Photomicrosensor (Reflective) EE-SY110 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Compact reflective model with a molded housing. • Recommended sensing distance = 5.0 mm ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.5 Item +0.2 - 0.3 Emitter Four, R1.5 Detector 15.2±0.2 Four, 0.25 15 to 18 Ambient temperature Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –40°C to 85°C Storage Tstg –40°C to 85°C Tsol 260°C (see note 3) Soldering temperature Internal Circuit A C K E Terminal No. Name A K Anode Cathode C E Collector Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance 3 mm max. ±0.2 3 < mm ≤ 6 ±0.24 6 < mm ≤ 10 ±0.29 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 Rated value Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Emitter Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 170 EE-SY110 Photomicrosensor (Reflective) IF = 30 mA ■ Engineering Data Light Current vs. Forward Current Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) Sensing Distance Characteristics (Typical) Light current IL (μA) Sensing object: White paper with a reflection factor of 90% Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Direction Distance d2 (mm) Distance d (mm) IF = 30 mA IF = 20 mA IF = 10 mA Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25°C Load resistance RL (kΩ) Ambient temperature Ta (°C) Relative light current IL (%) Ta = 25°C IF = 20 mA VCE = 10 V IF = 40 mA Collector−Emitter voltage VCE (V) Sensing Angle Characteristics VCE = 10 V (Typical) IF = 20 mA Relative light current IL (%) Ambient temperature Ta (°C) Ta = 25°C d = 5 mm Response time tr, tf (μs) VCE = 10 V 0x Dark current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V Light current IL (mA) Forward current IF (mA) Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% d = 5 mm VCE = 10 V Light current IL (mA) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating d = 5 mm Sensing object: White paper with a reflection factor of 90% d Angle deviation θ (°) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY110 Photomicrosensor (Reflective) 171