UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-263 FEATURES * RDS(ON) < 5.3mΩ @ VGS =10V, ID =50A * RDS(ON) < 8.0mΩ @ VGS =4.5V, ID =40A 1 SYMBOL DFN-8(5x6) 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT100N03L-TA3-T UT100N03G-TA3-T TO-220 UT100N03L-TQ2-T UT100N03G-TQ2-T TO-263 UT100N03L-TQ2-R UT100N03G-TQ2-R TO-263 UT100N03G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 G G G S Pin Assignment 2 3 4 5 6 7 8 D S - - - - D S - - - - D S - - - - S S G D D D D Packing Tube Tube Tape Reel Tape Reel 1 of 7 QW-R502-625.B UT100N03-Q Power MOSFET MARKING TO-251 / TO-252 / TO-252D / TO-263 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 7 QW-R502-625.B UT100N03-Q Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 100 A Pulsed Drain Current (Note 2) IDM 400 A Single Pulsed Avalanche Current (Note 3) IAS 35 A Single Pulsed Avalanche Energy (Note 3) EAS 875 mJ TO-220/TO-263 100 W Power Dissipation DFN-8(5×6) 21 W PD TO-220/TO-263 0.67 W/°C Derate above 25°C DFN-8(5×6) 0.168 W/°C Junction Temperature TJ +175 °C Strong Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature 3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL TO-220/TO-263 θJA DFN-8(5×6) TO-220/TO-263 Junction to Case θJC DFN-8(5×6) Notes: 1. Maximum under Steady State conditions is 90 °C/W. 2. Surface Mounted on 1" x 1" FR4 board. Junction to Ambient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 40.3 (Note 1, 2) 1.5 6 (Note 1, 2) UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R502-625.B UT100N03-Q Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note2) Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS=30 V,VGS =0 V VDS =0 V, VGS = ±20 V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10 V, ID =50 A VGS =4.5 V, ID =40 A 1 RDS(ON) DYNAMIC PARAMETERS(Note3) Input Capacitance CISS VDS =15V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS(Note3) Total Gate Charge QG Gate Source Charge QGS VDS =15V, VGS =5V, ID =16A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, ID =1A, RGEN =6Ω V Turn-OFF Delay Time tD(OFF) GS =10 V Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V Drain-Source Diode Forward Current IS Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2% 2. Guaranteed by design, not subject to production testing UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 3 5.3 8 3800 700 500 V µA nA V mΩ pF 400 80 100 180 400 480 400 nC ns 1.5 90 V A 4 of 7 QW-R502-625.B UT100N03-Q Power MOSFET TEST CIRCUIT AND WAVEFORM UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-625.B UT100N03-Q Power MOSFET TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics 50 VGS=10,8,6,4V 80 Drain Current,ID (A) Drain Current,ID (A) 100 60 VGS=3V 40 40 30 20 25℃ 10 20 TJ=125℃ -55℃ 0 0 4 0 1 3 4 2 Gate to Source Voltage,VGS (V) 5 Normalized Gate-Source Threshold Voltage,VTH 1 2 3 Drain to Source Voltage,VDS (V) Capacitance,C (pF) Gate to Source Voltage,VGS (V) Normalized On-Resistance, RDS(ON) (Ohms) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-625.B UT100N03-Q TYPICAL CHARACTERISTICS(Cont.) Drain Current,ID (A) Source-Drain Current,IS (A) Power MOSFET Normalized Thermal Transient Impedanc Curve 100 D=0.5 0.2 -1 10 PDM 0.1 0.05 0.02 0.01 t2 1.RθJC(t)=r(t)*RθJC 2.RθJC=See Datasheet 3.TJM-TC=P*RθJC(t) 4.Duty Cycle,D=t1/t2 Single Pulse 10-2 10-5 t1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 100 101 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-625.B