Data Sheet

BF908; BF908R
Dual-gate MOS-FETs
Rev. 03 — 14 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
FEATURES
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
d
handbook, halfpage
4
3
g2
• Low noise gain controlled amplifier up to 1 GHz.
g
1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
1
2
s,b
Top view
MAM039
BF908 marking code: %M1.
DESCRIPTION
Fig.1
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
Simplified outline (SOT143) and
symbol; BF908.
d
handbook, halfpage
3
CAUTION
4
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
g2
g1
PINNING
2
PIN
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
1
s,b
Top view
MAM040
BF908R marking code: %M2.
Fig.2
Simplified outline (SOT143R) and
symbol; BF908R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
12
V
ID
drain current
−
−
40
mA
Ptot
total power dissipation
−
−
200
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
2.4
3.1
4
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
pF
F
noise figure
f = 800 MHz
−
1.5
2.5
dB
Rev. 03 - 14 November 2007
2 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
12
V
ID
drain current
−
40
mA
±IG1
gate 1 current
−
10
mA
±IG2
gate 2 current
−
10
mA
Ptot
total power dissipation
see Fig.3; note 1
BF908
up to Tamb = 50 °C
−
200
mW
BF908R
up to Tamb = 40 °C
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board.
MRC275
250
handbook, halfpage
P
tot
(mW)
200
BF908
150
BF908R
100
50
0
0
50
100
150
200
o
Tamb ( C)
Fig.3 Power derating curves.
Rev. 03 - 14 November 2007
3 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
BF908
500
K/W
BF908R
550
K/W
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
8
−
20
V
±V(BR)G2-SS gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
8
−
20
V
−V(P)G1-S
gate 1-source cut-off voltage
VG2-S = 4 V; VDS = 8 V; ID = 20 µA −
−
2
V
−V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 4 V; VDS = 8 V; ID = 20 µA −
−
1.5
V
IDSS
drain-source current
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
3
15
27
mA
±IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
−
50
nA
±IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
−
50
nA
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
yfs
forward transfer admittance
pulsed; Tj = 25 °C; f = 1 MHz
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.4
3.1
4
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
1.8
2.5
pF
Cos
output capacitance
f = 1 MHz
1.2
1.7
2.2
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt
−
0.6
1.2
dB
f = 800 MHz; GS = GSopt; BS = BSopt
−
1.5
2.5
dB
Rev. 03 - 14 November 2007
4 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
MRC282
MRC281
40
handbook, halfpage
VG2-S = 4 V
ID
(mA)
3V
30
30
handbook, halfpage
VG1-S = 0.3 V
ID
(mA)
0.2 V
2V
20
0.1 V
1.5 V
1V
20
0V
0.5 V
10
−0.1 V
10
−0.2 V
−0.3 V
0V
0
−0.6
−0.4
0
−0.2
0
0.2
0.4
0
0.6
4
8
12
16
VDS (V)
VG1-S (V)
VDS = 8 V; Tj = 25 °C.
VG2-S = 4 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
MRC280
50
4V
Yfs
(mS)
40
3V
2V
Fig.5 Output characteristics; typical values.
MRC276
60
Yfs
(mS)
1.5 V
40
30
1V
20
20
0.5 V
10
VG2-S = 0 V
0
0
0
5
10
15
20
VDS = 8 V; Tj = 25 °C.
Fig.6
40
25
I D (mA)
0
40
80
120
160
T j (o C)
VDS = 8 V; VG2-S = 4 V; ID = 15 mA.
Forward transfer admittance as a function
of drain current; typical values.
Fig.7
Rev. 03 - 14 November 2007
Forward transfer admittance as a function
of junction temperature; typical values.
5 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
Table 1
f
(MHz)
BF908; BF908R
Scattering parameters
s11
MAGNITUDE
(ratio)
s21
ANGLE
(deg)
MAGNITUDE
(ratio)
s12
ANGLE
(deg)
MAGNITUDE
(ratio)
s22
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
50
0.998
−5.1
3.537
173.5
0.001
98.2
0.996
−2.4
100
0.994
−10.4
3.502
167.7
0.001
88.8
0.994
−4.9
200
0.979
−20.8
3.450
154.9
0.003
74.6
0.987
−9.5
300
0.962
−30.3
3.318
143.7
0.004
69.5
0.983
−13.9
400
0.939
−40.1
3.234
131.9
0.005
65.6
0.980
−18.5
500
0.914
−49.1
3.093
120.7
0.006
64.4
0.974
−22.8
600
0.892
−57.1
2.912
111.1
0.005
63.1
0.969
−27.0
700
0.865
−64.4
2.774
101.0
0.005
65.2
0.966
−31.2
800
0.837
−71.6
2.616
91.4
0.004
70.8
0.965
−35.4
900
0.811
−78.1
2.479
81.9
0.004
87.4
0.965
−39.4
1000
0.785
−84.5
3.329
72.5
0.003
108.0
0.966
−43.7
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
50
0.998
−5.3
3.983
173.4
0.001
95.5
0.994
−2.4
100
0.994
−10.9
3.943
167.5
0.001
93.6
0.991
−5.0
200
0.976
−21.6
3.878
154.7
0.003
74.3
0.984
−9.7
300
0.957
−31.7
3.722
143.3
0.004
70.0
0.979
−14.2
400
0.934
−41.7
3.614
131.6
0.005
63.5
0.975
−18.8
500
0.907
−51.1
3.446
120.4
0.006
62.2
0.969
−23.2
600
0.885
−59.1
3.240
110.9
0.005
59.6
0.964
−27.4
700
0.851
−66.8
3.072
100.9
0.005
64.8
0.961
−31.6
800
0.826
−73.9
2.891
91.3
0.004
67.8
0.959
−35.9
900
0.797
−80.7
2.733
81.9
0.004
85.0
0.958
−40.0
1000
0.773
−87.0
2.569
72.8
0.004
102.9
0.958
−44.2
Table 2
Noise data
f
(MHz)
Γopt
Fmin
(dB)
rn
(ratio)
(deg)
0.720
56.7
0.580
0.700
59.2
0.520
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
800
1.50
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
800
1.50
Rev. 03 - 14 November 2007
6 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
PACKAGE OUTLINES
handbook, full pagewidth
3.0
2.8
0.150
0.090
0.75
0.60
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
2.5
max
1.4
1.2
o
10
max
1
1.1
max
o
30
max
0.88
2
0
0.1
0.48
0.1 M A B
0
0.1
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.40
0.25
B
1.9
3
4
0.1
max
o
10
max
0.2 M A
A
1.4
1.2
o
2.5
max
10
max
2
1.1
max
o
30
max
1
0.48
0.38
0.88
0.78
MBC844
1.7
0.1 M B
TOP VIEW
Dimensions in mm.
Fig.9 SOT143R.
Rev. 03 - 14 November 2007
7 of 9
BF908; BF908R
NXP Semiconductors
Dual-gate MOS-FETs
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
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Notice: All referenced brands, product names, service names and trademarks
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 03 - 14 November 2007
8 of 9
BF908; BF908R
NXP Semiconductors
Dual-gate MOS-FETs
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BF908-R_N_3
20071114
Product data sheet
-
BF908-R_2
•
Modifications:
Fig. 1 and 2 on page 2; Figure note changed
BF908-R_2
19960730
Product specification
-
BF908R_1
BF908R_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 November 2007
Document identifier: BF908-R_N_3
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