Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF1404
Preliminary
Power MOSFET
162A, 40V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UF1404 is a N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON) and high switching speed.
The UTC UF1404 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
„
FEATURES
* RDS(ON)= 4mΩ @ VGS=10V, ID=95A
* High Switching Speed
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF1404L-TA3-T
UF1404G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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UF1404
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
40
V
±20
V
TC=25°C
162 (Note 5)
A
ID
Continuous (VGS=10V)
Drain Current
TC=100°C
115 (Note 5)
A
Pulsed (Note 2)
TC=25°C
IDM
650
A
Avalanche Current (Note 2)
IAR
95
A
Single Pulsed (Note 3)
EAS
519
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
20
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Power Dissipation (TC=25°C)
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A
4. ISD≤95A, di/dt≤150A/µs, VDD≤BVDSS, TJ≤175°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A
„
SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62
0.625
UNIT
°C/W
°C/W
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„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1mA
VDS=40V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V, TJ=150°C
Forward
VGS=+20V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=95A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
ID=95A, VDS=32V, VGS=10V
Gate to Source Charge
QGS
(Note 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=20V, ID=95A, RG=2.5Ω,
R
Turn-OFF Delay Time
tD(OFF)
D=0.21Ω (Note 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Internal Drain Inductance
LD
Between lead, 6 mm
(0.25in.) from package
Internal Source Inductance
LS
and center of die contact
MIN TYP MAX UNIT
40
0.036
2.0
3.5
V
V/°C
20
µA
250 µA
+200 nA
-200 nA
4.0
4
7.36
1.68
0.24
160
35
42
17
140
72
26
V
mΩ
nF
nF
nF
200
60
nC
nC
nC
ns
ns
ns
ns
4.5
nH
7.5
nH
Maximum Body-Diode Continuous Current
IS
MOSFET symbol showing
162
A
(Note 4)
the integral reverse p-n
Maximum Body-Diode Pulsed Current
junction diode.
ISM
650
A
(Note 1)
Drain-Source Diode Forward Voltage
VSD
IS=95A, VGS=0V, TJ=25°C (Note 2)
1.3
V
Body Diode Reverse Recovery Time
tRR
IF=95A, di/dt=100A/µs,
71
110 ns
TJ=25°C (Note 2)
Body Diode Reverse Recovery Charge
QRR
180 270 µC
Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature
2. Pulse width≤300µs, Duty cycle≤2%
3. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80%
VDSS
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current
is 75A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF1404
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF1404
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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