Data Sheet

BF991
N-channel dual-gate MOS-FET
Rev. 03 — 20 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
FEATURES
DESCRIPTION
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
• VHF applications such as:
d
handbook, halfpage
4
3
– VHF television tuners and FM tuners
g2
– Professional communication equipment.
g1
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
1
2
s,b
source
Top view
MAM039
Marking code: %MA.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current
−
20
mA
Ptot
total power dissipation
−
200
mW
Tj
junction temperature
−
150
°C
up to Tamb = 60 °C
14
−
mS
Cig1-s
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.1
−
pF
Crs
feedback capacitance
f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 20
−
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt;
ID = 10 mA; VDS = 10 V; VG2-S = 4 V
2
dB
Y fs
transfer admittance
f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V
Rev. 03 - 20 November 2007
1
2 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current (DC)
−
20
mA
ID(AV)
average drain current
−
20
mA
IG1-S
gate 1-source current
−
±10
mA
IG2-S
gate 2-source current
−
±10
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Tamb = 60 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
Rth j-a
in free air; note 1
VALUE
UNIT
460
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MGE792
200
handbook, halfpage
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
Rev. 03 - 20 November 2007
3 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
UNIT
IG1-SS
gate 1 cut-off current
IG2-SS
gate 2 cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
−
50
nA
IDSS
drain current
VDS = 10 V; VG1-S = 0; VG2-S = 4 V
4
25
mA
V(BR)G1-SS
gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S = VDS = 0
6
20
V
V(BR)G2-SS
gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S = VDS = 0
6
20
V
V(P)G1-S
gate 1-source cut-off voltage
ID = 20 µA; VDS = 10 V; VG2-S = 4 V
−
−2.5
V
V(P)G2-S
gate 2-source cut-off voltage
ID = 20 µA; VDS = 10 V; VG1-S = 0
−
−2.5
V
VG1-S = 5 V; VG2-S = VDS = 0
50
nA
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
transfer admittance
f = 1 kHz
10
14
−
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
2.1
−
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
1
−
pF
Crs
feedback capacitance
f = 1 MHz
−
20
−
fF
Cos
output capacitance
f = 1 MHz
−
1.1
−
pF
F
noise figure
f = 100 MHz; GS = 1 mS; BS = BSopt
−
0.7
1.7
dB
f = 200 MHz; GS = 2 mS; BS = BSopt
−
1
2
dB
f = 100 MHz; GS = 1 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt
−
29
−
dB
f = 200 MHz; GS = 2 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt
−
26
−
dB
Y fs
Gtr
transducer gain; note 1
Note
1. Crystal mounted in a SOT103 package.
Rev. 03 - 20 November 2007
4 of 7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
PACKAGE OUTLINE
handbook, full pagewidth
3.0
2.8
0.150
0.090
0.75
0.60
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
1.4
1.2
2.5
max
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
See also Soldering recommendations.
Fig.3 SOT143.
Rev. 03 - 20 November 2007
5 of 7
BF991
NXP Semiconductors
N-channel dual-gate MOS-FET
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 03 - 20 November 2007
6 of 7
BF991
NXP Semiconductors
N-channel dual-gate MOS-FET
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BF991_N_3
20071120
Product data sheet
-
BF991_2
•
Modifications:
Fig. 1 on page 2; Figure note changed
BF991_2
19910401
Product specification
-
BF991_SF_1
BF991_SF_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 November 2007
Document identifier: BF991_N_3
Similar pages