Datasheet

Photomicrosensor (Transmissive)
EE-SJ3 Series
Be sure to read Precautions on page 25.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-resolution model with a 0.2-mm-wide sensing aperture, highsensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
0.3
Center mark
■ Absolute Maximum Ratings (Ta = 25°C)
6.2
Item
0.2
Pulse forward
current
10.2
Detector
7.2±0.2
6
Four, 0.5
Four, 0.25
2.54±0.2
Ambient temperature
Model
Internal Circuit
K
C
Aperture (a x b)
EE-SJ3-C
EE-SJ3-D
2.1 x 1.0
2.1 x 0.2
EE-SJ3-G
0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
IFP
1 A (see note 2)
4V
Collector–Emit- VCEO
ter voltage
30 V
Emitter–Collec- VECO
tor voltage
--20 mA
IC
100 mW (see note
1)
Collector dissi- PC
pation
Cross section AA
Rated value
50 mA (see note 1)
Reverse voltage VR
Collector current
7.6±0.3
Cross section BB
Symbol
Forward current IF
Emitter
Operating
Topr
Storage
Tstg
–30°C to 100°C
Tsol
260°C
(see note 3)
Soldering temperature
–25°C to 85°C
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
EE-SJ3-C
Emitter
Detector
Condition
EE-SJ3-G
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
1 to 28 mA typ.
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
VCE (sat)
0.1 V typ.,
0.4 V max.
Peak spectral sensitivity λP
wavelength
0.1 mA min.
---
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
IF = 20 mA, VCE = 10 V
IF = 20 mA,
IL = 0.1 mA
850 nm typ.
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Rising time
tr
4 μs typ.
Falling time
tf
4 μs typ.
110
EE-SJ3-D
EE-SJ3 Series Photomicrosensor (Transmissive)
■ Engineering Data
Ta = 70°C
Light current IL (mA)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Relative Light Current vs. Ambient Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
VCC = 5 V
Ta = 25°C
Sensing Position Characteristics
(EE-SJ3-D)
Load resistance RL (kΩ)
Relative light current IL (%)
Sensing Position Characteristics
(EE-SJ3-C)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
VCE = 10 V
0 lx
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Response Time vs. Load Resistance Characteristics (Typical)
IF = 20 mA
VCE = 5 V
Relative light current IL (%)
Light Current vs. Collector−Emitter
Voltage Characteristics (EE-SJ3-G)
Forward current IF (mA)
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ta = 25°C
VCE = 10 V
Light current IL (mA)
Ta = −30°C
Ta = 25°C
Dark current ID (nA)
PC
Light Current vs. Forward Current
Characteristics (Typical)
Sensing Position Characteristics
(EE-SJ3-G)
Relative light current IL (%)
IF
Forward current IF (mA)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Collector dissipation PC (mW)
Forward current IF (mA)
Forward Current vs. Collector
Dissipation Temperature Rating
IF = 20 mA
VCE = 10 V
Ta = 25°C
−
d
0
+
Center of optical axis
Distance d (mm)
Distance d (mm)
Response Time Measurement
Circuit
Input
Center of optical axis
Output
90 %
10 %
Input
Output
Distance d (mm)
EE-SJ3 Series Photomicrosensor (Transmissive)
111
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