VS-ST180SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 200 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) • Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS IT(AV) 200 A VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V, 2000 V VTM 1.75 V IGT 150 mA TJ -40 °C to 125 °C Package TO-209AB (TO-93) Diode variation Single SCR • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) ITSM I2t A 85 °C 314 A 5000 60 Hz 5230 50 Hz 125 60 Hz 114 Typical TJ UNITS 200 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST180S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 30 Revision: 11-Mar-14 Document Number: 94397 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave 314 No voltage reapplied 100 % VRRM reapplied 4200 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t °C 5000 t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms No voltage reapplied 5230 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 125 114 88 t = 0.1 to 10 ms, no voltage reapplied 1250 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14 Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse 1.75 VTM IH Maximum (typical) latching current IL TJ = TJ maximum, anode supply 12 V resistive load kA2s 81 VT(TO)1 Maximum on-state voltage A 4400 Low level value of threshold voltage Maximum holding current UNITS 200 DC at 76 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 11-Mar-14 Document Number: 94397 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 °C TJ = - 40 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = 25 °C TJ = 125 °C V 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 TJ = TJ maximum A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 °C DC gate current required to trigger MAX. mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range SYMBOL TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs DC operation 0.105 Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) °C K/W Mounting torque, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheeet N·m (lbf in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.015 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 94397 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180SPbF Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 130 ST180S Series RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 30° 60° 90° 120° 90 180° 80 0 40 80 120 160 200 240 130 ST180S Series R thJC (DC) = 0.105 K/ W 120 110 Conduc tion Period 100 90 30° 80 120° 180° DC 70 0 50 100 150 200 250 300 350 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 08 0. W K/ K/ W K/ W ta el -D RMSLimit 0.4 K/ W 150 Conduc tion Angle 0.5 K/ W 0.8 K/ W 1.2 K /W 100 ST180SSeries TJ = 125°C 50 R 200 = 0.3 K/ W A 0. 2 W K/ 250 0. 16 hS Rt 180° 120° 90° 60° 30° 300 1 0. Maximum Average On-state Power Loss (W) 60° 90° 0 0 40 80 120 160 200 240 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 500 DC 180° 120° 90° 60° 30° 450 400 350 300 R 0. 1 0. 16 250 RMSLimit 200 Conduction Period 150 100 ST180SSeries TJ = 125°C 50 th SA = K/ W 0. 08 K/ W 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.5 K/ W 0.8 K /W K/ W -D el ta R 1.2 K/ W 0 0 40 80 120 160 200 240 280 320 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 11-Mar-14 Document Number: 94397 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180SPbF Series Vishay Semiconductors 4800 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 4400 Initial TJ = 125°C @ 60 Hz 0.0083 s 4000 @ 50 Hz 0.0100 s 3600 3200 2800 2400 ST180SSeries 2000 1 10 100 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST180SSeries 2000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST180SSeries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 ST180S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 11-Mar-14 Document Number: 94397 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST180SPbF Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (b) VGD IGD 0.1 0.001 (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, = 4ms = 2ms = 1ms = 0.66ms (a) (1) Device: ST180S Series 0.01 tp tp tp tp Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 0.1 (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 18 0 S 20 P 0 - PbF 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4"-16UNF2A threads 8 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 9 - 1 = Fast-on terminals (gate and auxiliary cathode leads) V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) 10 - None = Standard production PbF = Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95082 Revision: 11-Mar-14 Document Number: 94397 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) 7) MI N. 4 (0.16) MAX. 19 (0.75) MAX. (0. 3 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.0006 s.i.) Red cathode White gate Red shrink 38.5 (1.52) MAX. 16 (0.63) MAX. White shrink 220 (8.66) ± 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) ± 10 (0.39) 22 Flexible leads C.S. 25 mm2 (0.039 s.i.) ( 0. 86 )M 9.5 4.3 (0.17) DIA. IN . Glass metal seal Fast-on terminals AMP. 280000-1 REF-250 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. 19 (0.75) MAX. )M IN . 4 (0.16) MAX. 37 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.006 s.i.) Red cathode White gate White shrink 16 (0.63) MAX. 38.5 (1.52) MAX. Red shrink . IN (0. 22 220 (8.66) ± 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) ± 10 (0.39) Flexible leads C.S. 25 mm2 (0.039 s.i.) 86 9.5 (0. 4.3 (0.17) DIA. )M Ceramic housing 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. Note (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Revision: 05-Mar-12 Document Number: 95082 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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