FREESCALE MC33390DDR2

Freescale Semiconductor
Technical Data
Document Number: MC33390
Rev 7.0, 11/2006
Class B Serial Transceiver
The 33390 is a serial transceiver designed to provide bi-directional
half-duplex communication meeting the automotive SAE Standard J1850 Class B Data Communication Network Interface specification. It
is designed to interface directly to on-board vehicle microcontrollers
and serves to transmit and receive data on a single-wire bus at data
rates of 10.4 kbps using Variable Pulse Width Modulation (VPWM).
The 33390 operates directly from a vehicle's 12 V battery system and
functions in a logic fashion as an I/O interface between the
microcontroller's 5.0 V CMOS logic level swings and the required 0 V
to 7.0 V waveshaped signal swings of the bus. The bus output driver
is short circuit current limited.
Features
• Designed for SAE J-1850 Class B Data Rates
• Full Operational Bus Dynamics Over a Supply Voltage of 9.0 to
16 V
• Ambient Operating Temperature of -40°C to 125°C
• Interfaces Directly to Standard 5.0 V CMOS Microcontroller
• BUS Pin Protected Against Shorts to Battery and Ground
• Thermal Shutdown with Hysteresis
• Voltage Waveshaping of Bus Output Driver
• 40 V Max VBAT Capability
• Pb-Free Packaging Designated by Suffix Code EF
VPWR
J-1850 SERIAL TRANSCEIVER
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-LEAD SOICN
ORDERING INFORMATION
Device
MCZ33390EF/R2
BUS
LOAD
MCU
SLEEP
TX
RX
4X/Loop
GND
Secondary
Nodes
Figure 1. 33390 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
Temperature
Range (TA)
Package
-40°C to 125°C
8 SOICN
MC33390D/DR2
Primary
Node
33390
+VBAT
33390
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
33390
Bus
Driver
VBAT
SLEEP
Thermal
Shutdown
4.5 V
Reference
Waveshaping
Filter
TX
RX
4X/LOOP
BUS
Voltage
Regulator
Digital Output
Driver
Loss of Ground
Protection
4X Enable
Loopback
LOAD
GND
Note This device contains approximately 400 active transistors and 250 gates.
Figure 2. 33390 Simplified Internal Block Diagram
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Analog Integrated Circuit Device Data
Freescale Semiconductor
PIN CONNECTIONS
PIN CONNECTIONS
SLEEP
11
88
RX
GND
22
77
TX
LOAD
33
66
4X/LOOP
BUS
44
55
VBAT
Figure 3. 33390 Pin Connections
Table 1. 33390 Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 9.
Pin Number
Pin Name
Definition
1
SLEEP
2
GND
Device ground pin.
3
LOAD
Accommodates an external pull-down resistor to ground to provide loss of ground protection.
4
BUS
Waveshaped SAE Standard J-1850 Class B transmitter output and receiver input.
5
VBAT
Provides device operating input power.
6
4X/ LOOP
7
TX
Serial data input (DI) from the microcontroller to be transmitted onto Bus.
8
RX
Bus received serial data output (DO) sent to the microcontroller.
Enables the transceiver when Logic 1 and disables the transceiver when Logic 0.
Tristate input mode control; Logic 0 = normal waveshaping, Logic 1 = waveshaping disabled for 4X
transmitting, high impedance = loopback mode.
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Freescale Semiconductor
3
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
VBAT
-0.3 to 40
V
VI/O(CPU)
-0.3 to 7.0
V
VBUS
-2.0 to 16
V
Human Body Model
VESD1
±2000
Machine Model
VESD2
±200
Storage Temperature
TSTG
-65 to 150
°C
TA
-40 to 125
°C
VBAT DC Supply Voltage
Input I/O Pins
(1)
(2)
BUS and LOAD Outputs
ESD Voltage
(3)
Operating Ambient Temperature
V
TJ
-40 to 150
°C
Peak Package Reflow Temperature During Reflow (4), (5)
TPPRT
Note 5.
°C
Thermal Resistance (Junction-to-Ambient)
RθJ-A
180
°C / W
Operating Junction Temperature
Notes
1. An external series diode must be used to provide reverse battery protection of the device.
2. SLEEP, TX, RX, and 4X / LOOP are normally connected to a microcontroller.
3. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), ESD2 testing is performed in
accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
4.
5.
Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 Ω to GND, 3.6 nF to GND
mA
IBAT (OP1)
–
3.0
11.5
IBAT (OP2)
–
22.4
32
After SLEEP Toggle Low to High; Prior to Tx Toggling
IBAT(BUS L1)
–
1.1
3.0
After Tx Toggle High to Low
IBAT(BUS L2)
–
6.4
8.5
BUS Load = 257 Ω to GND, 20.2 nF to GND
Battery Bus Low Input Current
Sleep State Battery Current
mA
IBAT(SLEEP)
VSLEEP = 0 V
µA
–
38.2
65
BUS
BUS Input Receiver Threshold (6)
Threshold High (Bus Increasing until Rx ≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx ≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
V
VBUS(IH)
4.25
3.9
–
VBUS(IL)
–
3.7
3.5
BUSTH(SLEEP)
2.4
3.0
3.4
VBUS(HYST)
0.1
0.2
0.6
BUS-Out Voltage (257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω)
V
8.2 V ≤ VBAT ≤ 16 V, Tx = 5.0 V
VBUS (OUT1)
6.25
6.9
8.0
4.25 V ≤ VBAT ≤ 8.2 V, Tx = 5.0 V
VBUS (OUT2)
VBAT - 1.6
–
VBAT
Tx = 0 V
VBUS (OUT3)
–
0.27
0.7
60
129
170
IBUS (LEAK1)
-500
-55
–
IBUS (LEAK2)
–
189
500
150
170
190
10
12
15
BUS Short Circuit Output Current
IBUS (SHORT)
Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V
mA
BUS Leakage Current
µA
-2.0 V ≤ VBUS ≤ 0 V
0 V ≤ VBUS ≤ VBAT
BUS Thermal Shutdown
(7)
(Tx = 5.0 V, IBUS = -0.1 mA)
TBUS (LIM)
Increase Temperature until VBUS ≤ 2.5 V
BUS Thermal Shutdown Hysteresis (8)
TBUS (LI MHYS)
TBUS (LIM) - TBUS (REEN)
BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 µA) (see
Figure 4)
-18 V ≤ VBUS ≤ 9.0 V
-18 V ≤ VLOAD ≤ 9.0 V
°C
°C
mA
IBUS (LOSS)
–
0.00
0.1
ILOAD (LOSS)
–
0.00
0.1
Notes
6. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
7.
8.
Device characterized but not production tested for thermal shutdown.
Device characterized but not production tested for thermal shutdown hysteresis.
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Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS (CONTINUED)
LOAD Output
LON
IL = 6.0 mA
Unpowered LOAD Output
V
–
0.07
0.2
0.3
0.56
0.9
LDIO
VBAT = 0 V, IL = 6.0 mA
V
TX
Tx Input Voltage
V
Tx Input Logic Low Level
VTx(IL)
–
–
0.8
Tx Input Logic High Level
VTx(IH)
3.5
–
–
Tx Input Current
µA
VTx = 5.0 V
ITx(IH)
50
106
200
VTx = 0 V
ITx(IL)
-2.0
0.23
2.0
V4X / LOOP = 0 V (Normal Mode)
I4X / LOOP(IL)
-200
-60
200
V4X / LOOP = 5.0 V (4X Mode)
I4X / LOOP(IH)
-200
110
200
Normal Mode to Loopback Mode
V4X / LOOP(IL)
1.1
1.31
1.5
Loopback Mode to 4X Mode
V4X / LOOP(IH)
3.2
3.43
3.6
0.01
0.18
0.4
4.25
4.58
4.75
LOOP
4X / LOOP Input Current
µA
4X / LOOP Input Threshold (Tx = 4096 Hz Square Wave)
V
RX
Rx Output Voltage Low
VRx (LOW)
VBUS = 0 V, IRx = 1.6 mA
Rx Output Voltage High
VRx(HIGH)
VBUS = 7.0 V, IRx = -200 µA
Rx Output Current
V
V
IRx
VRx = High; Short Circuit Protection Limits
mA
2.0
3.67
8.0
SLEEP
SLEEP Input Current
µA
VSLEEP = 0 V
ISLEEP (IL)
–
-0.23
-2.0
VSLEEP = 5.0 V
ISLEEP (IH)
1.0
6.21
20
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
BUS Voltage Rise Time (9) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave)
(see Figure 5)
tRISE (BUS)
Min
Typ
Max
Unit
BUS
µs
BUS Load = 3,300 pF and 1.38 kΩ to GND
9.0
11.15
15
BUS Load = 16,500 pF and 300 Ω to GND
9.0
11.86
15
BUS Voltage Fall Time
(see Figure 5)
(9)
(9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave)
tFALL (BUS)
µs
BUS Load = 3,300 pF and 1.38 kΩ to GND
9.0
10.50
15
BUS Load = 16,500 pF and 300 Ω to GND
9.0
11.17
15
Pulse Width Distortion Time (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square
Wave) (see Figure 6)
tPWD (BUS)
BUS Load = 3,300 pF and 1.38 kΩ to GND
µs
35
62
93
–
17.7
25
4X Mode
–
2.6
4.0
Normal Mode
13
17.3
24
80
40
–
Propagation Delay
tPD (BUS)
Tx Threshold to Rx Threshold
µs
TX
Tx to BUS Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (see Figure 7)
SLEEP to Tx Setup Time (see Figure 7)
tTXDELAY
tSLEEPTXSU
µs
µs
RX
Rx Output Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (see Figure 8)
µs
Low-to-Output High
TRXDELAY / L–H
–
0.11
2.0
High-to-Output Low
TRXDELAY / H–L
–
0.38
2.0
Rx Output Transition Time (CRx = 50 pF to GND, 10% and 90% Points)
(see Figure 9)
Low-to-Output High
High-to-Output Low
µs
tRXTRANS / L–H
–
0.34
1.0
tRXTRANS /H–L
–
0.08
1.0
Rx Output Transition Time (10) (CRx = 50 pF to GND, SLEEP = 0 V, 10% and
90% Points) (see Figure 9)
Low-to-Output High
High-to-Output Low
µs
tRXTRANS / L–H
–
0.32
5.0
tRXTRANS /H–L
–
0.08
5.0
Notes
9. Typical is the parameter's approximate average value with VBAT = 13 V, TA = 25°C.
10.
Rx Output Transition Time from a sleep state.
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Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
ELECTRICAL PERFORMANCE CURVES
TEST FIGURES
33390
SLEEP
IBUS (LOSS)
VBAT
-18 V to 9.0 V
BUS
Tx
GND
2.5 V
tSLEEPTxSU
-18 V to 9.0 V
LOAD
ILOAD (LOSS)
tTxDelay
BUS
Figure 4. Loss of Ground or VBAT Test Circuit
2.5 V
3.875 V
Figure 7. SLEEP to Tx Delay Times
3.5 V
BUS
64 µs
Tx
0.8 V
122 µs
3.875 V
tRxDelay / lowto-output high
tRxDelay /high-tooutput low
80%
BUS
Rx
20%
2.5 V
t FALL
t RISE
Figure 8. BUS-to-Rx Delay Time
Figure 5. BUS Rise and Fall Times
5.0 V
Tx
64 µs
tRXTRANS / L–
0V
tRXTRANS / H–L
90%
90%
tPWD(MIN)
tPWD
1.5 V
tPWD(MAX
Rx
10%
10%
)
Figure 6. Pulse Width Distortion
Figure 9. Rx Rise and Fall Time
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FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The 33390 is a serial transceiver device designed to meet
the SAE Standard J-1850 Class B performance for bidirectional half-duplex communication. The device is
packaged in an economical surface-mount SOIC plastic
package. An internal block diagram of the device is shown in
Figure 2.
The 33390 derives its robustness to temperature and
voltage extremes from being built on a SMARTMOS process,
incorporating CMOS logic, bipolar/MOS analog circuitry, and
DMOS power FETs. Though the 33390 was principally
designed for automotive applications requiring SAE J-1850
Class B standards, it is suited for other serial communication
applications. It is parametrically specified over an ambient
temperature range of -40°C ≤ TA ≤ 125°C and 7.0 V ≤ VBAT ≤
16 V supply. The economical 8-pin SOICN surface mount
plastic package makes the device a cost-effective solution.
FUNCTIONAL PIN DESCRIPTION
Input Power (VBAT)
This is the only required input power source necessary to
operate the 33390. The internal voltage reference of the
33390 will remain fully operational with a minimum of 9.0 V
on this pin. Bus transmissions can continue with battery
voltages down to 5.0 V. The bus output voltage will follow the
battery voltage down and, in doing so, track approximately
1.6 V below the battery voltage. The device will continue to
receive and transmit bus data to the microcontroller with
battery voltages as low as 4.25 V. The pin can withstand
voltages from -0.3 V to 40 V. If reverse battery protection is
required, an appropriate diode must be placed in series with
this pin to protect the IC.
Sleep Input (SLEEP)
This input is used to enable and disable the Class B
transmitter. The Class B receiver is always enabled so long
as adequate VBAT pin voltage is applied. When the SLEEP pin
voltage is 5.0 V, the Class B transmitter is enabled. If this
input is 0 V, the Class B transmitter will be disabled and less
than 65 µA of current will be drawn by the VBAT pin. The pin
also provides a 5.0 V reference, internal to the device, used
to establish the Rx output level and slew rate times.
down resistor. No matter how many secondary nodes are on
the Class B bus, the RC time constant of the Class B bus is
maintained at approximately 5.0 µs. The minimum and
maximum capacitance and resistance on the Class B bus is
given by the expressions shown in Table 5, page 10.
One Primary Node
470 pF
10.6 kΩ
1.5 kΩ
3300 pF
Figure 10. Minimum Bus Load
Primary Node
10.6 kΩ
470 pF
3300 pF
1.5 kΩ
24 Secondary Nodes
Class B Functional Description
The transmitter provides an analog waveshaped 0 V to
7.0 V waveform on the BUS output. It also receives
waveforms and transmits a digital level signal back to a logic
IC. The transmitter can drive up to 32 secondary Class B
transceivers (see Figures 10 and 11). These secondary
nodes may be at ground potentials that are ± 2.0 V relative to
the control assembly. Waveshaping will only be maintained
during 2 of the 4 corners when the 0 to ± 2.0 V ground
potential difference condition exists. The 33390 is a
secondary node on the Class B bus. Each secondary
transceiver has a 470 ± 10% pF capacitor on its output for
EMI suppression purposes, as well as a 10.6 kΩ ± 5% pulldown resistor to ground. The primary node has a 3300 ± 10%
pF capacitor on its output for EMI suppression, as well as a
1.5 kΩ ± 5% pull-down resistor to ground. With more than 26
nodes, there is no primary node (see Figure 12). All nodes
will have a 470 ± 10% pF capacitor and a 10.6 kΩ ± 5% pull-
442 Ω
11280 pF
Figure 11. Maximum Number of Nodes
31 Secondary Nodes
10.6 kΩ
470 pF
342 Ω
14570 pF
Figure 12. Maximum Bus Load
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9
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
Table 5. Class B Bus Capacitance and Resistance Expressions
Level
Capacitance
Resistance to Ground
Minimum
(3.3 x 0.9) + (0.47 x 0.9) = 3.39 nF
(1.5 x 0.95) || (10.6 x 0.95) / 25 = 314 Ω
Maximum
(3.3 x 1.1) + 25 (0.47 x 1.1) = 16.55 nF
(1.5 x 1.05) || (10.6 x 1.05) = 1.38 kΩ
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TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
Class B Module Inputs
Transmitter Data from the MCU (Tx)
The Tx input is a push-pull (N-channel / P-channel FETs)
buffer with hysteresis for noise immunity purposes. This pin
is a 5.0 V CMOS logic level input from the MCU following a
true logic protocol. A logic [0] input drives the BUS output to
0 V (via the external pull-down resistor to ground on each
node), while a logic [1] input produces a high voltage at the
BUS output. A logic [0] input level is guaranteed when the Tx
input pin is open-circuited by virtue of an internal 40 kΩ pulldown resistor. No external resistor is required for its
operation.
Waveshaping and 4X / Loop
This input is a tristateable input: 0 V = normal
waveshaping, 5.0 V = waveshaping is disabled for 4X
transmitting, and high impedance = loopback mode of
operation. This is a logic level input used to select whether
waveshaping for the Class B output is enabled or disabled. A
logic [0] enables waveshaping, while a logic [1] disables
waveshaping. In the 4X mode, the BUS output rise time is
less than 2.0 µs and the fall time is less than 5.0 µs (owing to
the external RC pull-down to ground). In the loopback
condition, the Tx signal is fed back to the Rx output after
waveshaping without being transmitted onto the BUS. This
mode of operation is useful for system diagnostic purposes.
Class B Module Outputs
Transceiver Output (BUS)
This is the output driver stage that sources current to the
bus. Its output follows the waveshaped waveform input. Its
output voltage is limited to 6.25 V to 8.0 V under normal
battery level conditions. The limited level is controlled by an
internal regulator/clamp circuit. Once the battery voltage
drops below 9.0 V, the regulator / clamp circuit saturates,
causing the bus voltage to track the battery voltage. A 1.5 kΩ
± 5% external resistor (as well as any 10.6 kΩ pull-down
resistors of any secondary nodes) sinks the current to
discharge the capacitors during high-to-low transitions. This
sourcing output is short circuit-protected (60 mA to 170 mA)
against a short to -2.0 V and sinks less than 1.0 mA when
shorted to VBAT. If a short occurs, the overtemperature
shutdown circuit protects the source driver of the device. In
the event battery power is lost to the assembly, the bus
transmitter's output stage will be disabled and the leakage
current from the BUS output will not source or sink more than
100 µA of current. The transceiver will operate with a remote
ground offset of ± 2.0 V, but the lower corners of transmission
will not be rounded during this condition.
Receiver Output to the Microcontroller (Rx)
This is a 5.0 V CMOS compatible push-pull output used to
send received data to the microcontroller. It does not require
an external pull-up resistor to be used. The receiver is always
enabled and draws less than 65 µA of current from VBAT. The
receive threshold is dependent on the state of the SLEEP pin.
The receiver circuitry is able to operate with VBAT voltages as
low as 4.25 V and still remains capable of “waking up” the
33390 when remote Class B activity is detected.
When the SLEEP pin is 0 V and message activity occurs
on the bus, the receiver passes the bus message through to
the microcontroller. The 33390 does not automatically “wake
up” from a sleep state when bus activity occurs: the
microcontroller must tell it to do so.
In the Static Electrical Characteristics table, the maximum
voltage for Rx is specified as 4.75 V over an operating range
of -40°C to 125°C temperature and 7.0 V to 16 V VBAT. This
maximum Rx voltage is compatible with the minimum VDD
voltage of microcontrollers to prevent the 33390 from
sourcing current to the microcontroller's output.
Switched Ground Output (LOAD)
Normally this output is a saturated switch to ground, which
pulls down the external resistor between the BUS and LOAD
outputs. In the event ground is lost to the assembly, the
LOAD output will bias itself “off” and will not leak more than
100 µA of current out of this pin.
Overtemperature Shutdown
If the BUS output becomes shorted to ground for any
duration, an overtemperature shutdown circuit “latches off”
the output source transistor whenever the die temperature
exceeds 150°C to 190°C. The output transistor remains
latched off until the Tx input is toggled from a logic [0] to a
logic [1]. The rising edge provides the clearing function,
provided the locally sensed temperature is 10°C to 15°C
below the latch-off temperature trip temperature.
Waveshaping
Waveshaping is incorporated into the 33390 to minimize
radiated EMI emissions.
Receiver Protocol
The Class B communication scheme uses a variable pulse
width (VPW) protocol. The microcontroller provides the VPW
decoding function. Once the receiver detects a transition on
Rx, it starts an internal counter. The initial “start of frame” bit
is a logic [1] and lasts 200 µs. For subsequent bits, if there is
a bus transition before 96 µs, one logic state is inferred. If
there is a bus transition after 96 µs, the other logic state is
inferred. The “end of data” bit is a logic [0] and lasts 200 µs.
If there is no activity on the bus for 280 µs to 320 µs following
a broadcast message, multiple unit nodes may arbitrate for
control of the next message. During an arbitration, after the
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Freescale Semiconductor
11
TYPICAL APPLICATIONS
“start of frame” bit has been transmitted, the secondary node
transmitting the most consecutive logic [0] bits will be granted
sole transmission access to the bus for that message.
Loss of Assembly Ground Connection
The definition of a loss of assembly ground condition at the
device level is that all pins of the 33390, with the exception of
BUS and LOAD, see a very low impedance to VBAT.
The LOAD pin of the device has an internal transistor
switch connected to it that is normally saturated to ground.
This pulls the LOAD-side of the external resistor (tied from
BUS to LOAD) to ground under normal conditions. The LOAD
pin switch is essentially that of an “upside down” FET, which
is normally biased “on” so long as module ground is present
and biased “off” when loss-of-ground occurs. When a loss of
assembly ground occurs, the load transistor switch is selfbiased “off”, allowing no more than 100 µA of leakage current
to flow in the LOAD pin. During such a loss of assembly
ground condition, the BUS and LOAD pins exhibit a high
impedance to VBAT; all other pins will exhibit a low
impedance to VBAT. During this condition the BUS pin is
prevented from sourcing any current or loading the bus,
which would cause a corruption of any data being transmitted
on the bus. While a particular assembly is experiencing a loss
of ground, all other assembly nodes are permitted to function
normally. It should be noted that with other nodes existing on
the bus, the bus will always have some minimum / maximum
impedance to ground as shown in Table 5, page 10.
Loss of Assembly Battery Connection
The definition of a loss of assembly battery condition at the
device level is that the VBAT pin of the 33390 sees an infinite
impedance to VBAT, but there is some undefined impedance
between these pins and ground.
33390
12
Analog Integrated Circuit Device Data
Freescale Semiconductor
TYPICAL APPLICATIONS
PACKAGE DIMENSIONS
PACKAGE DIMENSIONS
For the most current package revision, visit www.freescale.com and perform a keyword search using the 98A listed below.
EF SUFFIX (PB-FREE)
8-LEAD SOIC NARROW BODY
PLASTIC PACKAGE
98ASB42564B
ISSUE U
33390
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
REVISION HISTORY
REVISION HISTORY
REVISION
DATE
DESCRIPTION OF CHANGES
5.0
4/2006
•
•
•
Converted to Freescale format
Implemented revision history page.
Added Part Numbers MC33390EF/EFR2 to Ordering Information on Page 1.
6.0
10/2006
•
•
Updates document form and style
Removed MC33390EF and replaced with MCZ33390EF in the number Ordering Information
7.0
11/2006
•
Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from
Maximum Ratings on page 4. Added note with instructions to obtain this information from
www.freescale.com.
33390
14
Analog Integrated Circuit Device Data
Freescale Semiconductor
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MC33390
Rev 7.0
11/2006
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