SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) () ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit VGS "20 V Gate-Source Voltage –65a TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH –200 IAR –60 EAR 180 A mJ 250d TC = 25_C (TO-220AB and TO-263) Power Dissipation –39 IDM PD TA = 125_C (TO-263)c 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.6 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case _C/W Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111—Rev. C, 10-Dec-01 www.vishay.com 2-1 SUP/SUB65P06-20 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 A –60 VGS(th) VDS = VGS, ID = –250 A –2.0 –3.0 –4.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –60 V, VGS = 0 V –1 VDS = –60 V, VGS = 0 V, TJ = 125_C –50 VDS = –60 V, VGS = 0 V, TJ = 175_C –150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –5 V, VGS = –10 V –120 rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C 0.033 VGS = –10 V, ID = –30 A, TJ = 175_C 0.042 VGS = –10 V, ID = –30 A Drain-Source On-State Resistancea Forward Transconductancea gfs VDS = –15 V, ID = –30 A V nA A 0.017 0.020 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 4500 VGS = 0 V, VDS = –25 V, f = 1 MHz 870 pF 350 85 VDS = –30 V, VGS = –10 V, ID = –65 A 120 24 nC Qgd 22 td(on) 15 40 tr 40 80 65 120 30 60 td(off) VDD = –30 V, RL = 0.47 ID ] –65 A, VGEN = –10 V, RG = 2.5 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is –65 Pulsed Current ISM –200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –65 A, VGS = 0 V trr IRM(REC) Qrr IF = –65 A, di/dt = 100 A/s –1.1 –1.4 V 70 120 ns 7 9 A 0.245 0.54 C Notes: a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing d. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70289 S-05111—Rev. C, 10-Dec-01 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10, 9, 8 V 7V TC = –55_C 160 120 I D – Drain Current (A) I D – Drain Current (A) 160 6V 80 5V 40 25_C 125_C 120 80 40 4V 0 0 0 2 4 6 8 10 0 2 VDS – Drain-to-Source Voltage (V) Transconductance 8 10 On-Resistance vs. Drain Current 0.030 0.025 r DS(on)– On-Resistance ( ) TC = –55_C 80 25_C 60 125_C 40 20 0 0.020 VGS = 10 V 0.015 VGS = 20 V 0.010 0.005 0.000 0 20 40 60 80 0 100 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 6000 20 5000 Ciss V GS – Gate-to-Source Voltage (V) C – Capacitance (pF) 6 VGS – Gate-to-Source Voltage (V) 100 g fs – Transconductance (S) 4 4000 3000 2000 Coss Crss 1000 0 VDS = 30 V ID = 65 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70289 S-05111—Rev. C, 10-Dec-01 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB65P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on)– On-Resistance ( ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 500 80 10 s Limited by rDS(on) 100 100 s I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (_C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70289 S-05111—Rev. C, 10-Dec-01