Photomicrosensor (Transmissive) EE-SJ3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide sensing aperture, highsensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. 0.3 Center mark ■ Absolute Maximum Ratings (Ta = 25°C) 6.2 Item 0.2 Pulse forward current 10.2 Detector 7.2±0.2 6 Four, 0.5 Four, 0.25 2.54±0.2 Ambient temperature Model Internal Circuit K C Aperture (a x b) EE-SJ3-C EE-SJ3-D 2.1 x 1.0 2.1 x 0.2 EE-SJ3-G 0.5 x 2.1 Unless otherwise specified, the tolerances are as shown below. A E Terminal No. A K C E Name Anode Cathode Collector Emitter Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 IFP 1 A (see note 2) 4V Collector–Emit- VCEO ter voltage 30 V Emitter–Collec- VECO tor voltage --20 mA IC 100 mW (see note 1) Collector dissi- PC pation Cross section AA Rated value 50 mA (see note 1) Reverse voltage VR Collector current 7.6±0.3 Cross section BB Symbol Forward current IF Emitter Operating Topr Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Soldering temperature –25°C to 85°C Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value EE-SJ3-C Emitter Detector Condition EE-SJ3-G Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 1 to 28 mA typ. Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity λP wavelength 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA Rising time tr 4 μs typ. Falling time tf 4 μs typ. 110 EE-SJ3-D EE-SJ3 Series Photomicrosensor (Transmissive) ■ Engineering Data Ta = 70°C Light current IL (mA) Ta = 25°C IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Collector−Emitter voltage VCE (V) VCC = 5 V Ta = 25°C Sensing Position Characteristics (EE-SJ3-D) Load resistance RL (kΩ) Relative light current IL (%) Sensing Position Characteristics (EE-SJ3-C) IF = 20 mA VCE = 10 V Ta = 25°C Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C Center of optical axis VCE = 10 V 0 lx Ambient temperature Ta (°C) Ambient temperature Ta (°C) Relative light current IL (%) Response time tr, tf (μs) Response Time vs. Load Resistance Characteristics (Typical) IF = 20 mA VCE = 5 V Relative light current IL (%) Light Current vs. Collector−Emitter Voltage Characteristics (EE-SJ3-G) Forward current IF (mA) Forward voltage VF (V) Ambient temperature Ta (°C) Ta = 25°C VCE = 10 V Light current IL (mA) Ta = −30°C Ta = 25°C Dark current ID (nA) PC Light Current vs. Forward Current Characteristics (Typical) Sensing Position Characteristics (EE-SJ3-G) Relative light current IL (%) IF Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C − d 0 + Center of optical axis Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input Center of optical axis Output 90 % 10 % Input Output Distance d (mm) EE-SJ3 Series Photomicrosensor (Transmissive) 111