Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR951
UHF wideband transistor
Product specification
Supersedes data of 1998 Jun 09
File under Discrete Semiconductors, SC14
1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
FEATURES
PINNING - SOT23
• Small size
PIN
• Low noise
1
base
• Low distortion
2
emitter
• High gain
3
collector
DESCRIPTION
• Gold metallization ensures excellent reliability.
APPLICATIONS
handbook, halfpage
3
3
• Communication and instrumentation systems.
1
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
1
2
2
Top view
MAM255
Marking code: W2.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.4
−
pF
fT
transition frequency
IC = 30 mA; VCE = 6 V; fm = 1 GHz
8
−
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 6 V; Tamb = 25 °C;
f = 1 GHz
14
−
dB
F
noise figure
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
1.3
−
dB
Ptot
total power dissipation
Ts = 60 °C; note 1
−
365
mW
Rth j-s
thermal resistance from junction to
soldering point
Ptot = 365 mW
−
315
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10
2
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
1.5
V
IC
collector current (DC)
−
100
mA
IC(AV)
average collector current
−
100
mA
Ptot
total power dissipation
−
365
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
Ptot = 365 mW; Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10
3
VALUE
UNIT
315
K/W
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 100 µA; IB = 0
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
1.5
−
−
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
50
100
200
IC = 15 mA; VCE = 6 V
−
100
−
AC characteristics
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.4
−
pF
fT
transition frequency
IC = 30 mA; VCE = 6 V; fm = 1 GHz
−
8
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 30 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
14
−
dB
IC = 30 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
8
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.3
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
2
−
dB
F
noise figure
Note
S 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------dB
( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Aug 10
4
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
MDA887
400
MDA888
120
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
300
80
200
40
100
0
0
0
50
100
150
Ts (°C)
200
10
0
20
30
50
40
IC (mA)
VCE = 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
MDA889
0.8
DC current gain as a function of collector
current; typical values.
MDA890
10
handbook, halfpage
handbook, halfpage
fT
(GHz)
Cre
(pF)
8
0.6
6
0.4
4
0.2
2
0
0
0
4
8
VCB (V)
12
0
10
20
IC = 0; f = 1 MHz.
VCE = 6 V; f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
1998 Aug 10
5
30
IC (mA)
40
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
MDA891
20
gain
MDA892
50
gain
handbook, halfpage
handbook, halfpage
(dB)
MSG
16
(dB)
Gmax
40
GUM
12
30
8
20
4
10
GUM
MSG
Gmax
MSG
0
10
0
0
10
20
30
IC (mA)
40
102
f = 1 GHz; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MDA893
50
gain
(dB)
(dB)
40
GUM
104
MDA894
50
gain
handbook, halfpage
MSG
f (MHz)
Gain as a function of frequency; typical
values.
handbook, halfpage
40
103
MSG
GUM
30
30
20
20
Gmax
Gmax
10
10
MSG
0
10
102
103
f (MHz)
MSG
0
10
104
102
IC = 15 mA; VCE = 6 V.
IC = 30 mA; VCE = 6 V.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1998 Aug 10
6
103
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
MDA895
4
F
(dB)
MDA896
4
handbook, halfpage
handbook, halfpage
(1)
F
(dB)
3
3
(1)
(2)
(2)
(3)
2
2
(3)
(5)
(4)
1
1
0
10−1
VCE = 6 V.
(1) f = 2000 MHz.
(2) f = 1500 MHz.
1
10
IC (mA)
0
102
102
(3) f = 1000 MHz.
(4) f = 900 MHz.
(5) f = 500 MHz.
VCE = 6 V.
(1) IC = 30 mA.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
1998 Aug 10
103
f (MHz)
104
(2) IC = 15 mA.
(3) IC = 5 mA.
Fig.11 Minimum noise figure as a function of
frequency, typical values.
7
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
APPLICATION INFORMATION
SPICE parameters for the PBR951 die
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
39(2)
VALUE
UNIT
Cbpb
73.00
40(2)
fF
Cbpe
131.00
fF
AF
1.000
−
KF
4 x 10−16 −
1
IS
0.963
fA
41
2
BF
102.3
−
42
3
NF
1.002
−
Notes
4
VAF
64.75
V
5
IKF
841.1
mA
1. These parameters have not been extracted, the
default values are shown.
6
ISE
35.77
fA
7
NE
2.138
−
8
BR
90.16
−
9
NR
1.000
−
10
VAR
3.198
V
11
IKR
25.77
mA
12
ISC
156.6
aA
13
NC
1.047
−
14
RB
6.071
Ω
15
IRB
0.000
µA
16
RBM
2.478
Ω
17
RE
0.164
Ω
18
RC
1.315
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
1.161
pF
23
VJE
600.0
mV
24
MJE
0.394
−
25
TF
3.073
ps
26
XTF
10.25
−
27
VTF
4.599
V
28
ITF
53.49
mA
29
PTF
0.000
deg
30
CJC
409.9
fF
31
VJC
287.1
mV
32
MJC
0.111
−
33
XCJC
0.104
−
34
TR
0.000
ps
35(1)
CJS
0.000
F
36(1)
VJS
700.0
mV
37(1)
MJS
0.000
−
38
FC
0.888
−
1998 Aug 10
2. Cbpb, Cbpe; base-bondpad and emitter-bondpad
capacitance to collector.
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.12 Package equivalent circuit SOT23.
List of components (see Fig.12)
DESIGNATION
8
VALUE
UNIT
Cbe
7
fF
Ccb
80
fF
Cce
80
fF
L1
0.35
nH
L2
0.17
nH
L3
0.35
nH
LB
0.40
nH
LE
0.83
nH
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
3 GHz
0.2
180°
2 GHz
0.5
0.2
0
1
2
5
0°
1 GHz
500 MHz
0
40 MHz
5
0.2
200 MHz
100 MHz
0.5
−135°
2
−45°
1
MDA772
1.0
−90°
VCE = 6 V; IC = 30 mA; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11); typical values.
90°
handbook, full pagewidth
135°
45°
100 MHz
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
40 MHz
50
40
30
20
10
180°
−135°
0°
−45°
−90°
MDA773
VCE = 6 V; IC = 30 mA.
Fig.14 Common emitter forward transmission coefficient (S21); typical values.
1998 Aug 10
9
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
90°
handbook, full pagewidth
135°
45°
3 GHz
2 GHz
1 GHz
0.5
0.4
0.3
0.2
180°
500 MHz
200 MHz
0.1
0°
40 MHz
−135°
−45°
−90°
MDA774
VCE = 6 V; IC = 30 mA.
Fig.15 Common emitter reverse transmission coefficient (S12); typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
5
0°
0
40 MHz
2 GHz 1 GHz
500 MHz
3 GHz
200 MHz 100 MHz 5
0.2
−135°
2
0.5
2
−45°
1
MDA775
1.0
−90°
VCE = 6 V; IC = 30 mA; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22); typical values.
1998 Aug 10
10
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, full pagewidth
90°
unstable
region source
1
135°
unstable
region load
1.0
45°
0.8
2
0.5
0.6
ΓOPT
0.2
0.4
5
0.2
180°
0 G = 15 dB
0.5
NF = 1.3 dB
1
2
5
0°
0
NF = 1.5 dB
G = 14 dB
NF = 1.7 dB
G = 13 dB
0.2
5
0.5
−135°
2
−45°
1
MDA770
1.0
−90°
f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.17 Common emitter available gain circles; typical values.
handbook, full pagewidth
90°
unstable
region load
1
135°
0.8
45°
2
0.5
1.0
0.6
Gmax = 9.164 dB
0.2
0.4
5
NF = 2.6 dB
180°
0
NF = 2.4 dB
0.5
1
NF = 2.2 dB
0.2
0.2
2
5
0°
0
ΓOPT
G = 9 dB
0.2
5
G = 8 dB
unstable
region source
−135°
G = 7 dB
0.5
2
−45°
1
MDA771
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
−90°
Fig.18 Common emitter available gain circles; typical values.
1998 Aug 10
11
1.0
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1998 Aug 10
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 10
13
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
NOTES
1998 Aug 10
14
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
NOTES
1998 Aug 10
15
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© Philips Electronics N.V. 1998
SCA60
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Date of release: 1998 Aug 10
Document order number:
9397 750 04135
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