Application Note, V1.0, 2008 AN2008-01 Technical Information IGBT Modules Definition and use of junction temperature values Industrial Power We Listen to Your Comments Any information within this document that you feel is wrong, Your feedback will help us to continuously improve the Please send your proposal (including a reference to this document) to: unclear or quality of missing at all? this document. [email protected] Autor: Hubert Ludwig IFAG AIM PMD ID TM Edition 2008-01-10 Published by Infineon Technologies AG 59568 Warstein, Germany © Infineon Technologies AG 2008. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. AN2008-1 Definition of junction temperature Definition and use of the junction temperature values (Tvj; Tvjmax, Tvjop) The International Standard IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). Essential ratings and characteristics in the IEC Standards In chapter 5.1 the ratings and limiting values are defined for: ambient or case or virtual junction temperature (Ta or Tc or Tvj), Storage temperature (Tstg), Collector-emitter voltage with gate-emitter short-circuited (VCES), Gate-emitter voltages (VGES), Continuous collector current (IC), Repetitive peak collector current (ICRM), Non-repetitive peak collector current (ICSM), Total power dissipation (Ptot), Maximum safe operating area, Maximum reverse biased safe operating area (RBSOA) and Maxmum short circuit safe operating area (SCSOA). Definition of Tvj The Junction temperature Tvj is the temperature in the junction region of a semiconductor chip. This junction temperature is to determine the thermal resistance junction to case RthJC used for further calculations. Because it does not precisely match the exact junction temperature of one of the chips in a module it is more correctly termed “Virtual junction temperature”. Definition of Tvj max The rated maximum operating junction temperature Tvjmax is used to determine the maximum allowable power dissipation of a continuously turned on IGBT (i.e. static operation). For switching operation (also for the short period of time during turn-off of the IGBT) it has to be ensured that the device safely operates under high dynamic stress, short dynamic temperature transients and operational chipand module temperature inhomogenities. Hence, the maximum calculated virtual junction temperature under dynamic operation is limited to a value lower than Tvjmax. The RBSOA diagram (Reverse Biased Safe Operating Area) in the respective data sheets is showing the area of collector current IC and collector-emitter voltage VCE which the IGBTs will sustain simultaneously for a short period of time during turn-off without being damaged under the specified conditions. Application Note 3 V1.0, 2008-01-08 AN2008-1 Definition of junction temperature Definition of Tvj op (most practical value) The operating temperature Tvjop specifies the limits (minimum and maximum value) of the junction temperature between which the device may be operated. This includes the switching operation and shows identical maximum values as specified in the RBSOA diagram. For applications with switching operation the relevant design limit is therefore the specified operation temperature Tvjop. Calculations of current carrying capability at normal load and overload (also for short time duration) should be done using the average on state, turn-on (Eon) and turn-off (Eoff) losses in regard to stay within the allowed operation temperature range. (Note: One can ignore the peak power losses and the generated transient temperature rise during “turn on” or “turn off”. They are not specified in detail and already considered in the specified temperature Tvjop ) The specified maximum operation temperature Tvjop of Infineon (eupec) IGBT modules is: Tvjop max =125°C • 600V IGBT2 DLC, KL4 series • 1200V IGBT2 DN2, DLC, KF4, KL4C and KS4 series • 1200V IGBT3 KE3 and KT3 series • 1600/1700V IGBT1 DN2 and KF4 series • 1700V IGBT2 DLC and KF6 series • 1700V IGBT3 KE3 series • 3300V IGBT2 KF2C series • 6500V IGBT2 KF2 series Tvjop max =150°C • 600V IGBT3 • 1200V IGBT4 • 1700V IGBT4 • 3300V IGBT3 E3 series P4, E4, T4 series P4, E4 series L3, E3 series Important note: Exceeding the specified limiting values means operation out of the specification. This can lead to a failure and will reduce the life time of the device! Application Note 4 V1.0, 2008-01-08