DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. APPLICATIONS • RF applications such as: d handbook, halfpage 4 3 – UHF television tuners g2 – Professional communication equipment. g1 PINNING PIN SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 1 2 s,b source Top view MAM039 Marking code: MHp. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 30 mA Ptot total power dissipation − 200 mW Tj junction temperature − 150 °C up to Tamb = 60 °C − mS Cig-1s input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 2.3 2.6 pF Crs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 25 − fF F noise figure f = 200 MHz GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 15 V; VGS−2 = 4 V − dB Y fs April 1991 transfer admittance f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2−S = 4 V 2 18 1 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 30 mA ID(AV) average drain current − 30 mA IG1-S gate 1 source − ±10 mA IG1-S gate 2 source − ±10 mA Ptot total power dissipation − 200 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 150 °C up to Tamb = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to ambient Rth j-a in free air; note 1 Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. MGE792 200 handbook, halfpage Ptot (mW) 100 0 0 100 Tamb (°C) 200 Fig.2 Power derating curve. April 1991 3 VALUE UNIT 460 K/W Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. VG1-S = ±5 V; VG2-S = VDS = 0 − MAX. ±50 UNIT IG1−SS gate cut-off current nA IG2−SS gate cut-off current VG2-S = ±5 V; VG1-S = VDS = 0 − ±50 nA V(BR)G1-SS gate-source breakdown voltage IG1-S = ±10 mA; VG2-S = VDS = 0 ±6 ±20 V V(BR)G2-SS gate-source breakdown voltage IG2-S = ±10 mA; VG1-S = VDS = 0 ±6 ±20 V IDSS drain current VDS = 15 V; VG1-S = 0; VG2-S = 4 V 4 20 mA V(P)G1-S gate-source cut-off current ID = 20 µA; VDS = 15 V; VG2-S = 4 V − −2.5 V V(P)G2-S gate-source cut-off current ID = 20 µA; VDS = 15 V; VG1-S = 0 − −2 V DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL Y fs PARAMETER CONDITIONS MIN. TYP. mS 2.3 2.6 pF 1.2 − pF − 25 − fF f = 1 MHz − 0.8 − pF f = 200 MHz; GS = 2 mS; BS = BSopt − f = 1 kHz 15 18 Cig1-s input capacitance at gate 1 f = 1 MHz − Cig2-s input capacitance at gate 2 f = 1 MHz − Crs feedback capacitance f = 1 MHz Cos output capacitance F noise figure April 1991 power gain UNIT − transfer admittance GP MAX. 1 − dB f = 800 MHz; GS = 3.3 mS; BS = BSopt − 1.8 − dB f = 200 MHz; GS = 2 mS; BS = BSopt; GL = 0.5 mS; BL = BLopt − 25 − dB f = 800 MHz; GS = 3.3 mS; BS = BSopt; GL = 1 mS; BL = BLopt − 18 − dB 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. See also Soldering recommendations. Fig.3 SOT143. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 5