Datasheet

Photomicrosensor (Reflective)
EE-SY110
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• Compact reflective model with a molded housing.
• Recommended sensing distance = 5.0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Four, 0.5
Item
+0.2
- 0.3
Emitter
Four, R1.5
Detector
15.2±0.2
Four, 0.25
15 to 18
Ambient temperature
Symbol
IF
50 mA
(see note 1)
Pulse forward current
IFP
1A
(see note 2)
Reverse voltage
VR
4V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
–40°C to 85°C
Storage
Tstg
–40°C to 85°C
Tsol
260°C
(see note 3)
Soldering temperature
Internal Circuit
A
C
K
E
Terminal No.
Name
A
K
Anode
Cathode
C
E
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
Rated value
Forward current
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Forward voltage
VF
1.2 V typ., 1.5 V max.
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wavelength
λP
940 nm typ.
IF = 20 mA
Light current
IL
200 μA min., 2,000 μA max.
IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 10 V with no reflection
---
---
λP
850 nm typ.
VCE = 10 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Emitter
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
170
EE-SY110 Photomicrosensor (Reflective)
IF = 30 mA
■ Engineering Data
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Light current IL (μA)
Sensing object: White paper
with a reflection factor of 90%
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 10 V
Ta = 25°C
d1 = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
Direction
Distance d2 (mm)
Distance d (mm)
IF = 30 mA
IF = 20 mA
IF = 10 mA
Response Time vs. Load
Resistance Characteristics
(Typical)
Vcc = 5 V
Ta = 25°C
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Relative light current IL (%)
Ta = 25°C
IF = 20 mA
VCE = 10 V
IF = 40 mA
Collector−Emitter voltage VCE (V)
Sensing Angle Characteristics
VCE = 10 V
(Typical)
IF = 20 mA
Relative light current IL (%)
Ambient temperature Ta (°C)
Ta = 25°C
d = 5 mm
Response time tr, tf (μs)
VCE = 10 V
0x
Dark current ID (nA)
Relative light current IL (%)
IF = 20 mA
VCE = 5 V
Light current IL (mA)
Forward current IF (mA)
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Sensing object: White paper with a
reflection factor of 90%
d = 5 mm
VCE = 10 V
Light current IL (mA)
Forward current IF (mA)
Collector dissipation Pc (mW)
Forward Current vs. Collector
Dissipation Temperature Rating
d = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
d
Angle deviation θ (°)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
EE-SY110 Photomicrosensor (Reflective)
171
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