2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range Value Units 30 25 35 30 4.5 V V V V V 100 mA -55 to +150 °C 2N5088 2N5089 2N5088 2N5089 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N5088 2N5089 625 5.0 83.3 *MMBT5088 *MMBT5089 350 2.8 200 357 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 50 50 50 100 V V V V nA nA nA nA OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 IC = 100 µA, IE = 0 5088 5089 5088 5089 5088 5089 30 25 35 30 5088 5089 5088 5089 5088 5089 300 400 350 450 300 400 ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 5.0 V IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V* 900 1200 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance IC = 500 µA,VCE = 5.0 mA, f = 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz hfe Small-Signal Current Gain NF Noise Figure IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 100 µA, VCE = 5.0 V, RS = 10 kΩ, f = 10 Hz to 15.7 kHz 5088 5089 5088 5089 50 350 450 MHz 4.0 pF 10 pF 1400 1800 3.0 2.0 dB dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 3 (continued) V CE = 5.0 V 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 β = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) 1200 Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 β = 10 0.2 125 °C 0.15 25 °C 0.1 - 40 °C 0.05 VBEON- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 V CE = 5.0 V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 10 VCB = 45V 1 0.1 25 100 Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( ° C) 150 40 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz 4 3 C te 2 C ob 1 ° 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 5 V CE = 5.0 V 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMPERATURE ( °C) 4 BANDWIDTH = 15.7 kHz I C = 30 µA 2 1 I C = 10 µA 0 150 1,000 P D - POWER DISSIPATION (mW) I C = 1.0 mA, R S = 500 Ω I C = 1.0 mA, R S = 5.0 kΩ 2 V CE = 5.0V 0 0.0001 0.01 0.1 1 f - FREQUENCY (MHz) 20,000 50,000 100,000 TO-92 500 10 100 SOT-23 375 250 125 0 0.001 10,000 625 I C = 100 µA, R S = 10 kΩ 4 5,000 Power Dissipation vs Ambient Temperature I C = 200 µA, R S = 10 kΩ 6 2,000 R S - SOURCE RESISTANCE (Ω ) 10 8 3 I C = 100 µA 3 Noise Figure vs Frequency NF - NOISE FIGURE (dB) 1 10 I C - COLLECTOR CURRENT (mA) Wideband Noise Frequency vs Source Resistance NF - NOISE FIGURE (dB) CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C 0 10 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier 0 25 50 75 100 TEMPERATURE ( o C) 125 150 (continued) Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure 10,000 R S - SOURCE RESISTANCE ( Ω ) R S - SOURCE RESISTANCE ( Ω ) Contours of Constant Narrow Band Noise Figure 3.0 dB 5,000 4.0 dB 2,000 6.0 dB 1,000 8.0 dB 500 V CE = 5.0 V 10 dB f = 100 Hz BANDWIDTH = 20 Hz 200 12 dB 14 dB 100 1 10,000 5,000 2.0 dB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz 200 1 1,000 10000 1.0 dB 2.0 dB 3.0 dB 1000 4.0 dB 500 V CE = 5.0V f = 10kHz BANDWIDTH = 2.0kHz 200 100 1 6.0 dB 10 100 I C - COLLECTOR CURRENT ( µ A) 10 100 I C- COLLECTOR CURRENT ( µ A) 1,000 Contours of Constant Narrow Band Noise Figure 8.0 dB 1000 R S - SOURCE RESISTANCE (Ω ) R S - SOURCE RESISTANCE (Ω ) Contours of Constant Narrow Band Noise Figure 2000 8.0 dB 100 10 100 I C - COLLECTOR CURRENT ( µ A) 5000 6.0 dB 10000 5000 2000 1000 2.0 dB 3.0 dB VCE = 4.0 dB 5.0V f = 1.0 MHz 200 BANDWIDTH 7.0 dB = 200kHz 8.0 dB 100 0.01 0.1 1 I C - COLLECTOR CURRENT ( µ A) 500 5.0 dB 6.0 dB 10 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA f = 1.0kHz T A = 25°C h fe 0 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C) 1.4 1.5 1.4 1.3 1.2 h ie VCE = 5.0V f = 1.0kHz I C = 1.0mA h re h fe h oe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.5 -100 h ie -50 0 50 100 T J - JUNCTIO N TEMP ERATURE (° C) Typical Common Emitter Characteristics CHARACTERISTICS RELATIVE TO VALUE(I C =1mA) CHAR ACTER ISTI CS RELATI VE TO VALUE(VCE =5V) Typical Common Emitter Characteristics (f = 1.0 kHz) 150 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier 100 f = 1.0kHz h oe 10 h ie and h re h re 3 1 h oe h fe h ie 0.1 0.01 0.1 0.2 h fe 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G