UNISONIC TECHNOLOGIES CO., LTD UF1404 Preliminary Power MOSFET 162A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF1404 is a N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and high switching speed. The UTC UF1404 is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts, etc. FEATURES * RDS(ON)= 4mΩ @ VGS=10V, ID=95A * High Switching Speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF1404L-TA3-T UF1404G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-641.a UF1404 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 40 V ±20 V TC=25°C 162 (Note 5) A ID Continuous (VGS=10V) Drain Current TC=100°C 115 (Note 5) A Pulsed (Note 2) TC=25°C IDM 650 A Avalanche Current (Note 2) IAR 95 A Single Pulsed (Note 3) EAS 519 mJ Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns Power Dissipation (TC=25°C) PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by maximum junction temperature 3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A 4. ISD≤95A, di/dt≤150A/µs, VDD≤BVDSS, TJ≤175°C 5. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 0.625 UNIT °C/W °C/W 2 of 6 QW-R502-641.a UF1404 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1mA VDS=40V, VGS=0V Drain-Source Leakage Current IDSS VDS=32V, VGS=0V, TJ=150°C Forward VGS=+20V Gate- Source Leakage Current IGSS Reverse VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=95A (Note 2) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG ID=95A, VDS=32V, VGS=10V Gate to Source Charge QGS (Note 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=20V, ID=95A, RG=2.5Ω, R Turn-OFF Delay Time tD(OFF) D=0.21Ω (Note 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Internal Drain Inductance LD Between lead, 6 mm (0.25in.) from package Internal Source Inductance LS and center of die contact MIN TYP MAX UNIT 40 0.036 2.0 3.5 V V/°C 20 µA 250 µA +200 nA -200 nA 4.0 4 7.36 1.68 0.24 160 35 42 17 140 72 26 V mΩ nF nF nF 200 60 nC nC nC ns ns ns ns 4.5 nH 7.5 nH Maximum Body-Diode Continuous Current IS MOSFET symbol showing 162 A (Note 4) the integral reverse p-n Maximum Body-Diode Pulsed Current junction diode. ISM 650 A (Note 1) Drain-Source Diode Forward Voltage VSD IS=95A, VGS=0V, TJ=25°C (Note 2) 1.3 V Body Diode Reverse Recovery Time tRR IF=95A, di/dt=100A/µs, 71 110 ns TJ=25°C (Note 2) Body Diode Reverse Recovery Charge QRR 180 270 µC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature 2. Pulse width≤300µs, Duty cycle≤2% 3. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS 4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-641.a UF1404 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-641.a UF1404 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-641.a UF1404 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-641.a