Datasheet

Photomicrosensor (Reflective)
EE-SY1200
Be sure to read Precautions on page 24.
■ Dimensions
Detector center
■ Features
Emitter center
1.9
(0.7)
(1)
(0.8)
(0.8)
3.2
Note:
Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in
outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is
part Au plating area.
Recommended Soldering Pattern
2-1
2-1.7
1.2
Item
IF
50*1
mA
Pulse forward
current
IFP
500*2
mA
Reverse voltage
VR
4
V
Collector-Emitter
voltage
VCEO
30
V
Emitter-Collector
voltage
VECO
5
V
Collector current
IC
20
mA
Collector dissipation
PC
50*1
mW
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Reflow soldering temperature
Tsol
240*3
°C
2-0.65
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Note:1. The shaded portion in the
above figure may cause
shorting. Do not wire in
this portion.
2. The dimensional tolerance
for the recommended soldering pattern is ±0.1 mm.
Detector
Internal Circuit
C
A
E
K
Symbol Rated value Unit
Forward current
2-0.65
2-0.45
A
Terminal No.
Emitter
K
0.7
C
■ Absolute Maximum Ratings
(Ta=25°C)
2-1
1.1
E
• Ultra-compact model.
• PCB surface mounting type.
• High S/N ratio
(High light current / Low leakage current)
• Recommended sensing distance = 1.0 to 4.0 mm
*1 Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2 The pulse width is 10 μs maximum with a frequency of 100 Hz.
*3 Complete soldering within 10 seconds for reflow soldering.
■ Electrical and Optical Characteristics (Ta=25°C)
Item
Emitter
Symbol
Value
Unit
MIN.
TYP.
MAX.
Condition
Forward voltage
VF
---
1.2
1.4
V
IF = 20 mA
Reverse current
IR
---
---
10
μA
VR = 4 V
λP
---
940
---
nm
---
Light current 1
I L1
200
---
1000
μA
Light current 2
I L2
150
---
---
μA
Peak emission wavelength
ID
---
2
200
nA
IF = 10 mA, VCE = 2 V, Aluminum-deposited
surface, d = 4 mm*1
IF = 4 mA, VCE = 2 V, Aluminum-deposited
surface, d = 1 mm*1
VCE = 10 V, 0 lx
Leakage current 1
I LEAK1
---
---
500
nA
IF = 10 mA, VCE = 2 V, with no reflection*2
Leakage current 2
I LEAK2
---
---
200
nA
IF = 4 mA, VCE = 2 V, with no reflection*2
VCE (sat)
---
---
---
V
---
λP
---
850
---
nm
---
Rising time
tr
---
30
---
μs
VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Falling time
tf
---
30
---
μs
VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Detector
Dark current
Collector-Emitter saturated
voltage
Peak spectral sensitivity
wavelength
*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which
is reflected from surroundings of the Photomicrosensor and /or the background object.
Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.
154
EE-SY1200 Photomicrosensor (Reflective)
■ Engineering Data
Forward Current vs. Forward Voltage
Characteristics (Typical)
Forward current IF (mA)
50
40
30
20
PC
-20
0
20
Light current IL (mA)
Light Current vs. Collector-Emitter
Voltage Characteristics (Typical)
1,600
IF=10mA, d=1mm
1,400
Ta=-30°C
Ta=+25°C
40
Ta=25°C
2,500
VCE=2V
d=1mm
2,000
Ta=+70°C
30
1,500
20
1,000
10
500
0
40
60
80
100
Ambient temperature Ta (°C)
1,200
IF=7mA, d=1mm
1,000
IF=15mA, d=4mm
800
0
0.2
0.4
0.6
0.8
1
0
1.2 1.4 1.6 1.8
Forward voltage VF (V)
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Relative light current IL (%)
0
50
3,000
IF
10
-40
60
120
IF=10mA
VCE=2V
110
100
VCE=2V
d=4mm
0
5
10
15
20
Forward current IF (mA)
Dark Current vs. Ambient Temperature
Characteristics (Typical)
Dark current ID (nA)
Forward current IF (mA)
Collector dissipation PC (mW)
60
Light Current vs. Forward Current
Characteristics (Typical)
Light current IL (μA)
Forward Current vs. Collector
Dissipation Temperature Rating
10,000
1,000
100
10
90
1
IF=10mA, d=4mm
600
80
IF=4mA, d=1mm
400
0.1
IF=7mA, d=4mm
IF=2mA, d=1mm
200
70
0.01
IF=4mA, d=4mm
0
0
2
4
IF=2mA, d=4mm
6
8
10
Collector-Emitter voltage VCE (V)
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Sensing Distance Characteristics
(Typical)
0.001
-30 -20 -10
tf
100
10 20 30 40 50 60 70 80 90
Ambient temperature Ta (°C)
120
Aluminum-deposited surface
90
d
80
IF=4mA, 10mA
VCE=10V
70
60
50
Relative light current IL (%)
tr
1,000
0
Sensing Position Characteristics
(Typical)
100
10,000
Relative light current IL (%)
Response time tr,tf (μs)
Response Time vs. Load Resistance
Characteristics (Typical)
60
-40
White
100
Black
d
L
-
0
+
80
IF=10mA
VCE=2V
d=4mm
60
40
40
30
10
20
IF=4mA
VCE=2V
d=1mm
20
10
1
0.1
1
10
100
Load resistance RL (kΩ)
Relative light current IL (%)
Sensing Position Characteristics
(Typical)
120
0
0.5
1
1.5
2
2.5
3
3.5 4
4.5 5
Distance d (mm)
Response Time Measurement
Circuit
Black
0
d
-
0
0
+
-4
-3
-2
-1
0
1
2
3
4
Card moving distance L (mm)
Light Current Measurement Setup
Diagram
Aluminum-deposited surface
t
80
tr
tf
60
IF=10mA
VCE=2V
d=4mm
Input
IF=4mA
VCE=2V
d=1mm
20
0
-6
-5
t
90%
10%
Output
L
40
0
-6
Input
White
100
0
-5
-4
-3
-2
IL
d
Glass
VCC
Output
Sensor
RL
-1
0
1
2
3
4
Card moving distance L (mm)
EE-SY1200 Photomicrosensor (Reflective)
155
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