VS-ST1000C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1473 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS A-24 (K-PUK) • DC motor controls • Controlled DC power supplies PRODUCT SUMMARY Package A-24 (K-PUK) Diode variation Single SCR IT(AV) 1473 A VDRM/VRRM 1200 V, 1600 V, 1800 V, 2000 V, 2200 V, 2400 V VTM 1.80 V IGT 100 mA TJ -40 °C to 125 °C • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM VALUES UNITS 1473 A 55 °C 2913 A 25 °C 50 Hz 20.0 60 Hz 21.2 A 50 Hz 2000 60 Hz 1865 VDRM/VRRM Range 1200 to 2400 V tq Typical 300 μs TJ Range -40 to +125 °C IRRM MAXIMUM AT TJ = 125 °C mA I2t I2t 20 000 kA2s kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1000C..K VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 22 2200 2300 24 2400 2500 100 Revision: 28-Apr-16 Document Number: 93714 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS A 55 (85) °C DC at 25 °C heatsink temperature double side cooled 6540 A t = 10 ms 20.0 t = 8.3 ms t = 10 ms t = 8.3 ms I2t t = 8.3 ms Maximum for fusing I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied 21.2 17.0 Sinusoidal half wave, initial TJ = TJ maximum 18.1 1865 1445 t = 0.1 ms to 10 ms, no voltage reapplied 20 000 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.950 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.024 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.283 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.265 Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 VTM Maximum holding current IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1360 Low level value of threshold voltage Maximum on-state voltage drop kA 2000 100 % VRRM reapplied t = 10 ms t = 8.3 ms I2t UNITS 1473 (630) 180° conduction, half sine wave Double side (single side) cooled t = 10 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 300 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 28-Apr-16 Document Number: 93714 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM DC gate current required to trigger IGT TJ = TJ maximum, f = 50 Hz, d% = 50 3 TJ = TJ maximum, tp 5 ms W A 20 V 5.0 TJ = -40 °C 200 - TJ = 25 °C 100 200 50 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 °C IGD TJ = TJ maximum DC gate voltage not to trigger UNITS 3.0 TJ = 125 °C DC gate current not to trigger MAX. 16 TJ = -40 °C VGT TYP. TJ = TJ maximum, tp 5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled 0.003 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 24 500 (2500) N (kg) 425 g A-24 (K-PUK) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 28-Apr-16 Document Number: 93714 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series ST1000C..K series ( single side cooled) R thJ-hs (DC ) = 0.042 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 80 180° 70 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) 130 Vishay Semiconductors 130 ST1000C..K series (double side cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Period 80 30˚ 60˚ 70 90˚ 120˚ 60 180˚ 50 DC 40 0 400 800 1200 1600 2000 2400 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 ST1000C..K Series ( single side cooled) R thJ-hs (DC ) = 0.042 K/W 120 110 Conduction Period 100 90 30° 60° 90° 80 120° 180° DC 70 0 200 400 600 800 1000 Maximum Average On-State Power Loss (W) Average On-State Current (A) 3000 180˚ 120˚ 90˚ 60˚ 30˚ 2500 2000 RMS limit 1500 1000 Conduction Angle ST1000C..K series TJ = 125˚C 500 0 0 400 800 1200 1600 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 ST1000C..K Series (double side cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 30˚ 80 60˚ 90˚ 70 120˚ 60 180˚ 50 40 0 400 800 1200 1600 Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 4000 DC 180˚ 120˚ 90˚ 60˚ 30˚ 3500 3000 2500 RMS limit 2000 1500 Conduction period 1000 ST1000C..K series TJ = 125 ˚C 500 0 0 500 1000 1500 2000 2500 Average On-State Current (A) Average On-State Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 28-Apr-16 Document Number: 93714 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series 18 000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 ˚C 16 000 at 60 Hz 0.0083 s at 50 Hz 0.0100 s 14 000 12 000 10 000 8000 ST1000C..K series 6000 1 10 22 000 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 20 000 18 000 16 000 14 000 12 000 10 000 8000 ST1000C..K series 6000 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-State Current (A) 10 000 TJ = 25 ˚C TJ = 125 ˚C 1000 ST1000C..K series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-State Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Steady state value R thJ-hs = 0.42 K/W (single side cooled) R thJ-hs = 0.21 K/W (double side cooled) 0.01 (DC operation) 0.001 0.001 ST1000C..K series 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 28-Apr-16 Document Number: 93714 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1000C..K Series www.vishay.com (1) PGM = 16 W, tp = 4 ms (2) PGM = 30 W, tp = 2 ms (3) PGM = 60 W, tp = 1 ms Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 Ω; tr ± 1 µs b) Recommended load line for >= 30 % rated di/dt : 10 V, 10 Ω tr <= 1 µs 10 (a) (b) IGD 0.1 0.001 T j = 25 °C VGD T j = -40 °C 1 T j = 125 °C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) (2) (3) Frequency limited by PG(AV) Device: ST100C..K series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS1 2 100 0 C 24 K 1 - 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case A-24 (K-PUK) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: none = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 Revision: 28-Apr-16 Document Number: 93714 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors A-24 (K-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places Pin receptable AMP. 60598-1 27.5 (1.08) MAX. 67 (2.6) DIA. MAX. 20° ± 5° 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95081 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000