SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) () ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit VGS "20 V Gate-Source Voltage –65a TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH –200 IAR –60 EAR 180 A mJ 250d TC = 25_C (TO-220AB and TO-263) Power Dissipation –39 IDM PD TA = 125_C (TO-263)c 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.6 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case _C/W Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111—Rev. C, 10-Dec-01 www.vishay.com 2-1 SUP/SUB65P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 A –60 VGS(th) VDS = VGS, ID = –250 A –2.0 –3.0 –4.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –60 V, VGS = 0 V –1 VDS = –60 V, VGS = 0 V, TJ = 125_C –50 VDS = –60 V, VGS = 0 V, TJ = 175_C –150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –5 V, VGS = –10 V –120 rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C 0.033 VGS = –10 V, ID = –30 A, TJ = 175_C 0.042 VGS = –10 V, ID = –30 A Drain-Source On-State Resistancea Forward Transconductancea gfs VDS = –15 V, ID = –30 A V nA A 0.017 0.020 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 4500 VGS = 0 V, VDS = –25 V, f = 1 MHz 870 pF 350 85 VDS = –30 V, VGS = –10 V, ID = –65 A 120 24 nC Qgd 22 td(on) 15 40 tr 40 80 65 120 30 60 td(off) VDD = –30 V, RL = 0.47 ID ] –65 A, VGEN = –10 V, RG = 2.5 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is –65 Pulsed Current ISM –200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –65 A, VGS = 0 V trr IRM(REC) Qrr IF = –65 A, di/dt = 100 A/s –1.1 –1.4 V 70 120 ns 7 9 A 0.245 0.54 C Notes: a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing d. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70289 S-05111—Rev. C, 10-Dec-01 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10, 9, 8 V 7V TC = –55_C 160 120 I D – Drain Current (A) I D – Drain Current (A) 160 6V 80 5V 40 25_C 125_C 120 80 40 4V 0 0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) Transconductance 8 10 On-Resistance vs. Drain Current 0.030 0.025 r DS(on)– On-Resistance ( ) TC = –55_C 80 25_C 60 125_C 40 20 0 0.020 VGS = 10 V 0.015 VGS = 20 V 0.010 0.005 0.000 0 20 40 60 80 0 100 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 6000 20 5000 Ciss V GS – Gate-to-Source Voltage (V) C – Capacitance (pF) 6 VGS – Gate-to-Source Voltage (V) 100 g fs – Transconductance (S) 4 4000 3000 2000 Coss Crss 1000 0 VDS = 30 V ID = 65 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70289 S-05111—Rev. C, 10-Dec-01 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on)– On-Resistance ( ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 500 80 10 s Limited by rDS(on) 100 100 s I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (_C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70289 S-05111—Rev. C, 10-Dec-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1