Si3495DV Datasheet

Si3495DV
Vishay Siliconix
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.024 at VGS = - 4.5 V
-7
0.030 at VGS = - 2.5 V
- 6.2
0.038 at VGS = - 1.8 V
- 5.2
0.048 at VGS = - 1.5 V
- 5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch and PA Switch for Portable Devices
TSOP-6
Top V iew
3 mm
(4) S
1
6
2
5
3
4
(3) G
2.85 mm
Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free)
Si3495DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
95xxx
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±5
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
Maximum Power Dissipationa
TA = 85 °C
PD
-7
- 5.3
- 3.9
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.6
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 3.6
IDM
Pulsed Drain Current
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
45
62.5
90
110
25
30
Unit
°C/W
Note:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
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1
Si3495DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
- 0.35
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
- 0.75
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
VDS = - 5 V, VGS = - 4.5 V
- 20
A
VGS = - 4.5 V, ID = - 7 A
0.020
0.024
VGS = - 2.5 V, ID = - 6.2 A
0.024
0.030
VGS = - 1.8 V, ID = - 5.2 A
0.030
0.038
VGS = - 1.5 V, ID = - 3 A
0.036
0.048
Drain-Source On-State Resistancea
RDS(on)
Transconductancea
gfs
VDS = - 5 V, ID = - 7 A
25
VSD
IS = - 1.7 A, VGS = 0 V
- 0.62
- 1.1
25
38
VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A
2.5
Forward
Diode Forward Voltagea
µA
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
7
4
td(on)
Turn-On Delay Time
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = - 1.7 A, dI/dt = 100 A/µs
8.5
13
19
30
36
55
200
300
106
160
35
60
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 5 V thru 2 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
1.5 V
12
8
4
12
8
TC = 125 °C
4
25 °C
1V
- 55 °C
0
0
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2
1
2
3
4
5
0
0.0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3500
0.10
0.06
VGS = 1.8 V
VGS = 1.5 V
2500
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
3000
0.08
0.04
VGS = 2.5 V
Ciss
2000
1500
1000
Coss
0.02
500
VGS = 4.5 V
Crss
0.00
0
0
4
8
12
16
20
0
4
ID - Drain Current (A)
8
20
Capacitance
6
1.8
VDS = 10 V
ID = 7 A
VGS = 4.5 V
ID = 7 A
5
4
3
2
(Normalized)
R DS(on) - On-Resistance
1.4
1.2
1.0
0.8
1
0.6
- 50
0
0
4
8
12
16
20
24
28
32
- 25
0
25
50
75
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.10
ID = 7 A
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
10
TJ = 25 °C
1
0.1
0.0
100
Qg - Total Gate Charge (nC)
20
I S - Source Current (A)
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
12
0.08
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
5
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Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
40
32
ID = 250 µA
0.2
24
Power (W)
VGS(th) Variance (V)
0.3
0.1
TA = 25 °C
16
0.0
8
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10 -2
150
10 -1
1
TJ - Temperature (°C)
10
100
600
Time (s)
Single Pulse Power
Threshold Voltage
100
Limited by RDS(on)*
IDM Limited
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 360 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-3
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
Si3495DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73135.
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
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Revision: 02-Oct-12
1
Document Number: 91000