Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF3205-J
Preliminary
Power MOSFET
110A, 55V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF3205-J uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.

FEATURES
* RDS(ON) < 8mΩ @ VGS=10V, ID=62A
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF3205L-TA3-T
UF3205G-TA3-T
UF3205L-TQ2-T
UF3205G-TQ2-T
UF3205L-TQ2-R
UF3205G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
VGSS
±20
V
Drain-Source Voltage
VDSS
55
V
Continuous (VGS=10V)
ID
110
Drain Current
A
Pulsed (Note 2)
IDM
390
Avalanche Current (Note 2)
IAR
62
A
Repetitive(Note 2)
EAR
20
mJ
Avalanche Energy
265
Single Pulsed(Note 3)
EAS
Power Dissipation (TC=25°C)
PD
200
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=0.138mH, RG=25Ω, IAS=62A

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
TO-220
TO-263
θJC
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MAX
62.5
0.8
0.7
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS
VDS=55V,VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
Breakdown Voltage Temperature
△BVDSS/△TJ Reference to 25°C, ID=1mA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=10V, ID=62A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=44V, ID=62A, VGS=10V
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=28V, ID=62A, RG=4.5Ω,
Turn-ON Rise Time
tR
V
Turn-OFF Delay Time
tD(OFF)
GS=10V (Note)
Turn-OFF Fall-Time
tF
Internal Drain Inductance
LD
Internal Source Inductance
LS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=62A ,VGS=0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Body Diode Reverse Recovery Time
tRR
IF=62A, dI/dt=100A/μs (Note)
Body Diode Reverse Recovery Charge
QRR
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
55
25
±100
0.057
2.0
V/°C
4.0
8.0
3247
781
211
V
mΩ
pF
pF
pF
146
35
54
nC
nC
nC
ns
ns
ns
ns
nH
nH
1.3
V
110
A
390
A
104
215
ns
nC
14
101
50
65
4.5
7.5
69
143
V
μA
nA
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
2A Switching Test Circuit
2B Switching Waveforms
QG
VGS
QGS
QGD
VD
Charge
3A Gate Charge Test Circuit
3B Gate Charge Waveform
BVDSS
ID(t)
VDS(t)
VDD
IAS
tp
4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
4B Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs.
Drain-Source Breakdown Voltage
300
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
10 20 30 40 50 60 70
0
Drain-Source Breakdown Voltage, BVDSS(V)
0
0
Drain-Source On-State Resistance
Characteristics
20
1.0 1.5
2.0 2.5 3.0
0.5
Gate Threshold Voltage, VTH (V)
Drain Current vs.
Source to Drain Voltage
12
10
Drain Current, ID (A)
16
Drain Current, ID (A)
Drain Current vs.
Gate Threshold Voltage
12
8
4
8
6
4
2
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
0
0
0.4
0.6
0.8
1.0
0.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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