Data Sheet

BFQ591
NPN 7 GHz wideband transistor
Rev. 04 — 2 October 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
FEATURES
PINNING
• High power gain
PIN
• Low noise figure
1
emitter
• High transition frequency
2
collector
• Gold metallization ensures excellent reliability.
3
base
DESCRIPTION
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
3
2
1
MARKING
TYPE NUMBER
MARKING CODE
BFQ591
Fig.1 Simplified outline (SOT89).
BCp
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
200
mA
W
Ptot
total power dissipation
Ts ≤ 90 °C; note 1
−
−
2.25
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
−
0.8
−
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
|s21|2
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
10
−
dB
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 04 - 2 October 2007
2 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
−
2.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
Ts ≤ 90 °C; note 1
VALUE
UNIT
38
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 04 - 2 October 2007
3 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage IC = 0.1 mA; IE = 0
−
−
20
V
V(BR)CES
collector-emitter breakdown
voltage
IC = 0.1 mA; IB = 0
−
−
15
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
−
−
3
V
ICBO
collector-base leakage current
IE = 0; VCB = 10
−
−
100
nA
hFE
DC current gain
IC = 70 mA ; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC = 0; VCB = 12 V; f = 1 MHz
−
0.8
−
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
7
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
Tamb = 25 °C
−
11
−
dB
f = 900 MHz
−
5.5
−
dB
|s21|2
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
−
10
−
dB
Vo
output voltage
note 2
−
700
−
mV
f = 2 GHz
Notes
2
s 21
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB .
2
2
( 1 – s 11 ) ( 1 – s 22 )
2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured at f(p+q+r) = 793.25 MHz.
Rev. 04 - 2 October 2007
4 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
MLD796
3
MRA749
250
handbook, halfpage
handbook, halfpage
hFE
Ptot
(W)
200
2
150
100
1
50
0
50
0
100
150
Ts (°C)
200
0
10−2
10−1
1
10
IC (mA)
102
VCE = 12 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLD797
1.2
MLD798
8
handbook, halfpage
handbook, halfpage
Cre
fT
(GHz)
(pF)
6
0.8
4
0.4
2
0
0
4
0
8
12
VCB (V)
10
1
16
IC = 0; f = 1 MHz.
VCE = 12 V; f = 1 GHz.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
Rev. 04 - 2 October 2007
IC (mA)
102
Transition frequency as a function of
collector current.
5 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
MLD799
BFQ591
gain
10
gain
(dB)
20
(dB)
8
15
6
25
handbook, halfpage
MLD800
handbook, halfpage
MSG
GUM
Gmax
GUM
10
4
5
2
0
0
0
40
80
IC (mA)
40
0
120
VCE = 12 V; f = 900 MHz.
VCE = 12 V; f = 2 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
80
IC (mA)
120
Gain as a function of collector current;
typical values.
MLD801
40
handbook, halfpage
gain
(dB)
30
MSG
20
GUM
Gmax
10
MSG
0
10
102
103
f (MHz)
104
IC = 70 mA; VCE = 12 V.
Fig.8
Gain as a function of frequency; typical
values.
Rev. 04 - 2 October 2007
6 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
MLD802
−30
BFQ591
MLD803
−30
d2
handbook, halfpage
handbook, halfpage
dim
(dB)
(dB)
−40
−40
−50
−50
−60
−60
−70
−70
−80
0
40
80
IC (mA)
120
0
40
80
IC (mA)
120
Vo = 700 mV; VCE = 12 V; Tamb = 25 °C; f(p+q+r) = 793.25 MHz.
Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz.
Fig.9
Fig.10 Second order intermodulation distortion as
function of collector current; typical values.
Intermodulation distortion as function of
collector current; typical values.
Rev. 04 - 2 October 2007
7 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
SPICE parameters for the BFQ591 die.
SEQUENCE No.
PARAMETER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJ
TR
CJS
VJS
MJS
FC
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VALUE
1.341
123.5
.988
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
1.000
5.00
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
UNIT
fA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
pF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ps
F
mV
−
−
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50;QLE = 50;QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.11 Package equivalent circuit SOT89.
List of components (see Fig.11)
DESIGNATION
VALUE
UNIT
Cbe
16
fF
Ccb
150
fF
Cce
150
fF
L1
1
nH
L2
0.01
nH
L3
1
nH
LB
1.2
nH
LE
1.2
nH
Note
1. These parameters have not been extracted, the
default values are shown.
Rev. 04 - 2 October 2007
8 of 11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
Rev. 04 - 2 October 2007
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
9 of 11
BFQ591
NXP Semiconductors
NPN 7 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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malfunction of a NXP Semiconductors product can reasonably be expected to
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NXP Semiconductors accepts no liability for inclusion and/or use of NXP
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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Notice: All referenced brands, product names, service names and trademarks
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 2 October 2007
10 of 11
BFQ591
NXP Semiconductors
NPN 7 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFQ591_N_4
20071002
Product data sheet
-
BFQ591_3
Modifications:
•
Fig. 1 and package outline updated
BFQ591_3
20020204
Product specification
BFQ591_N_2
(9397 750 09252)
20020102
Preliminary specification
BFQ591_N_1
(9397 750 09013)
20011203
Preliminary specification
-
BFQ591_N_2
BFQ591_N_1
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 October 2007
Document identifier: BFQ591_N_4
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