Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2305-H
Power MOSFET
4.2A, 20V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT2305-H is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UT2305G-AE2-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
1
S
Pin Assignment
3
2
G
D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R210-013.C
UT2305-H

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
Continuous Drain Current (Note 3) (TA=25°C)
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Power Dissipation (TA=25°C)
PD
0.83
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
θJA
RATING
150
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
BVDSS
VGS=0V, ID=-250μA
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS=±10V, VDS=0V
Reference to 25°C, ID=-1mA
-20
IDSS
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.4
VGS=-4.5V, ID=-2.8A
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-2.5V, ID=-2.4A
VGS=-1.8V, ID=-1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 2)
QG
VDS=-16V, VGS=-4.5V,
Gate-Source Charge
QGS
ID=-4.2A
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-15V, VGS=-10V,
ID=-1A, RG=6Ω, RD=15Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1.2A
Reverse Recovery Time
trr
VGS=0V, IS=-4.2A,
dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
-1
-30
±100
V
μA
μA
nA
V/°C
-0.9
75
95
120
V
mΩ
mΩ
mΩ
-0.1
58
75
95
515
55
20
pF
pF
pF
6.4
0.9
1.6
12
36
326
200
nC
nC
nC
ns
ns
ns
ns
-1.2
27.7
22
V
ns
nC
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QW-R210-013.C
UT2305-H

Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-013.C
UT2305-H

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R210-013.C
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