Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50
UHF power transistor
Product specification
April 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
• SMD encapsulation
• Gold metallization ensures
excellent reliability.
BLT50
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit
(note 1).
MODE OF OPERATION
c.w. narrow band
DESCRIPTION
f (MHz) VCE (V)
PL (W)
Gp (dB)
ηc (%)
470
1.2
> 10
> 55
7.5
Note
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
communications band.
1. Ts = temperature at soldering point of collector tab.
PIN CONFIGURATION
4
age
PINNING - SOT223
c
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
handbook, halfpage
b
MBB012
1
2
Top view
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
April 1991
2
e
Philips Semiconductors
Product specification
UHF power transistor
BLT50
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
3
V
IC, IC(AV)
collector current
DC or average value
−
500
mA
ICM
collector current
peak value
f > 1 MHz
−
1.5
A
Ptot
total power dissipation
f > 1 MHz;
Ts = 103 °C
(note 1)
−
2
W
Tstg
storage temperature range
−65
150
°C
Tj
operating junction temperature
−
175
°C
Note
1. Ts = temperature at soldering point of collector tab.
MEA217
1
handbook, halfpage
IC
(A)
0.5
0.2
0.1
1
10
VCE (V)
102
Ts = 103 °C.
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL
Rth j-s(DC)
April 1991
PARAMETER
CONDITIONS
from junction to soldering point
3
Ptot = 2 W; Ts = 103 °C
MAX.
36
UNIT
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT50
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
IC = 5 mA
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base;
IC = 10 mA
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 1 mA
3
−
−
V
ICES
collector-emitter leakage current
VBE = 0;
VCE = 10 V
−
−
250
µA
hFE
DC current gain
VCE = 5 V;
IC = 300 mA
25
−
−
ESBR
second breakdown energy
L = 25 mH;
RBE = 10 Ω;
f = 50 Hz
0.55
−
−
mJ
Cc
collector capacitance
VCB = 7.5 V;
IE = Ie = 0;
f = 1 MHz
−
4.7
6
pF
Cre
feedback capacitance
VCE = 7.5 V;
IC = 0;
f = 1 MHz
−
2.9
4.5
pF
MEA218
handbook,10
halfpage
Cc
(pF)
8
6
4
2
0
0
2
4
6
8
10
VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.3
April 1991
Collector capacitance as a function of
collector-base voltage, typical values.
4
Philips Semiconductors
Product specification
UHF power transistor
BLT50
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit.
MODE OF
OPERATION
f (MHz)
c.w. narrow band
470
VCE (V)
PL (W)
7.5
1.2
ηc (%)
Gp (dB)
> 10
typ. 11.2
> 55
typ. 65
MEA219
MEA220
2
handbook, halfpage
handbook,16
halfpage
Gp
(dB)
100
PL
(W)
η
12
(%)
Gp
80
8
1
η
60
4
40
0
0.6
1.0
1.4
1.8
0
2.2
0
100
PL (W)
VCE = 7.5 V; f = 470 MHz.
Fig.4
200
VCE = 7.5 V; f = 470 MHz.
Gain and efficiency as functions of load
power, typical values.
Fig.5
Ruggedness in class-B operation
The BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and Ts ≤ 60 °C, where Ts is the temperature at the
soldering point of the collector tab.
April 1991
PD (mW)
5
Load power as a function of drive power,
typical values.
Philips Semiconductors
Product specification
UHF power transistor
C1
handbook, full pagewidth
50 Ω
BLT50
,,, ,,,
L4
L1
C4
L5
50 Ω
TUT
C2
L2
L6
C3
L7
+VCC
R1
R2
L3
C5
C6
C7
MBA576
Fig.6 Class-B test circuit at f = 470 MHz.
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
film dielectric trimmer
1.4 to 5.5 pF
2222 809 09004
C2
film dielectric trimmer
1.4 to 5.5 pF
2222 809 09001
C3
film dielectric trimmer
2 to 9 pF
2222 809 09002
C4
film dielectric trimmer
2 to 9 pF
2222 809 09005
C5
multilayer ceramic chip capacitor
(note 1)
100 pF
C6
multilayer ceramic chip capacitor
(note 1)
1 nF
C7
63 V electrolytic capacitor
2.2 µF
L1
stripline (note 2)
50 Ω
L2
5 turns enamelled 0.4 mm copper
wire
L3, L7
grade 3B1 Ferroxcube wideband RF
choke
L4
stripline (note 2)
L5
1 turn enamelled 1.4 mm copper wire 5 nH
int. dia. 4 mm
L6
3 turns enamelled 0.4 mm copper
wire
int. dia. 3 mm
R1, R2
0.25 W metal film resistor
54 mm × 4.7 mm
int. dia. 3 mm
4312 020 36640
50 Ω
36 mm × 4.7 mm
10 Ω, 5%
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄16 inch.
April 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLT50
handbook, full pagewidth
VCC
L7
C7
L3
C6
C5
R2
R1
C1
L6
L2
C2
C3
C4
L4
L1
L5
MBA575
140 mm
handbook, full pagewidth
strap
strap
80 mm
rivets
(14x)
strap
mounting
screws
(8x)
strap
MBA574
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.7 Component layout for 470 MHz class-B test circuit.
April 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLT50
MEA221
MEA222
4
handbook, halfpage
handbook,20
halfpage
Zi
(Ω)
ZL
(Ω)
3
15
ri
2
XL
10
xi
RL
1
5
0
350
550
450
f (MHz)
0
350
650
450
550
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.8
Fig.9
Input impedance (series components) as a
function of frequency, typical values.
f (MHz)
650
Load impedance (series components) as a
function of frequency, typical values.
MEA223
handbook,16
halfpage
Gp
(dB)
12
handbook, halfpage
8
Zi
4
ZL
MBA451
0
350
450
550
f (MHz)
650
Class-B operation; VCE = 7.5 V; PL = 1.2 W.
Fig.10 Definition of transistor impedance.
April 1991
Fig.11 Power gain as a function of frequency,
typical values.
8
Philips Semiconductors
Product specification
UHF power transistor
BLT50
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
April 1991
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLT50
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
10
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