from the RESET# pin, all the previously protected sectors are protected again.
3.5
Secured Silicon Sector
The AL-J supports the Secured Silicon Sector feature unlike the AL-D.
The AL-J adds the Secured Silicon Sector feature providing a 256-byte OTP (One Time Programmable)
Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN).
Spansion offers the device with the Secured Silicon Sector either factory-locked or customer-lockable. For
details, please refer to the data sheet.
RESET# = VID is required to program or verify the Customer Lockable version of the AL-J.
3.5.1
Autoselect Mode
The AL-J adds Address 03h to Autoselect Mode, and the DQ7 Indicator Bit (DQ7) of Address 03h indicates if
the Secured Silicon Sector has been factory locked or not factory locked.
3.6
Command Set
The AL-J Command Sequences are backward software compatible with the AL-D. The AL-J adds two
Command Sequences, Enter Secured Silicon Sector and Exit Secured Silicon Sector, to read the Secured
Silicon Sector or program the Customer Lockable Version of the device once.
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App l ic atio n
3.7
No t e
Common Flash Interface (CFI) Differences
S29AL008J includes a CFI option unlike S29AL008D which had no CFI support.
S29AL016J has minimal CFI changes versus S29AL016D. S29AL016J CFI locations 44h, Minor version
number, and 45h, Process Technology Bits 5-2, in Word Mode can be used by software to distinguish
between the AL-J and AL-D versions.
S29AL016J CFI locations 1Fh and 21h (Word Mode) contain shorter program and erase time-outs than the
AL-D.
AL-J CFI location 49h indicates the device has Group Sector Protection with RESET# = VID unlike the AL-D
which has Sector Protection with RESET# = VID.
AL-J CFI locations 4Dh to 50h (Word Mode) expose new device capabilities in the Primary Vendor-Specific
Extended Query.
3.8
Erase and Programming Performance
The AL-J devices erase and programming performance has been improved compared to the AL-D devices.
Table 3.1 Erase and Programming Timing
3.9
Parameter
AL-D
AL-J
Sector Erase time (typ)
0.7s
0.5s
Sector Erase time (max)
10s
10s
Chip Erase time (typ)
25s
16s
Byte programming time (typ)
7 µs
6 µs
Word programming time (typ)
7 µs
6 µs
Word programming time (max)
210 µs
150 µs
Comments
A similar sector erase worst-case time out can be used with AL-D
and AL-J.
Multiple Sector Erase
In AL-D or AL-J devices, multiple sectors can be erased together by entering additional sector erase
commands before the Sector Erase Timer expires (50 µs from the last Sector Erase Command). However,
there is a slight difference on the command sequence requirement between the AL-D and AL-J devices.
As indicated in the AL-J data sheet, the correct command sequence for doing multi-sector erase is shown in
Address/Data format:
555h/AAh
2AAh/55h
555h/80h
555h/AAh
2AAh/55h
SA1/30h
SA2/30h
SA3/30h
In this example, two additional sectors, SA2 and SA3 will be erased along with SA1.
When migrating from software that does multi-sector erase on AL-D devices, the software may have two
unlock cycles before the red box in the above sequence. Any additional command cycle may cause the multisector erase malfunction in AL-J devices.
If no multi-sector erase function is used in AL-D software, no changes are required.
Note that multi-sector erase does not significantly improve the system performance because the actual erase
time will be the sum of each individual sector erase time. The time saved by omitting a few command
sequences are insignificant compared to the sector erase time.
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A pplication
3.10
Note
First Read after Power Reset
For AL-J devices, during the power up sequence, CE# should only go low after RESET# has gone high.
Keeping CE# low from power up through the first read could cause the first read to retrieve erroneous data.
This behavior does not exist in AL-D devices.
4. Package Comparison
Table 4.1 provides a matrix of the supported S29AL008/0016D and S29AL008/016J package options.
The AL-J devices continue to support the TS048 (48-pin Standard TSOP) and the VBK048 (48-ball Fine-pitch
BGA) packages like the AL-D. However, the AL-J devices do not support the SO044, 44-Pin SOP (Small
Outline Package) 28.20 mm x 13.30 mm, unlike the AL-D. Instead, AL-J supports the smaller and higher pin
count SSOP56 (56-pin Shrink Small Outline Package).
The S29AL016J also supports the LAE064, 64-Ball Fortified Ball Grid Array (BGA) 9 mm x 9 mm. The
LAE064 package ball-out is a compatible subset of the Spansion Universal Footprint used by the GL MirrorBit
family.
Table 4.1 AL-D and AL-J Package Options
Package Offered (Size)
S29AL008D
S29AL016D
S29AL008J
TS048 (20 x 12 mm)
Supported
Supported
Supported
S29AL016J
Supported
VBK048 (8.15 x 6.15 mm)
Supported
Supported
Supported
Supported
SO44 (16 x 28.20 mm)
Supported
Supported
Not Available
Not Available
SSOP56 (16 x 23.70 mm)
Not Available
Not Available
Supported
Supported
LAE064 (9 x 9 mm)
Not Available
Not Available
Not Available
Supported
KGD (Known-Good Die)
Supported
Supported
Supported
Supported
5. ROHS
AL-J Standard Products are only offered in RoHS compliant Pb-Free package material sets unlike the AL-D.
6. References
 S29AL008J Data Sheet (S29AL008J_00)
 S29AL016J Data Sheet (S29AL016J_00)
 S29AL008D Data Sheet (S29AL008D_00)
 S29AL016D Data Sheet (S29AL016D_00)
 “Reset Pin Circuitry for Flash Memory Sector Protection Management” Application Note
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7. Revision History
Section
Description
Revision 01 (November 18, 2008)
Initial release
Revision 02 (April 3, 2009)
Global
Minor updates
Revision 03 (October 28, 2009)
Architectural/Feature Comparison
DC Characteristics Comparison table: added comment for VIL
Design Considerations
Added new section: DC Performance Characteristics
Revision 04 (October 19, 2010)
Architectural/Feature Comparison
Removed invalid signals tASO, tOEPH, tCEH
Design Considerations
Added new sections: Multiple Sector Erase and First Read after Power Reset
October 19, 2010
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A pplication
Note
Colophon
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limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
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The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
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