Photomicrosensor (Reflective) EE-SY310/-SY410 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Incorporates an IC chip with a built-in detector element and amplifier. • Incorporates a detector element with a built-in temperature compensation circuit. • Compact reflective model with a molded housing. • A wide supply voltage range: 4.5 to 16 VDC • Directly connects with C-MOS and TTL. • Dark ON model (EE-SY310) • Light ON model (EE-SY410) • Recommended sensing distance = 5.0 mm Five, 0.5 4.6 +0.2 −0.3 Two. R1.5 Two. R2 Five, 0.3 ■ Absolute Maximum Ratings (Ta = 25°C) Emitter 15 to 18 17 to 24 Reverse voltage IFP V O Output current Detector K G Terminal No. Name A Anode Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 3 mm max. ±0.2 K Cathode 3 < mm ≤ 6 V Power supply (Vcc) 6 < mm ≤ 10 ±0.24 ±0.29 Output (OUT) Ground (GND) 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 O G Symbol Rated value 50 mA IF (see note 1) VR 4V Pulse forward current Power supply voltage Output voltage Internal Circuit A Item Forward current Permissible output dissipation Ambient tempera- Operating ture Storage Soldering temperature VCC 1A (see note 2) 16 V VOUT 28 V IOUT 16 mA POUT 250 mW (see note 1) –40°C to 75°C –40°C to 85°C 260°C (see note 3) Topr Tstg Tsol Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR Condition IF = 20 mA 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 920 nm typ. IF = 20 mA Low-level output voltage VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EE-SY310), with incident light (EE-SY410) (see notes 1 and 2) High-level output voltage VOH 15 V min. Vcc = 16 V, RL = 1 kΩ, with incident light (EE-SY310), without incident light (EE-SY410) (see notes 1 and 2) Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V Peak spectral sensitivity wavelength λP 870 nm typ. VCC = 4.5 to 16 V IFT 6 mA typ., 15 mA max. VCC = 4.5 to 16 V Hysteresis ΔH 17% typ. VCC = 4.5 to 16 V Response frequency f 50 Hz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Response delay time tPLH (tPHL) 3 μs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Response delay time tPHL (tPLH) 20 μs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA Detector LED current when output is OFF LED current when output is ON 174 EE-SY310/-SY410 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 4. The value of the response frequency is measured by rotating the disk as shown below. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm. 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON. 15 mm 5 mm 5. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EE-SY410. Input Input Output Output (tPLH) (tPHL) (tPHL) EE-SY310 (tPLH) EE-SY410 ■ Engineering Data Note: The values in the parentheses apply to the EE-SY410. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Ta = 25°C VCC = 5 V IF = 0 mA (15 mA) VCC = 5 V RL = 330 Ω Ta = 25°C VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) IFT OFF (IFT ON) IFT ON (IFT OFF) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Output current IOUT (mA) Response Delay Time vs. Forward Current (Typical) Response delay time tPHL, tPLH (μs) Current consumption Icc (mA) Ta = 25°C IF = 0 mA (15 mA) LED current IFT (mA) Forward current IF (mA) Low-level Output Voltage vs. Output Current (Typical) Ta = 25°C RL = 1 kΩ Supply voltage VCC (V) Forward voltage VF (V) Ambient temperature Ta (°C) Current Consumption vs. Supply Voltage (Typical) Ta = 70°C Low level output voltage VOL (V) VCC = 5 V RL = 330 Ω Ta = −30°C Ta = 25°C LED Current vs. Supply Voltage (Typical) VCC = 5 V IF = 0 mA (15 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Distance d2 (mm) LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (°C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCC = 5 V Ta = 25°C Sensing object: White paper with a reflection factor of 90% Operate Release Forward current IF (mA) Distance d1 (mm) EE-SY310/-SY410 Photomicrosensor (Reflective) 175