Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT100N03-Q
Power MOSFET
100A, 30V N-CHANNEL
POWER MOSFET
1

TO-220
DESCRIPTION
The UT100N03-Q uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1

TO-263
FEATURES
* RDS(ON) < 5.3mΩ @ VGS =10V, ID =50A
* RDS(ON) < 8.0mΩ @ VGS =4.5V, ID =40A

1
SYMBOL
DFN-8(5x6)
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT100N03L-TA3-T
UT100N03G-TA3-T
TO-220
UT100N03L-TQ2-T
UT100N03G-TQ2-T
TO-263
UT100N03L-TQ2-R
UT100N03G-TQ2-R
TO-263
UT100N03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1
G
G
G
S
Pin Assignment
2 3 4 5 6 7 8
D S - - - - D S - - - - D S - - - - S S G D D D D
Packing
Tube
Tube
Tape Reel
Tape Reel
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UT100N03-Q

Power MOSFET
MARKING
TO-251 / TO-252 / TO-252D / TO-263
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
DFN-8(5×6)
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
100
A
Pulsed Drain Current (Note 2)
IDM
400
A
Single Pulsed Avalanche Current (Note 3)
IAS
35
A
Single Pulsed Avalanche Energy (Note 3)
EAS
875
mJ
TO-220/TO-263
100
W
Power Dissipation
DFN-8(5×6)
21
W
PD
TO-220/TO-263
0.67
W/°C
Derate above 25°C
DFN-8(5×6)
0.168
W/°C
Junction Temperature
TJ
+175
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SYMBOL
TO-220/TO-263
θJA
DFN-8(5×6)
TO-220/TO-263
Junction to Case
θJC
DFN-8(5×6)
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1" x 1" FR4 board.
Junction to Ambient
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
62.5
40.3 (Note 1, 2)
1.5
6 (Note 1, 2)
UNIT
°C/W
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS=30 V,VGS =0 V
VDS =0 V, VGS = ±20 V
30
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10 V, ID =50 A
VGS =4.5 V, ID =40 A
1
RDS(ON)
DYNAMIC PARAMETERS(Note3)
Input Capacitance
CISS
VDS =15V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS(Note3)
Total Gate Charge
QG
Gate Source Charge
QGS
VDS =15V, VGS =5V, ID =16A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, ID =1A, RGEN =6Ω
V
Turn-OFF Delay Time
tD(OFF)
GS =10 V
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
Drain-Source Diode Forward Current
IS
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%
2. Guaranteed by design, not subject to production testing
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
1
±100
3
5.3
8
3800
700
500
V
µA
nA
V
mΩ
pF
400
80
100
180
400
480
400
nC
ns
1.5
90
V
A
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
Power MOSFET
TEST CIRCUIT AND WAVEFORM
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Power MOSFET
TYPICAL CHARACTERISTICS

Output Characteristics
Transfer Characteristics
50
VGS=10,8,6,4V
80
Drain Current,ID (A)
Drain Current,ID (A)
100
60
VGS=3V
40
40
30
20
25℃
10
20
TJ=125℃
-55℃
0
0
4
0
1
3
4
2
Gate to Source Voltage,VGS (V)
5
Normalized Gate-Source Threshold
Voltage,VTH
1
2
3
Drain to Source Voltage,VDS (V)
Capacitance,C (pF)
Gate to Source Voltage,VGS (V)
Normalized On-Resistance,
RDS(ON) (Ohms)
0
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UT100N03-Q
TYPICAL CHARACTERISTICS(Cont.)
Drain Current,ID (A)
Source-Drain Current,IS (A)

Power MOSFET
Normalized Thermal Transient Impedanc Curve
100
D=0.5
0.2
-1
10
PDM
0.1
0.05
0.02
0.01
t2
1.RθJC(t)=r(t)*RθJC
2.RθJC=See Datasheet
3.TJM-TC=P*RθJC(t)
4.Duty Cycle,D=t1/t2
Single Pulse
10-2
10-5
t1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
100
101
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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