UNISONIC TECHNOLOGIES CO., LTD UTF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION As an N-channel enhancement mode power MOSFET, the UTC UTF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. FEATURES * RDS(ON)<110 mΩ @VGS=10V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTF3055G-AA3-R UTF3055L-TN3-R UTF3055G-TN3-R Note: Pin Assignment: S: Source G: Gate D: Drain Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-252 1 of 5 QW-R502-318.E UTF3055 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS = 10MΩ ) VDGR 60 V Continuous ±20 V VGSS Gate Source Voltage Non-Repetitive (tP ≤10 ms) ±30 V Continuous Drain Current (Ta = 25°C) ID 3.0 A Pulsed Drain Current (tP ≤10 µs) IDM 9.0 A Single Pulsed Avalanche Energy (Note 2) EAS 74 mJ SOT-223 0.83 Power Dissipation (Ta = 25°C) (Note 3) W TO-252 1.136 PD SOT-223 14 mW/°C Derate above 25°C 20 TO-252 Junction Temperature TJ 175 °C Strong Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V 3. When surface mounted to an FR4 board using 1″pad size, 1 oz. (Cu. Area 1.127 sq in ). THERMAL DATA PARAMETER SYMBOL RATINGS SOT-223 150 Junction to Ambient (Note) θJA TO-252 110 Note: When surface mounted to an FR4 board using 1″pad size, 1 oz. (Cu. Area 1.127 sq in ). UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 5 QW-R502-318.E UTF3055 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain Source Breakdown Voltage (Note 1) VGS= 0V, ID =250µA 60 BVDSS Temperature Coefficient (Positive) Drain-Source Leakage Current IDSS VGS=0V, VDS=60V Gate-Source Leakage Current IGSS VGS = ±20 V, VDS =0V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS=VDS, ID =250µA 2.0 VGS(TH) Temperature Coefficient (Negative) Static Drain-Source On-State Resistance RDS(ON) VGS =10 V, ID =1.5A Static Drain-to-Source On-Resistance VDS(ON) VGS =10 V, ID =3A Forward Tran conductance gFS VDS=8.0V, ID=1.7A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS =0 V, VDS =25 V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) VGS=10V, VDD=30V, ID =3.0A , Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) RG =9.1Ω (Note 1) Turn-OFF Fall-Time tF Total Gate Charge QG VGS =10V, VDS =48V, ID =3.0A Gate-Source Charge QGS (Note 1) Gate-Drain Charge QGD Diode Forward Voltage VSD VGS=0V, IS=3.0A tRR Body Diode Reverse Recovery Time VGS=0V, IS=3.0A, tA dI/dt=100 A/μs (Note 1) tB Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%. 2. Switching characteristics are independent of operating junction temperatures. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 68 66 MAX UNIT V mV/°C 1.0 µA ±100 nA 3.0 6.6 88 0.27 3.2 4.0 V mV/°C 110 mΩ 0.40 V M 324 35 110 455 50 155 pF pF pF 9.4 14 21 13 10.6 1.9 4.2 0.89 30 22 8.6 0.04 20 30 45 30 22 ns ns ns ns nC nC nC V ns ns ns nC 1.0 3 of 5 QW-R502-318.E UTF3055 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-318.E UTF3055 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-318.E