Photomicrosensor (Reflective) EE-SY313/-SY413 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Incorporates an IC chip with a built-in detector element and amplifier. • Incorporates a detector element with a built-in temperature compensation circuit. • Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. • A wide supply voltage range: 4.5 to 16 VDC • Directly connects with C-MOS and TTL. • Dark ON model (EE-SY313) • Light ON model (EE-SY413) • Recommended sensing distance = 4.4 mm Five, 0.5 ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value 50 mA (see note 1) Forward current IF Emitter 15 to 18 17 to 24 Detector Internal Circuit A V O K G Terminal No. Name Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance A Anode 3 mm max. ±0.3 K Cathode 3 < mm ≤ 6 V Power supply (Vcc) 6 < mm ≤ 10 ±0.375 ±0.45 O G Output (OUT) Ground (GND) 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Reverse voltage VR 4V Pulse forward current Power supply voltage Output voltage IFP VCC 1A (see note 2) 16 V VOUT 28 V Output current IOUT 16 mA POUT 250 mW (see note 1) Topr Tstg Tsol –40°C to 65°C –40°C to 85°C 260°C (see note 3) Permissible output dissipation Ambient tem- Operating perature Storage Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Emitter Detector Item Forward voltage Symbol VF Value 1.2 V typ., 1.5 V max. Reverse current IR Condition IF = 20 mA 0.01 μA typ., 10 μA max. VR = 4 V Peak emission waveλP length Low-level output voltage VOL 920 nm typ. IF = 20 mA 0.12 V typ., 0.4 V max. High-level output voltage VOH 15 V min. Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EESY313), with incident light (EE-SY413) (see notes 1 and 2) Vcc = 16 V, RL = 1 kΩ, with incident light (EE-SY313), without incident light (EE-SY413) (see notes 1 and 2) Vcc = 16 V 870 nm typ. VCC = 4.5 to 16 V 10 mA typ., 20 mA max. VCC = 4.5 to 16 V Peak spectral sensitivity λP wavelength LED current when output is OFF IFT LED current when output is ON Hysteresis ΔH 17% typ. VCC = 4.5 to 16 V Response frequency f 50 pps min. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA Response delay time tPLH (tPHL) 3 μs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA Response delay time tPHL (tPLH) 20 μs typ. VCC = 4.5 to 16 V, IF = 20 mA, IOL = 16 mA 168 EE-SY313/-SY413 Photomicrosensor (Reflective) Note: 1. With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 4. The value of the response frequency is measured by rotating the disk as shown below. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm. 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON. 15 mm 15 mm 4.4 mm 5. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EE-SY413. Input Input Output Output (tPLH) (tPHL) (tPHL) EE-SY313 (tPLH) EE-SY413 ■ Engineering Data Note: The values in the parentheses apply to the EE-SY413. IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) LED current IFT (mA) Forward current IF (mA) IFT OFF (IFT ON) IFT ON (IFT OFF) Supply voltage VCC (V) Low-level Output Voltage vs. Output Current (Typical) Low-level Output Voltage vs. Ambient Temperature Characteristics (Typical) Ta = 25°C VCC = 5 V IF = 0 mA (20 mA) Output current IC (mA) Response Delay Time vs. Forward Current (Typical) Response delay time tPHL, tPLH (μs) Current consumption Icc (mA) Ta = 25°C IF = 0 mA (15 mA) Ta = 70°C Ta = 25°C RL = 1 kΩ Forward voltage VF (V) Ambient temperature Ta (°C) Current Consumption vs. Supply Voltage (Typical) Ta = −30°C Ta = 25°C Low level output voltage VOL (V) VCC = 5 V RL = 330 Ω LED Current vs. Supply Voltage (Typical) VCC = 5 V RL = 330 Ω Ta = 25°C VOUT (EE-SY3@@) VOUT (EE-SY4@@) tPHL (tPLH) VCC = 5 V IF = 0 mA (20 mA) IOL = 16 mA IOL = 5 mA Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Distance d2 (mm) LED current IFT (mA) LED Current vs. Ambient Temperature Characteristics (Typical) Forward Current vs. Forward Voltage Characteristics (Typical) Low level output voltage VOL (V) Ambient temperature Ta (°C) Output allowable dissipation PC (mW) Forward current IF (mA) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCC = 5 V Ta = 25°C Sensing object: White paper with a reflection factor of 90% Operate Release tPLH (tPHL) Forward current IF (mA) Distance d1 (mm) EE-SY313/-SY413 Photomicrosensor (Reflective) 169