Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N70
Power MOSFET
1.2A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 13.5Ω @ VGS = 10V, ID = 0.6A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N70L-TM3-T
1N70G-TM3-T
1N70L-TMA-T
1N70G-TMA-T
1N70L-TN3-R
1N70G-TN3-R
1N70L-T92-B
1N70G-T92-B
1N70L-T92-K
1N70G-T92-K
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-251
TO-251L
TO-252
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tape Box
Bulk
1N70L-TM3-T
(1)Packing Type
(2)Package Type
(3)Green Package

(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) TM3: TO-251, TMA: TO-251L, TN3: TO-252,
T92: TO-92
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-251 / TO-251L / TO-252
TO-92
UTC
1N70
1
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
L: Lead Free
G: Halogen Free
Data Code
1 of 8
QW-R502-171.E
1N70

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
RATINGS
700
±30
1.2
1.2
4.8
50
4.0
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
SYMBOL
RATINGS
UNIT
110
°C/W
140
°C/W
4.53
°C/W
79
°C/W
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt (Note 3)
TO-251/TO-251L
28
W
TO-252
Power Dissipation
PD
TO-92
1.6
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
Avalanche Energy (Note 2)

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-251/TO-251L
TO-252
TO-92
TO-251/TO-251L
TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
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QW-R502-171.E
1N70

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 2,3)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
(Note 2,3)
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS = 1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
700
0.4
V
10
μA
100 nA
-100 nA
V/°C
9.3
4.0
13.5
V
Ω
190
25
20
220
35
25
pF
pF
pF
33
45
62
31
12
3.5
2.2
45
60
80
45
18
ns
ns
ns
ns
nC
nC
nC
1.4
V
1.2
A
4.8
A
2.0
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QW-R502-171.E
1N70

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-171.E
1N70

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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1N70

Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
VDS=50V
250μs Pulse Test
Top:
100
100
125℃
10-1
25℃
250μs Pulse Test
TC=25℃
10-2
10-1
10-1
2
101
100
4
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
TJ=25℃
VGS=10V
VGS=20V
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
8
10
Source- Drain Diode Forward Voltage
On-Resistance vs. Drain Current
25
6
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
30
-40℃
VGS=0V
250μs Pulse Test
100
125℃
10-1
0.2
2.5
0.6
0.8
1.0
1.2
1.4
1.6
Source-Drain Voltage, VSD (V)
Capacitance (pF)
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
0.4
25℃
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QW-R502-171.E
1N70
Drain-Source On-Resistance, RDS(ON)
(Normalized) (Ω)
Drain-Source Breakdown Voltage, BVDSS,
(Normalized) (V)
TYPICAL CHARACTERISTICS(Cont.)
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
1.2
Operation in This Area is
Limited by RDS(on)
101
Drain Current, ID (A)
Drain Current, ID (A)
100μs
1ms
100
10ms
DC
10-1
0.6
0.3
Tc=25℃
TJ=150℃
Single Pulse
10-2
100
0.9
101
102
103
Drain-Source Voltage, VDS (V)
0.0
25
50
75
100
125
150
Case Temperature, TC (℃)
Thermal Response, θJC (t)

Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-171.E
1N70
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-171.E
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